MAC9MG [LITTELFUSE]

TRIAC, 600V V(DRM), 8A I(T)RMS, TO-220AB, CASE 221A-09, 3 PIN;
MAC9MG
型号: MAC9MG
厂家: LITTELFUSE    LITTELFUSE
描述:

TRIAC, 600V V(DRM), 8A I(T)RMS, TO-220AB, CASE 221A-09, 3 PIN

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Thyristors  
Surface Mount – 400V - 800V > MAC9DG, MAC9MG, MAC9NG  
Pb  
MAC9DG, MAC9MG, MAC9NG  
Description  
Designed primarily for full-wave ac control applications,  
such as motor controls, heating controls and power  
supplies; or wherever half−wave silicon gate−controlled,  
solid−state devices are needed.  
Features  
• Blocking Voltage to 800 Volts  
• On−State Current Rating of 8.0 Amperes RMS at 100°C  
• Uniform GateTrigger Currents inThree Quadrants  
• High Immunity to dv/dt − 500 V/µs minimum at 125°C  
• Minimizes Snubber Networks for Protection  
• Industry StandardTO−220 Package  
• High Commutating di/dt − 6.5 A/ms minimum at 125°C  
• These Devices are Pb−Free and are RoHS Compliant  
Pin Out  
Functional Diagram  
MT2  
MT1  
G
CASE 221A  
STYLE 4  
1
Additional Information  
2
Samples  
Datasheet  
Resources  
© 2017 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: 08/30/17  
Thyristors  
Surface Mount – 400V - 800V > MAC9DG, MAC9MG, MAC9NG  
Maximum Ratings (TJ = 25°C unless otherwise noted)  
Rating  
Symbol  
Value  
Unit  
V
Peak Repetitive Off-State Voltage (Note 1)  
(Gate Open, Sine Wave 50 to 60 Hz, TJ = 25° to 100°C)  
VDRM  
,
MAC9SD  
MAC9M  
MAC9N  
400  
600  
800  
VRRM  
On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 100°C)  
IT  
8.0  
80  
A
A
(RMS)  
Peak Non-Repetitive Surge Current  
(One Full Cycle Sine Wave, 60 Hz, TJ = 125°C)  
ITSM  
Circuit Fusing Consideration (t = 8.3 ms)  
I2t  
26  
16  
A²sec  
W
Peak Gate Power  
(Pulse Width 1.0 µs, TC = 80°C)  
PGM  
Average Gate Power (t = 8.3 ms, TC = 80°C)  
Operating JunctionTemperature Range  
StorageTemperature Range  
PG (AV)  
0.35  
W
°C  
°C  
TJ  
-40 to +125  
-40 to +150  
Tstg  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.  
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.  
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative  
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.  
