MAC9MG [LITTELFUSE]
TRIAC, 600V V(DRM), 8A I(T)RMS, TO-220AB, CASE 221A-09, 3 PIN;型号: | MAC9MG |
厂家: | LITTELFUSE |
描述: | TRIAC, 600V V(DRM), 8A I(T)RMS, TO-220AB, CASE 221A-09, 3 PIN 局域网 PC 栅 三端双向交流开关 栅极 |
文件: | 总7页 (文件大小:509K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Thyristors
Surface Mount – 400V - 800V > MAC9DG, MAC9MG, MAC9NG
Pb
MAC9DG, MAC9MG, MAC9NG
Description
Designed primarily for full-wave ac control applications,
such as motor controls, heating controls and power
supplies; or wherever half−wave silicon gate−controlled,
solid−state devices are needed.
Features
• Blocking Voltage to 800 Volts
• On−State Current Rating of 8.0 Amperes RMS at 100°C
• Uniform GateTrigger Currents inThree Quadrants
• High Immunity to dv/dt − 500 V/µs minimum at 125°C
• Minimizes Snubber Networks for Protection
• Industry StandardTO−220 Package
• High Commutating di/dt − 6.5 A/ms minimum at 125°C
• These Devices are Pb−Free and are RoHS Compliant
Pin Out
Functional Diagram
MT2
MT1
G
CASE 221A
STYLE 4
1
Additional Information
2
Samples
Datasheet
Resources
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 400V - 800V > MAC9DG, MAC9MG, MAC9NG
Maximum Ratings (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
V
Peak Repetitive Off-State Voltage (Note 1)
(Gate Open, Sine Wave 50 to 60 Hz, TJ = 25° to 100°C)
VDRM
,
MAC9SD
MAC9M
MAC9N
400
600
800
VRRM
On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 100°C)
IT
8.0
80
A
A
(RMS)
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz, TJ = 125°C)
ITSM
Circuit Fusing Consideration (t = 8.3 ms)
I2t
26
16
A²sec
W
Peak Gate Power
(Pulse Width ≤ 1.0 µs, TC = 80°C)
PGM
Average Gate Power (t = 8.3 ms, TC = 80°C)
Operating JunctionTemperature Range
StorageTemperature Range
PG (AV)
0.35
W
°C
°C
TJ
-40 to +125
-40 to +150
Tstg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Thermal Characteristics
Rating
Symbol
Value
Unit
R8JC
Thermal Resistance,
Junction−to−Case (AC)
2.2
°C/W
Junction−to−Ambient
62.5
R8JA
TL
Maximum LeadTemperature for Soldering Purposes, 1/8” from case for
10 seconds
260
°C
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 400V - 800V > MAC9DG, MAC9MG, MAC9NG
Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted ; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
Peak Repetitive Blocking Current
(VD = VDRM = VRRM; Gate Open)
-
-
0.01
TJ = 25°C
IDRM
,
mA
IRRM
-
-
2.0
TJ = 125°C
Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
11 A)
Symbol
Min
Typ
Max
Unit
Peak On−State Voltage (Note 2) (ITM
=
VTM
−
1.2
1.6
50
50
5.0
50
50
80
50
1.5
1.5
V
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
10
10
10
–
16
18
GateTrigger Current
(Continuous dc)
IGT
mA
mA
mA
(VD = 12 V, RL = 100 Ω)
22
IH
30
Holding Current (VD = 12 V, Gate Open, Initiating Current = 150 mA))
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(+), G(+)
MT2(+), G(−)
_
20
Latching Current
IL
_
30
(VD = 24 V, IG = 50 mA)
_
20
0.5
0.5
0.69
0.77
GateTrigger Voltage
VGT
V
V
(VD = 12 V, RL = 100 Ω)
MT2(−), G(−)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
0.5
0.2
0.2
0.2
0.72
1.5
_
_
_
_
Gate Non−Trigger Voltage
VGD
_
(VD = 12 V, RL = 100 Ω, TJ = 125°C)
_
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may
not be indicated by the Electrical Characteristics if operated under different conditions.
2. Indicates PulseTest: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
Dynamic Characteristics
Characteristic
Symbol
Min
Typ
Max
Unit
Rate of Change of Commutating Current See Figure 10.
