P0367WC12F [LITTELFUSE]
Silicon Controlled Rectifier, 740A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AB, 3 PIN;
| 型号： | P0367WC12F |
| 厂家： | 
LITTELFUSE |
| 描述： | Silicon Controlled Rectifier, 740A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AB, 3 PIN 栅 栅极 |
| 文件： | 总12页 (文件大小：1608K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Date:- 02 August 2012
Data Sheet Issue:- K1
Fast Turn-off Thyristor
Type P0367WC12#
Absolute Maximum Ratings
MAXIMUM
LIMITS
1200
VOLTAGE RATINGS
UNITS
VDRM
VDSM
VRRM
VRSM
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
V
V
V
V
1200
1200
1300
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
367
OTHER RATINGS
UNITS
IT(AV)
IT(AV)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
Mean on-state current, Tsink=55°C, (note 2)
Mean on-state current. Tsink=85°C, (note 2)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, VRM≤10V, (note 5)
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, VRM≤10V, (note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak forward gate voltage
A
A
140
740
A
610
A
3600
3960
64.8×103
78.4×103
500
A
A
A2s
A2s
A/µs
A/µs
V
I2t
(di/dt)cr
1000
12
VFGM
IFGM
VRGM
PG(AV)
PGM
VGD
Peak forward gate current
18
A
Peak reverse gate voltage
5
V
Mean forward gate power
1.5
W
W
V
Peak forward gate power (100µs pulse width)
Non-trigger gate voltage, (Note 7)
60
0.25
THS
Operating temperature range
-40 to +125
-40 to +150
°C
°C
Tstg
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=80% VDRM, IFG=1A, tr≤1µs, Tcase=125°C.
7) Rated VDRM
.
Data Sheet. Type P0367WC12# Issue K1
Page 1 of 12
August 2012
Fast turn-off thyristor type P0367WC12#
Characteristics
PARAMETER
MIN.
TYP. MAX. TEST CONDITIONS (Note 1)
UNITS
VTM
VT0
rT
Maximum peak on-state voltage
Threshold voltage
-
-
-
1.83 ITM=715A
V
V
-
1.17
0.92
Slope resistance
-
-
mΩ
V/µs
mA
mA
V
(dv/dt)cr Critical rate of rise of off-state voltage
200
-
-
VD=80% VDRM
IDRM
IRRM
VGT
IGT
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Holding current
-
-
-
-
-
-
-
-
30
30
3.0
Rated VDRM
Rated VRRM
Tj=25°C
-
-
-
200 Tj=25°C
VD=6V, IT=1A
mA
mA
µC
µC
IH
-
600 Tj=25°C
-
Qrr
Recovered charge
-
ITM=300A, tp=500µs, di/dt=20A/µs, Vr=50V
Qra
Recovered charge, 50% Chord
50
-
ITM=300A, tp=500µs, di/dt=20A/µs, Vr=50V,
Vdr=80%VDRM, dVdr/dt=20V/µs
ITM=300A, tp=500µs, di/dt=50A/µs, Vr=50V,
Vdr=80%VDRM, dVdr/dt=200V/µs
30
25
-
-
40
tq
Turn-off time (note 2)
µs
30
-
-
-
-
0.095 Double side cooled
K/W
K/W
kN
RthJK
Thermal resistance, junction to heatsink
0.190 Single side cooled
F
Mounting force
Weight
3.3
-
-
5.5
-
Wt
70
g
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘#’ in the device part number. See ordering information for
details of tq codes.
Data Sheet. Type P0367WC12# Issue K1
Page 2 of 12
August 2012
Fast turn-off thyristor type P0367WC12#
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
VDRM VDSM VRRM
VRSM
V
1300
VD VR
DC V
810
Voltage Grade
12
V
1200
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
8.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
9.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
(tq) and for the off-state voltage to reach full value (tv), i.e.
1
f max =
tpulse +tq +tv
Data Sheet. Type P0367WC12# Issue K1
Page 3 of 12
August 2012
Fast turn-off thyristor type P0367WC12#
10.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Let Ep be the Energy per pulse for a given current and pulse width, in joules
Let Rth(J-Hs) be the steady-state d.c. thermal resistance (junction to sink)
and TSINK be the heat sink temperature.