Thermal Characteristics  
Rating  
Symbol  
Value  
Unit  
R8JC  
Thermal Resistance,  
Junction−to−Case (AC)  
2.2  
°C/W  
Junction−to−Ambient  
62.5  
R8JA  
TL  
Maximum LeadTemperature for Soldering Purposes, 1/8” from case for  
10 seconds  
260  
°C  
© 2017 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: 08/30/17  
Thyristors  
Surface Mount – 400V - 800V > MAC9DG, MAC9MG, MAC9NG  
Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted ; Electricals apply in both directions)  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Peak Repetitive Blocking Current  
(VD = VDRM = VRRM; Gate Open)  
-
-
0.01  
TJ = 25°C  
IDRM  
,
mA  
IRRM  
-
-
2.0  
TJ = 125°C  
Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in both directions)  
Characteristic  
11 A)  
Symbol  
Min  
Typ  
Max  
Unit  
Peak On−State Voltage (Note 2) (ITM  
=
VTM  
1.2  
1.6  
50  
50  
5.0  
50  
50  
80  
50  
1.5  
1.5  
V
MT2(+), G(+)  
MT2(+), G(−)  
MT2(−), G(−)  
10  
10  
10  
16  
18  
GateTrigger Current  
(Continuous dc)  
IGT  
mA  
mA  
mA  
(VD = 12 V, RL = 100 Ω)  
22  
IH  
30  
Holding Current (VD = 12 V, Gate Open, Initiating Current = 150 mA))  
MT2(+), G(+)  
MT2(+), G(−)  
MT2(−), G(−)  
MT2(+), G(+)  
MT2(+), G(−)  
_
20  
Latching Current  
IL  
_
30  
(VD = 24 V, IG = 50 mA)  
_
20  
0.5  
0.5  
0.69  
0.77  
GateTrigger Voltage  
VGT  
V
V
(VD = 12 V, RL = 100 Ω)  
MT2(−), G(−)  
MT2(+), G(+)  
MT2(+), G(−)  
MT2(−), G(−)  
0.5  
0.2  
0.2  
0.2  
0.72  
1.5  
_
_
_
_
Gate Non−Trigger Voltage  
VGD  
_
(VD = 12 V, RL = 100 Ω, TJ = 125°C)  
_
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may  
not be indicated by the Electrical Characteristics if operated under different conditions.  
2. Indicates PulseTest: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.  
Dynamic Characteristics  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Rate of Change of Commutating Current See Figure 10.  
(VD = 400 V, ITM = 4.4 A, Commutating dv/dt = 18 V/µs,Gate Open, TJ = 125°C,  
f = 250 Hz, No Snubber) CL = 10 µF LL = 40 mH  
dV/dt  
6.5  
A/ms  
Critical Rate of Rise of Off-State Voltage  
(VD = Rated VDRM, Exponential Waveform, RGK = 510 Ω, TJ = 125°C)  
dV/dt  
500  
V/µs  
© 2017 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: 08/30/17  
Thyristors  
Surface Mount – 400V - 800V > MAC9DG, MAC9MG, MAC9NG  
Voltage Current Characteristic of SCR  
Symbol  
VDRM  
IDRM  
Parameter  
+C urrent  
Quadrant 1  
MainTerminal 2 +  
Peak Repetitive Forward Off State Voltage  
Peak Forward Blocking Current  
Peak Repetitive Reverse Off State Voltage  
Peak Reverse Blocking Current  
Maximum On State Voltage  
Holding Current  
V
TM  
on state  
I
H
I
at V  
RRM  
RRM  
VRRM  
IRRM  
+V oltage  
DRM  
off state  
I
I
at V  
H
DRM  
Quadrant 3  
V
TM  
VTM  
IH  
Quadrant Definitions for aTriac  
Quadrant II  
Quadrant I  
I
Quadrant III  
Quadrant IV  
All polarities are referenced to MT1.  
With in−phase signals (using standard AC lines) quadrants I and III are used.  
