DTD143EKT146 [ROHM]
NPN 500mA 50V Digital Transistors (Bias Resistor Built-in Transistors); NPN 500毫安50V数字晶体管（偏置电阻内置晶体管）
| 型号： | DTD143EKT146 |
| 厂家： | 
ROHM |
| 描述： | NPN 500mA 50V Digital Transistors (Bias Resistor Built-in Transistors) |
| 文件： | 总6页 (文件大小：328K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DTD143EK
Datasheet
NPN 500mA 50V Digital Transistors (Bias Resistor Built-in Transistors)
lOutline
SMT3
Parameter
Value
50V
VCC
IC(MAX.)
R1
OUT
500mA
4.7kW
4.7kW
IN
GND
R2
DTD143EK
SOT-346 (SC-59)
lFeatures
1) Built-In Biasing Resistors, R1 = R2 = 4.7kW.
2) Built-in bias resistors enable the configuration of
lInner circuit
an inverter circuit without connecting external
input resistors (see inner circuit).
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
4) Only the on/off conditions need to be set for
operation, making the circuit design easy.
5) Complementary PNP Types :DTB143EK
6) Lead Free/RoHS Compliant.
lApplication
Switching circuit, Inverter circuit, Interface circuit,
Driver circuit
lPackaging specifications
Package
size
(mm)
Basic
ordering
unit (pcs)
Taping
code
Reel size Tape width
Part No.
DTD143EK
Package
SMT3
Marking
F23
(mm)
(mm)
2928
T146
180
8
3,000
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© 2012 ROHM Co., Ltd. All rights reserved.
2012.07 - Rev.D
1/5
Data Sheet
DTD143EK
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
VCC
Values
50
Unit
V
Supply voltage
VIN
V
Input voltage
-10 to +30
500
*1
mA
mW
°C
Collector current
IC
*2
200
150
Power dissipation
Junction temperature
Range of storage temperature
PD
Tj
Tstg
°C
-55 to +150
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
VI(off)
VI(on)
VO(on)
II
Conditions
Min.
-
Typ.
Max.
Unit
V
VCC = 5V, IO = 100mA
VO = 0.3V, IO = 20mA
IO / II = 50mA / 2.5mA
VI = 5V
-
-
0.5
-
Input voltage
3.0
-
Output voltage
Input current
0.1
-
0.3
1.8
0.5
-
V
mA
mA
-
-
VCC = 50V, VI = 0V
VO = 5V, IO = 50mA
-
IO(off)
GI
Output current
DC current gain
Input resistance
Resistance ratio
-
-
47
3.29
0.8
-
R1
4.7
1
6.11
1.2
kW
-
R2/R1
-
VCE = 10V, IE = -50mA,
f = 100MHz
*1
Transition frequency
-
200
-
MHz
fT
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2012.07 - Rev.D
2/5
Data Sheet
DTD143EK
lElectrical characteristic curves(Ta = 25°C)
Fig.2 Output current vs. input voltage
Fig.1 Input voltage vs. output current
(ON characteristics)
(OFF characteristics)
OUTPUT CURRENT : IO [mA]
INPUT VOLTAGE : VI(off)[V]
Fig.4 DC current gain vs. output current
Fig.3 Output current vs. output voltage
II= 2.0mA
500
1.8mA
1.6mA
1.4mA
1.2mA
Ta=25ºC
400
300
200
100
1.0mA
0.8mA
0.6mA
0.4mA
0.2mA
0A
0
0
5
10
OUTPUT CURRENT : IO [mA]
OUTPUT VOLTAGE : VO [V]
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© 2012 ROHM Co., Ltd. All rights reserved.
2012.07 - Rev.D
3/5
Data Sheet
DTD143EK
lElectrical characteristic curves(Ta = 25°C)
Fig.5 Output voltage vs. output current
OUTPUT CURRENT : IO [mA]
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© 2012 ROHM Co., Ltd. All rights reserved.
2012.07 - Rev.D
4/5
Data Sheet
DTD143EK
lDimensions (Unit : mm)
D
SMT3
A
c
Q
A3
e
b
x
S A
e
S
b2
Patterm of terminal position areas
MILIMETERS
MIN
1.00
0.00
INCHES
DIM
MAX
1.30
0.10
MIN
-
0
MAX
0.051
0.004
A
A1
A3
b
c
D
0.25
0.95
0.01
0.35
0.09
2.80
1.50
0.50
0.25
3.00
1.80
0.014
0.004
0.11
0.02
0.01
0.118
0.071
E
e
0.059
0.04
HE
L1
Lp
Q
x
2.60
0.30
0.40
0.20
-
3.00
0.60
0.70
0.30
0.10
0.10
0.102
0.012
0.016
0.008
-
0.118
0.024
0.028
0.012
0.004
0.004
y
-
-
MILIMETERS
MAX
2.10
INCHES
0.08
DIM
MIN
MIN
MAX
e1
b2
l1
0.60
0.90
-
-
0.024
0.035
-
Dimension in mm/inches
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© 2012 ROHM Co., Ltd. All rights reserved.
2012.07 - Rev.D
5/5
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© 2012 ROHM Co., Ltd. All rights reserved.
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