Then the average dissipation will be:
WAV = EP ⋅ f and TSINK (max.) =125 −
WAV ⋅ Rth
(
J −Hs
)
11.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1 below.
Fig. 1
(ii) Qrr is based on a 100µs integration time.
100µs
Qrr = irr .dt
i.e.
∫
0
t1
K Factor =
(iii)
t2
12.0 Reverse Recovery Loss
12.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from:
TSINK (new) = TSINK (original ) − E ⋅
k + f ⋅ Rth
(
J −Hs
)
where k = 0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
R
th(J-Hs) = d.c. thermal resistance (°C/W).
Data Sheet. Type P0367WC12# Issue K1
Page 4 of 12
August 2012
Fast turn-off thyristor type P0367WC12#
The total dissipation is now given by:
W(TOT) = W(original) + E ⋅ f
12.2 Determination without Measurement
In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz
TSINK
= TSINK
−
)
E ⋅ Rth ⋅ f
)
(
new
)
(
original
Where TSINK (new) is the required maximum heat sink temperature and
TSINK (original) is the heat sink temperature given with the frequency ratings.
A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.
12.3 Reverse Recovery Loss by Measurement
This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring
the charge care must be taken to ensure that:
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:
Vr
di
CS ⋅
dt
R2 = 4⋅
Where: Vr = Commutating source voltage
CS = Snubber capacitance
R
= Snubber resistance
13.0 Gate Drive
The recommended pulse gate drive is 20V, 20Ω with a short-circuit current rise time of not more than
1µs. This gate drive must be applied when using the full di/dt capability of the device.
The duration of pulse may need to be configured with respect to the application but should be no shorter
than 20µs, otherwise an increase in pulse current could be needed to supply the resulting increase in
charge to trigger.
Data Sheet. Type P0367WC12# Issue K1
Page 5 of 12
August 2012
Fast turn-off thyristor type P0367WC12#
Curves
Figure 1 - On-state characteristics of Limit device
Figure 2 - Transient thermal impedance
Data Sheet. Type P0367WC12# Issue K1
Page 6 of 12
August 2012
Fast turn-off thyristor type P0367WC12#
Figure 3 - Gate characteristics at 25°C junction temperature
Figure 4 - Gate trigger characteristic
Trigger point of all thyristors lie within the areas shown.
Gate drive load line must lie outside appropriate IG/VG rectangle
Data Sheet. Type P0367WC12# Issue K1
Page 7 of 12
August 2012
Fast turn-off thyristor type P0367WC12#
Figure 6 - Sine wave frequency ratings
Figure 5 – Typical recovered charge
Figure 7 - Sine wave frequency ratings
Figure 8 - Sine wave energy per pulse
Data Sheet. Type P0367WC12# Issue K1
Page 8 of 12
August 2012
Fast turn-off thyristor type P0367WC12#
Figure 9 - Square wave frequency ratings
Figure 10 - Square wave frequency ratings
Figure 11 - Square wave frequency ratings
Figure 12 - Square wave frequency ratings
Data Sheet. Type P0367WC12# Issue K1
Page 9 of 12
August 2012
Fast turn-off thyristor type P0367WC12#
Figure 13 - Square wave energy per pulse
Figure 14 - Square wave energy per pulse
Figure 15 – Maximum reverse recovery energy loss per pulse at Tj = 125°C and Vrrm = 804 volts
Data Sheet. Type P0367WC12# Issue K1
Page 10 of 12
August 2012
Fast turn-off thyristor type P0367WC12#
Figure 16 - Maximum surge and I2t Ratings
Data Sheet. Type P0367WC12# Issue K1
Page 11 of 12
August 2012
Fast turn-off thyristor type P0367WC12#
Outline Drawing & Ordering Information
ORDERING INFORMATION
(Please quote 10 digit code as below)
P0367
Fixed
WC
Fixed
#
♦ ♦
Off-state Voltage Code
tq Code
Type Code
Outline Code
VDRM/100
12
E=25µs, F=30µs
Typical order code: P0367WC12E – 1200V VDRM, 25µs tq
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The information contained herein is confidential and is protected by Copyright. The information may not be used or
disclosed except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd.
© IXYS UK Westcode Ltd.
In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time
without prior notice.
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject
to the conditions and limits contained in this report.
Data Sheet. Type P0367WC12# Issue K1
Page 12 of 12
August 2012
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