S1004VS2 [LITTELFUSE]
Silicon Controlled Rectifier, 4A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-251AA, VPAK-3;型号: | S1004VS2 |
厂家: | LITTELFUSE |
描述: | Silicon Controlled Rectifier, 4A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-251AA, VPAK-3 栅 栅极 |
文件: | 总6页 (文件大小:394K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
D-PAK
V-PAK
TO-252AA
TO-251AA
A
K
G
D-PAK Sensitive SCRs
(4 – 10 Amps)
G11eneral Description
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Features
•
•
Surface mount package TO-252AA and through
hole TO-251AA
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Glass-passivated junctions ensure long device
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reliability and parameter stability
•
•
•
Sensitive gate input
Voltage capability — up to 600 Volts
Surge capability — up to 100 Amps
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2001 Teccor Electronics
http://www.teccor.com
- 1
+1 972-580-7777
Thyristor Product Catalog
Electrical Specifications
VDRM &
VRRM
Part No.
IT
IGT
IDRM & RRM
I
VTM
Peak
VGT
Surface Mount
Through Hole
Maximum
On-State
Current
(9)
Peak Off-State
Current
DC Gate
Repetitive
DC Gate
Trigger Voltage
Peak
Trigger
On-State
Voltage at
Max Rat-
ed RMS
Current
Gate Open
VD = 6VDC
Off-State
Forward&
Reverse
Voltage
Current
V
DRM = Max
R
L = 100Ω
V
D = 6VDC
Rated Value
(2)
(4)
R
L = 100Ω
(5)
TYPE
T
C = 25°C
Amps
mAmps
Volts
TO-252AA
D-PAK
TO-251AA
V-PAK
TC
=
TC
=
TC
=
T
=
TC =
C
I
I
Volts
MIN
100
100
200
200
400
400
600
600
100
100
200
200
400
400
600
600
100
100
200
200
400
400
600
600
100
100
200
200
400
400
600
600
µAmps
MAX
50
200
50
200
50
200
50
25°C
MAX
.002
.002
.002
.002
.002
.002
.002
.002
.005
.005
.005
.005
.005
.005
.005
.005
.005
.005
.005
.005
.005
.005
.005
.005
.005
.005
.005
.005
.005
.005
.005
.005
110°C
MAX
0.10
0.10
0.10
0.10
0.10
0.10
0.10
0.10
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Volts
MAX
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
40°C
MAX
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
25°C
MAX
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
110°C
MIN
0.2
T(RMS) T(AV)
Non Isolated
S1004DS1
S1004DS2
S2004DS1
S2004DS2
S4004DS1
S4004DS2
S6004DS1
S6004DS2
S1006DS2
S1006DS3
S2006DS2
S2006DS3
S4006DS2
S4006DS3
S6006DS2
S6006DS3
S1008DS2
S1008DS3
S2008DS2
S2008DS3
S4008DS2
S4008DS3
S6008DS2
S6008DS3
S1010DS2
S1010DS3
S2010DS2
S2010DS3
S4010DS2
S4010DS3
S6010DS2
S6010DS3
Non Isolated
S1004VS1
S1004VS2
S2004VS1
S2004VS2
S4004VS1
S4004VS2
S6004VS1
S6004VS2
S1006VS2
S1006VS3
S2006VS2
S2006VS3
S4006VS2
S4006VS3
S6006VS2
S6006VS3
S1008VS2
S1008VS3
S2008VS2
S2008VS3
S4008VS2
S4008VS3
S6008VS2
S6008VS3
S1010VS2
S1010VS3
S2010VS2
S2010VS3
S4010VS2
S4010VS3
S6010VS2
S6010VS3
4.0
4.0
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
5.1
5.1
5.1
5.1
5.1
5.1
5.1
5.1
6.4
6.4
6.4
6.4
6.4
6.4
6.4
6.4
0.2
4.0
0.2
4.0
0.2
4 Amps
6 Amps
8 Amps
4.0
0.2
4.0
0.2
4.0
0.2
4.0
200
200
500
200
500
200
500
200
500
200
500
200
500
200
500
200
500
200
500
200
500
200
500
200
500
0.2
6.0
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
6.0
6.0
6.0
6.0
6.0
6.0
6.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10
Amps
http://www.teccor.com
- 2
2001 Teccor Electronics
+1972-580-7777
Thyristor Product Catalog
IH
IGM
VGRM
PGM
PG(AV)
ITSM
tgt
tq
dv/dt
di/dt
I2t
Holding
Current
Peak
Gate
Current
(1)
Peak
Reverse
Gate
Peak
Gate
Average
Gate
Peak
One
Maximum
Rate-of-
Gate
Controlled
Turn-OnTime
Gate
Circuit
Commulated
Turn-Off
Time
RMS Surge
(Non-
Critical Rate-of-
Applied Voltage
Gate Open
Initial on State
Current =
20mA
Power
Dissipa-
tion
Power
Dissipa-
tion
Cycle
Surge
(3)(7)(9)
Change of
On-State
Current
Repetitive)
On-State
Current
Voltage
Pulse=10mA
Min.
