BAV74LT1 [LRC]
Monolithic Dual Switching Diode; 单片双开关二极管
| 型号： | BAV74LT1 |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | Monolithic Dual Switching Diode |
| 文件： | 总2页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
MonolithicDualSwitchingDiode
BAV74LT1
3
1
ANODE
3
1
CATHODE
2
2
ANODE
CASE 318–08, STYLE 9
SOT–23 (TO–236AB)
DEVICE MARKING
BAV74LT1 = JA
MAXIMUM RATINGS (EACH DIODE)
Rating
Reverse Voltage
Forward Current
Symbol
V R
Value
50
Unit
Vdc
I F
200
mAdc
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
I FM(surge)
500
mAdc
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board (1)
T A = 25°C
P D
225
mW
Derate above 25°C
1.8
556
300
mW/°C
°C/W
mW
Thermal Resistance, Junction to Ambient
Total Device Dissipation
R θJA
P D
Alumina Substrate, (2) T A = 25°C
Derate above 25°C
2.4
417
mW/°C
°C/W
°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R θJA
T J , T stg
–55 to +150
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) ( EACH DIODE )
Characteristic
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I (BR) = 5.0 µAdc)
Symbol
Min
Max
Unit
V (BR)
I R
50
—
Vdc
Reverse Voltage Leakage Current
(V R = 50 Vdc, T J = 125°C)
(V R = 50Vdc)
µAdc
—
—
100
0.1
Diode Capacitance
C D
V F
—
2.0
pF
(V R = 0, f = 1.0 MHz)
Forward Voltage
Vdc
(I F = 100 mAdc)
—
—
1.0
4.0
Reverse Recovery Time
t rr
ns
(I F=IR=10mAdc, IR(REC)=1.0mAdc, measured at IR= 1.0 mA, RL=100Ω)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
G6–1/2
LESHAN RADIO COMPANY, LTD.
BAV74LT1
Curves Applicable to Each Anode
10
1.0
100
10
T A = 150°C
T A = 125°C
T A = 85°C
T A = – 40°C
T A = 85°C
T A = 55°C
0.1
1.0
0.1
T A = 25°C
0.01
0.001
T A = 25°C
20
0.2
0.4
0.6
0.8
1.0
1.2
0
10
30
40
50
V F , FORWARD VOLTAGE (VOLTS)
V R , REVERSE VOLTAGE (VOLTS)
Figure 1. Forward Voltage
Figure 3. Leakage Current
1.0
0.9
0.8
0.7
0.6
0
2
4
6
8
V R , REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
G6–2/2
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