MMSD301 [LGE]
Schottky Barrier Diode; 肖特基二极管
| 型号： | MMSD301 |
| 厂家： | 
LGE |
| 描述： | Schottky Barrier Diode |
| 文件： | 总3页 (文件大小：281K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMSD301/MMSD701
Schottky Barrier Diode
SOD-123
0.022(0.55)
Typ. Min.
0.053(1.35)
Max.
Features
Extremely low minority carrier lifetime.
0.152(3.85)
0.140(3.55)
0.112(2.85)
0.100(2.55)
Very low capacitance.
0.010(0.25)
Min.
Low reverse leakage.
Pb-Free packages are available.
0.067(1.70)
0.055(1.40)
0.006(0.15)
Typ. Min.
Applications
0.004(0.10)
Max.
Schottky barrier diodes.
Dimensions in inches and (millimeters)
Ordering Information
Type No.
Marking
Package Code
MMSD301
MMSD701
XT
XH
SOD-123
SOD-123
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Unit
Repetitive peak reverse voltage
MMSD301
MMSD701
30
VR
V
70
Forward continuous Current
Power Dissipation
IF
200
mA
mW
℃
Pd
Tj
225
Junction temperature
-55to +125
-65to +150
℃
Storage temperature range
Tstg
http://www.luguang.cn
mail:lge@luguang.cn
MMSD301/MMSD701
Schottky Barrier Diode
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Conditions
Min. Typ. Max.
Unit
Reverse Breakdown Voltage
MMSD301 V(BR)R
IR=10μA
30
V
MMSD701
MMSD301
70
Forward voltage
IF=1.0mA
IF=10mA
IF=1.0mA
IF=10mA
VR=25V
VR=35V
0.38 0.45
0.52 0.6
0.42 0.5
VF
V
MMSD701
0.7
13
1.0
Reverse current
MMSD301
MMSD701
200
200
nA
nA
IR
9.0
Diode Capacitance
0.9
0.5
1.5
1.0
MMSD301 Cd
MMSD701
VR=0V,f=1MHz
pF
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
http://www.luguang.cn
mail:lge@luguang.cn
MMSD301/MMSD701
Schottky Barrier Diode
http://www.luguang.cn
mail:lge@luguang.cn
相关型号：
MMSD301-T1-LF
Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2
WTE
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