(8)
(1)
I
GT = 150mA
With 0.1µs
Rise Time
for Period of
8.3ms
(6)
Width=15µs
≤ 0.1µs
for Fusing
Rise Time
Amps
Volts/µSec
TC
=
mAmps
MAX
4.0
6.0
4.0
6.0
4.0
6.0
4.0
6.0
6.0
8.0
6.0
8.0
6.0
8.0
6.0
8.0
6.0
8.0
6.0
8.0
6.0
8.0
6.0
8.0
6.0
8.0
6.0
8.0
6.0
8.0
6.0
8.0
Amps
Volts
MIN
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
Watts
Watts
60Hz
50Hz
110°C
TYP
8
Amps/µSec
µSec
TYP
3.0
4.0
3.0
4.0
3.0
4.0
3.0
4.0
4.0
5.0
4.0
5.0
4.0
5.0
4.0
5.0
4.0
5.0
4.0
5.0
4.0
5.0
4.0
5.0
4.0
5.0
4.0
5.0
4.0
5.0
4.0
5.0
µSec
MAX
50
50
50
50
50
50
50
50
50
45
50
45
50
45
50
45
50
45
50
45
50
45
50
45
50
45
50
45
50
45
50
45
Amps2Sec
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
30
25
25
25
25
25
25
25
25
83
83
83
83
83
83
83
83
83
83
83
83
83
83
83
83
83
83
83
83
83
83
83
83
50
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
30
8
50
30
8
50
30
8
50
30
8
50
30
8
50
30
8
50
30
8
50
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
10
10
10
10
8
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
8
8
8
10
10
10
10
8
8
8
8
10
10
10
10
8
8
8
8
mum, V
= Rated. Rate-of-rise reapplied forward blocking volt-
Electrical Specification Notes
DRM
age = 5V/µs. Gate Bias = 0V, 100Ω (during turn-off time interval)
(9) See Figure 1.3 and 1.4 for current rating at specified operating
case temperature.
(1) Pulse width ≤ 10µs.
(2)
T = T for test conditions in off-state.
C J
(3) For more than one full cycle rating, see Figure 1.2
(4) See Figure 1.1 for V vs T
GT
C
General Notes
(5) See Figure 1.6 for I vs T
GT
C
•
All measurements are made at 60Hz with a resistive load at an
(6) See Figure 1.5 for I vs T
H
C
ambient temperature of +25°C unless otherwise specified.
(7) 4.0A devices also have a pulse peak forward current on-state rat-
ing (repetitive) of 75A. This rating applies for operation at 60Hz,
75°C maximum tab (or anode) lead temperature, switching from
80V peak, sinusoidal current pulse width of 10µs minimum, 15µs
maximum.
•
•
•
Operating temperature range (T ) is -40°C to +110°C
J
Storage temperature range (T ) is -65°C to +150°C
S
Lead solder temperature is a maximum of 230°C for 10 seconds
maximum; 1/16" (1.59mm) from case.
•
The case temperature (T ) is measured as shown on dimensional
(8) Test conditions as follows:
C
outline drawings. See mechanical specifications on page 6 of this
data sheet.