(VD = 400 V, ITM = 4.4 A, Commutating dv/dt = 18 V/µs,Gate Open, TJ = 125°C,
f = 250 Hz, No Snubber) CL = 10 µF LL = 40 mH
dV/dt
6.5
−
−
A/ms
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform, RGK = 510 Ω, TJ = 125°C)
dV/dt
500
−
−
V/µs
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 400V - 800V > MAC9DG, MAC9MG, MAC9NG
Voltage Current Characteristic of SCR
Symbol
VDRM
IDRM
Parameter
+C urrent
Quadrant 1
MainTerminal 2 +
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
V
TM
on state
I
H
I
at V
RRM
RRM
VRRM
IRRM
+V oltage
DRM
off state
I
I
at V
H
DRM
Quadrant 3
V
TM
VTM
IH
Quadrant Definitions for aTriac
Quadrant II
Quadrant I
I
Quadrant III
Quadrant IV
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 400V - 800V > MAC9DG, MAC9MG, MAC9NG
Figure 1. RMS Current Derating
Figure 2. On-State Power Dissipation
125
120
115
12
DC
10
180°
α = 120, 90, 60, 30°
8
120°
6
4
α = 180°
110
105
100
60°
DC
90°
α = 30°
2
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
I
I
T(RMS)
T(RMS)
Figure 3. On−State Characteristics
Figure 4.Thermal Response
100
1
TYPICAL AT
T = 25°C
J
MAXIMUM @ T= 125°C
J
0.1
10
0.01
4
0.1
1
10
100
1000
t, TIME (ms)
Figure 5. Hold CurrentVariation
40
35
30
MAXIMUM @ T= 25°C
J
1
MT2 POSITIVE
25
20
15
10
5
MT2 NEGATIVE
10
0.1
90
0
0
0.51
1.52
2.53
3.54 45
.5
T , JUNCTION TEMPERATURE °(C)
J
V
T
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 400V - 800V > MAC9DG, MAC9MG, MAC9NG
Figure 6. GateTrigger CurrentVariation
Figure 7. GateTriggerVoltageVariation
100
10
1
1
0.95
0.9
Q2
Q3
Q2
0.85
0.8
Q3
075
0.7
Q1
Q1
0.65
0.6
0.55
0.5
0.45
0.4
10
50
90
110
130
70
T , JUNCTION TEMPERATURE °(C)
T , JUNCTION TEMPERATURE °(C)
J
J
Figure 8. Critical Rate of Rise of Off-StateVoltage
(Exponential)
Figure 9. Critical Rate of Rise of CommutatingVoltage
100
5000
4.5K
4K
3.5K
MT2 NEGATIVE
T = 125°C
J
100°C
75°C
3K
2.5K
2K
10
1
1.5K
1K
f =
t
2 t
w
w
6f I
TM
(di/dt) =
c
1000
V
MT2 POSITIVE
100
DRM
500
0
1
10
15
20
25
30
35
40
45
50
55
60
1
10
1000
(di/dt), RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
c
R , GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
G
Figure 10. SimplifiedTest Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)
L
1N4007
L
200 V
RMS
ADJUST FOR
, 60 Hz V
MEASURE
I
I
TM
AC
CHARGE
CONTROL
-
TRIGGER
200 V
CHARGE
+
MT2
1N914
51
MT1
G
C
L
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 400V - 800V > MAC9DG, MAC9MG, MAC9NG
Dimensions
Part Marking System
SEATING
PLANE
B
F
C
T
S
4
3
MAC9xG
AYWW
Q
A
K
12
U
1
CASE 221A
STYLE 4
H
2
3
Z
x=
D, M, or N
A=
Y=
Assembly Location
Year
R
L
WW = Work Week
V
G
J
D
N
Pin Assignment
1
MainTerminal 1
MainTerminal 2
Gate
Inches
Millimeters
Min Max
Dim
2
3
4
Min
Max
A
B
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
−−−
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.022
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
−−−
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.55
14.27
1.52
MainTerminal 2
C
D
Ordering Information
F
G
H
J
Device
Package
Shipping
MAC9DG
K
L
TO-220
(Pb-Free)
MAC9MG
MAC9NG
50 Units / Rail
N
Q
R
S
T
4.83
2.54
2.04
1.15
5.33
3.04
2.79
1.39
5.97
0.00
1.15
6.47
1.27
U
V
Z
−−−
2.04
0.080
−−−
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND
LEAD IRREGULARITIES ARE ALLOWED.
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and
test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete
Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
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