S10053 [HAMAMATSU]
Light modulation photo IC; 调光IC图片
| 型号： | S10053 |
| 厂家： | 
HAMAMATSU CORPORATION |
| 描述： | Light modulation photo IC |
| 文件： | 总4页 (文件大小：127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
P H O T O I C
Light modulation photo IC
,
,
,
,
,
S4282-51 S6809 S6846 S6986 S7136/-10 S10053
Fewer detection errors even under disturbance background light
These light modulation photo ICs were developed for optical synchronous detection under disturbance background light. A photodiode,
preamplifier, comparator, oscillator, LED driver and signal processing circuit, etc. are all integrated on a monolithic photo IC chip. Optical
synchronous type photoreflectors and photointerrupters, which less susceptible to disturbance background light, can be easily configured by just
connecting an external LED to this photo IC. Our unique circuit design achieves an allowable background light level of 10000 lx Typ. (S4282-51,
S6986, S10053) and a minimum detection level of 0.2 µW/mm2 Typ. (S6809, S6846, S7136/-10).
Features
Applications
Large allowable background light level
S4282-51, S6986, S10053: 10000 lx Typ.
S6809, S6846, S7136/-10 : 3000 lx Typ.
Minimum detection level
Paper detection in office machine (copiers, fax machines, etc.)
Optical switch
S4282-51, S6986, S10053: 0.7 µW/mm2 Typ.
S6809, S6846, S7136/-10 : 0.2 µW/mm2 Typ.
Digital output (Output appears “L” by light input.)
Small hysteresis (S6809)
Small SMD package (S10053)
ꢀ Absolute maximum ratings (Ta=25 °C)
Parameter
Supply voltage
Output voltage
Symbol
Vcc
Vo
S4282-51, S6986, S10053
S6809, S6846, S7136/-10
Unit
V
V
mA
V
mA
mW
°C
°C
-0.5 to +16
-0.5 to +16
50
Output current
Io
Cathode output voltage
Cathode output current
Power dissipation *1
Operating temperature
Storage temperature
Vcath
Icath
P
Topr
Tstg
-0.5 to +16
70
250
-25 to +60
-40 to +100
*1: Derate power dissipation at a rate of 3.3 mW/°C above Ta=25 °C
ꢀ Spectral response (typical example)
S4282-51, S6986, S10053
S6809, S6846, S7136/-10
(Ta=25 ˚C)
(Ta=25 ˚C)
100
80
60
40
20
0
100
80
60
40
20
0
400
600
800
1000
1200
400
600
800
1000
1200
WAVELENGTH (nm)
WAVELENGTH (nm)
KPICB0001EB
KPICB0002EA
Light modulation photo IC S4282-51, S6809, S6846, S6986, S7136/-10, S10053
ꢀ Electrical and optical characteristics (Ta=25 °C, Vcc=5 V)
S4282-51, S6986, S10053
Output: built-in pull-up resistor *2 Output: open collector *3
Cathode: constant current drive Cathode: open collector drive
S6809, S6846, S7136 /-10
Parameter
Symbol
Condition
Unit
Min.
4.5
Typ.
-
Max.
16
Min.
4.5
Typ.
-
Max.
16
Supply voltage
Current
consumption
Low level
Vcc
Icc
V
Vo, LED
terminals open
-
4
11
-
-
4
11
mA
OL
V
OL
I =16 mA
-
0.2
-
0.4
-
0.2
0.4
V
V
V
output voltage
High level
output
voltage
Low level
output voltage
Low level
output current
4.9
VOH
4.7 k
Ω
between
4.9
-
-
-
-
Vcc and Vo
Vcath Icath=40 mA
Icath Vcath=1.2 V
0.8
V
15
35
60
mA
Pulse cycle
Pulse width
Tp
Tw
65
4
130
8
220
13.7
65
4
130
8
220
13.7
µs
µs
H→L
Threshold
light level
λ=940 nm
No background light
HL
E
µW/mm2
-
0.7
2
-
0.2
1.0
0.45
0.65
(S6809)
0.65
0.8
(S6809)
0.95
0.95
(S6809)
Hysteresis
-
f
0.45
0.5
0.65
1.25
0.95
-
-
Frequency
response
0.5
1.25
-
-
kHz
2
Signal light:
5
W
/ m
m
µ
Allowable
background
light level
λp=940 nm
Background light:
“A” light source
Ex
5000
10000
-
2000
3000
lx
*2:
*3:
Cathode
Output
Cathode
Output
Vcc
Vcc
Vcc
Vcc
10 k
CATHODE
(LED)
CATHODE
(LED)
Vout
Vout
GND
GND
GND
GND
KPICC0009EA
KPICC0010EA
ꢀꢀBlock diagram and internal functions
(a) Oscillator and timing signal generator
The oscillator produces a reference oscillation output by charging and discharging the
built-in capacitor with constant current. The oscillation output is fed to the timing signal
generator, which then creates LED drive pulses and various timing pulses for digital
signal processing.