© 2017 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: 08/30/17  
Thyristors  
Surface Mount – 400V - 800V > MAC9DG, MAC9MG, MAC9NG  
Figure 1. RMS Current Derating  
Figure 2. On-State Power Dissipation  
125  
120  
115  
12  
DC  
10  
180°  
α = 120, 90, 60, 30°  
8
120°  
6
4
α = 180°  
110  
105  
100  
60°  
DC  
90°  
α = 30°  
2
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
I
I
T(RMS)  
T(RMS)  
Figure 3. On−State Characteristics  
Figure 4.Thermal Response  
100  
1
TYPICAL AT  
T = 25°C  
J
MAXIMUM @ T= 125°C  
J
0.1  
10  
0.01  
4
0.1  
1
10  
100  
1000  
t, TIME (ms)  
Figure 5. Hold CurrentVariation  
40  
35  
30  
MAXIMUM @ T= 25°C  
J
1
MT2 POSITIVE  
25  
20  
15  
10  
5
MT2 NEGATIVE  
10  
0.1  
90  
0
0
0.51  
1.52  
2.53  
3.54 45  
.5  
T , JUNCTION TEMPERATURE °(C)  
J
V
T
© 2017 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: 08/30/17  
Thyristors  
Surface Mount – 400V - 800V > MAC9DG, MAC9MG, MAC9NG  
Figure 6. GateTrigger CurrentVariation  
Figure 7. GateTriggerVoltageVariation  
100  
10  
1
1
0.95  
0.9  
Q2  
Q3  
Q2  
0.85  
0.8  
Q3  
075  
0.7  
Q1  
Q1  
0.65  
0.6  
0.55  
0.5  
0.45  
0.4  
10  
50  
90  
110  
130  
70  
T , JUNCTION TEMPERATURE °(C)  
T , JUNCTION TEMPERATURE °(C)  
J
J
Figure 8. Critical Rate of Rise of Off-StateVoltage  
(Exponential)  
Figure 9. Critical Rate of Rise of CommutatingVoltage  
100  
5000  
4.5K  
4K  
3.5K  
MT2 NEGATIVE  
T = 125°C  
J
100°C  
75°C  
3K  
2.5K  
2K  
10  
1
1.5K  
1K  
f =  
t
2 t  
w
w
6f I  
TM  
(di/dt) =  
c
1000  
V
MT2 POSITIVE  
100  
DRM  
500  
0
1
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
1
10  
1000  
(di/dt), RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)  
c
R , GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)  
G
Figure 10. SimplifiedTest Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)  
L
1N4007  
L
200 V  
RMS  
ADJUST FOR  
, 60 Hz V  
MEASURE  
I
I
TM  
AC  
CHARGE  
CONTROL  
-
TRIGGER  
200 V  
CHARGE  
+
MT2  
1N914  
51  
MT1  
G
C
L
© 2017 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: 08/30/17  
Thyristors  
Surface Mount – 400V - 800V > MAC9DG, MAC9MG, MAC9NG  
Dimensions  
Part Marking System  
SEATING  
PLANE  
B
F
C
T
S
4
3
MAC9xG  
AYWW  
Q
A
K
12  
U
1
CASE 221A  
STYLE 4  
H
2
3
Z
x=  
D, M, or N  
A=  
Y=  
Assembly Location  
Year  
R
L
WW = Work Week  
V
G
J
D
N
Pin Assignment  
1
MainTerminal 1  
MainTerminal 2  
Gate  
Inches  
Millimeters  
Min Max  
Dim  
2
3
4
Min  
Max  
A
B
0.570  
0.380  
0.160  
0.025  
0.142  
0.095  
0.110  
0.014  
0.500  
0.045  
0.190  
0.100  
0.080  
0.045  
0.235  
0.000  
0.045  
−−−  
0.620  
0.405  
0.190  
0.035  
0.147  
0.105  
0.155  
0.022  
0.562  
0.060  
0.210  
0.120  
0.110  
0.055  
0.255  
0.050  
−−−  
14.48  
9.66  
4.07  
0.64  
3.61  
2.42  
2.80  
0.36  
12.70  
1.15  
15.75  
10.28  
4.82  
0.88  
3.73  
2.66  
3.93  
0.55  
14.27  
1.52  
MainTerminal 2  
C
D
Ordering Information  
F
G
H
J
Device  
Package  
Shipping  
MAC9DG  
K
L
TO-220  
(Pb-Free)  
MAC9MG  
MAC9NG  
50 Units / Rail  
N
Q
R
S
T
4.83  
2.54  
2.04  
1.15  
5.33  
3.04  
2.79  
1.39  
5.97  
0.00  
1.15  
6.47  
1.27  
U
V
Z
−−−  
2.04  
0.080  
−−−  
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,  
1982.  
2. CONTROLLING DIMENSION: INCH.  
3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND  
LEAD IRREGULARITIES ARE ALLOWED.  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and  
test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete  
Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics  
© 2017 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: 08/30/17  

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