T
≤ 80°C, rectangular current waveform; rate-of-rise of current
C
≤ 10A/µs. Rate-of-reversal of current ≤ 5A/µs. I = 1A (50µs
TM
pulse) Repetition Rate = 60pps. V
= Rated. V = 15V mini-
R
RRM
2001 Teccor Electronics
http://www.teccor.com
- 3
+1 972-580-7777
Thyristor Product Catalog
1.5
1.0
.5
130
120
110
100
90
8 AM
P
80
70
60
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180º
CASE TEMPERATURE: Measure as
shown on dimensional drawings
0
-40
-15
+25
+65
+105+125
Case Temperature (T ) - ˚C
C
50
Figure 1.1
Normalized DC Gate-Trigger Voltage vs Case Temperature
4
6
8
2
0
Average On-State Current [I
] - Amps
T(AV)
100
80
10 AMP DEVICES
Figure 1.4
Maximum Allowable Case Temperatrue vs Average On-
State Current
60
50
40
30
8 AMP DEVICES
6 AMP DEVICES
4 A
20
M
P
D
E
V
IC
ES
4.0
3.0
2.0
1.0
0
See General Notes for specific
operating temperature range.
10
8
6
5
GATE CONTROL MAY BE LOST
DURING AND IMMEDIATELY
FOLLOWING SURGE CURRENT
INTERVAL.
OVERLOAD MAY NOT BE REPEATED
UNTIL JUNCTION TEMPERATURE
HAS RETURNED TO STEADY-STATE
RATED VALUE.
4
SUPPLY FREQUENCY: 60 Hz Sinusoidal
LOAD: Resistive
3
RMS ON-STATE CURRENT: [I
]: Max-
T(RMS)
Rated Value at Specified Case Temperature
2
1
1
2
3
4
5
6 7 8 10
20 30 40 60 80 100
200 300 400 600
1000
Surge Current Duration - Full Cycles
-65
-40
-15
+25
+65
+110 +125
Figure 1.2
Peak Surge Current vs Surge Current Duration
Case Temperature (T ) - ˚C
C
Figure 1.5
Normalized DC Holding Current vs Case Temperature
130
120
110
100
9.0
8.0
See General Notes for specific device
operating temperature range.
7.0
6.0
90
80
70
60
5.0
4.0
3.0
2.0
1.0
0
4 AMP
10 A
M
6 AMP
8 AMP
P
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180º
CASE TEMPERATURE: Measure as
shown on dimensional drawings
50
0
2
4
6
8
10
12
-65
-40
-15
+25
+65
+110 +125
Case Temperature (T ) - ˚C
RMS On-State Current [I
] - Amps
C
T(RMS)
Figure 1.3
Maximum Allowable Case Temperatrue vs RMS On-State
Current
Figure 1.6
Normalized DC Gate - Trigger Current vs Case
Temperature
http://www.teccor.com
- 4
2001 Teccor Electronics
+1972-580-7777
Thyristor Product Catalog
Mechanical Specifications
TO-252AA D-PAK Surface Mount
TO-251AA V-PAK Through Hole
INCHES
MILLIMETERS
INCHES
MILLIMETERS
DIM
A
B
C
D
E
MIN
MAX
MIN
MAX
DIM
A
B
C
D
E
MIN
MAX
MIN
MAX
.236
.244
6.00
6.20
.040
.050
1.02
6.00
8.89
5.21
6.38
0.69
2.21
2.18
0.46
0.91
0.46
1.27
.379
.176
.035
.087
.027
.205
.251
.040
.086
.026
.018
.170
.002
.018
.409
.184
.050
.093
.033
.213
.261
.050
.094
.036
.023
.180
.010
.023
9.63
4.47
0.89
2.21
0.69
5.21
6.38
1.02
2.18
0.66
0.46
4.32
0.05
0.46
10.39
4.67
1.27
2.36
0.84
5.41
6.63
1.27
2.39
0.91
0.58
4.57
0.25
0.58
.236
.350
.205
.251
.027
.087
.086
.018
.036
.018
.244
.375
.213
.261
.033
.093
.094
.023
.042
.023
6.20
9.53
5.41
6.63
0.84
2.36
2.39
0.58
1.07
0.58
F
F
G
H
J
G
H
J
K
L
K
L
M
N
O
P
2001 Teccor Electronics
http://www.teccor.com
- 5
+1 972-580-7777
Thyristor Product Catalog
http://www.teccor.com
- 6
2001 Teccor Electronics
+1972-580-7777
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