CONSTANT
Vcc
VOLTAGE
(b) LED driver circuit
BUFFER
This circuit drives an external LED using the LED drive pulses created by the timing
signal generator. The duty cycle is 1/16.
COMPARATOR
PD
(c) Photodiode and preamplifier circuit
PREAMP
The photodiode is formed on the same monolithic chip. A photocurrent generated in the
photodiode is converted to a voltage by a preamplifier circuit. The preamplifier circuit
uses an AC amplifier to expand the dynamic range versus DC or low-frequency
background light, without impairing signal detection sensitivity.
Vref
SIGNAL
PROCESSING
CIRCUIT
(d) Capacitive coupling, buffer amplifier and reference voltage generator
Capacitive coupling removes low-frequency noise and also cancels the DC offset in
the preamplifier. The buffer amplifier boosts the signal up to the comparator level, and
the reference voltage generator produces a comparator level voltage.
Vout
OUTPUT
CIRCUIT
(e) Comparator circuit
TIMING
GENERATOR
OSCILLATOR
CATHODE
(LED)
The comparator circuit has a hysteresis function to prevent chattering caused by
small fluctuations in the input light.
LED
DRIVER
(f) Signal processing circuit
GND
The signal processing circuit consists of a gate circuit and digital integrator circuit. The
gate circuit discriminates input pulses during synchronous detection, to prevent op-
erational errors caused by asynchronous background light. Background light which is
synchronized with the signal detection timing cannot be eliminated by the gate circuit,
but is canceled out by the digital integrator circuit at the latter stage.
TRUTH TABLE
OUTPUT LEVEL
INPUT
LIGHT ON
LOW
HIGH
(g) Output circuit
LIGHT OFF
This circuit serves as an output buffer for the signal processing circuit and outputs the
signal to an external circuit.
KPICC0002EA
Light modulation photo IC S4282-51, S6809, S6846, S6986, S7136/-10, S10053
ꢀꢀDimensional outlines (unit: mm)
S6809, S6846, S6986
5.2 ± 0.3
(INCLUDING BURR)
5.0
2.0
1.0
CENTER OF
ACTIVE AREA
2.5 ± 0.2
2.0
(DEPTH 0.15 MAX.)
1.0
(DEPTH 0.15 MAX.)
0.55
0.45
0.25+-00..115
1.27 1.271.27
(SPECIFIED AT THE LEAD ROOT)
PHOTOSENSITIVE
SURFACE
10˚
Vout
GND
CATHODE (LED)
Vcc
Tolerance unless otherwise
noted: ±0.1, ±2˚
5˚
Shaded area indicates burr.
Values in parentheses are not
guaranteed, but for reference.
KPICA0008EC
S4282-51, S7136
4.6 ± 0.2
(INCLUDING BURR)
3.1 ± 0.4
4.5 *
CENTER OF
ACTIVE AREA
1.0
PHOTOSENSITIVE
SURFACE
2.0
5.75 ± 0.2
5˚
CATHODE (LED)
Vcc
Vout
GND (SHORT LEAD)
Tolerance unless otherwise
noted: ±0.1, ±2˚
Shaded area indicates burr.
3˚
4.5 *
7.5 ± 5˚
Chip position accuracy
with respect to the package
dimensions marked *
X≤±0.2
2.0
(DEPTH 0.15 MAX.)
KPICA0009EB
Y≤±0.2
Light modulation photo IC S4282-51, S6809, S6846, S6986, S7136/-10, S10053
S7136-10
CENTER OF
ACTIVE AREA
INDEX MARK
4.6 ± 0.2
(INCLUDING BURR)
0.7 ± 0.15
1.0
1.5 ± 0.4
0.7 ± 0.3
4.5 *
1.5 ± 0.4
0.7 ± 0.3
7.5 ± 0.3
2.0
PHOTOSENSITIVE
SURFACE
5˚
CATHODE (LED)
Vcc
Vout
GND
Tolerance unless otherwise noted: ±0.1, ±2˚
Shaded area indicates burr.
Chip position accuracy
with respect to package
dimensions marked *
X≤±0.2
3˚
KPICA0034EB
Y≤±0.2
S10053
4.1 Max.
(INCLUDING BURR)
CENTER OF
ACTIVE AREA
1.0 ± 0.4
1.0 ± 0.4
0.05
0.5
5.0 ± 0.3 *
2.8
0.75
0.45 ± 0.3
0.45 ± 0.3
1.3
PHOTOSENSITIVE
SURFACE
2.4
MIRROR AREA RANGE
Vout
(GND)
(GND)
(GND)
(GND) terminals should be connected to
GND terminal on board.
Tolerance unless otherwise
noted: ±0.1
GND
CATHODE (LED)
(GND)
Shaded area indicates burr.
Chip position accuracy
with respect to the package
dimensions marked *
2.9
(GND) (SHORT LEAD)
(GND)
Vcc
X≤±0.2
Y≤±0.2
3.0 *
KPICA0076EB
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KPIC1002E06
Jul. 2007 DN
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