MMSD301T1 [MOTOROLA]
SOD-123 Schottky Barrier Diodes; SOD- 123肖特基势垒二极管
| 型号： | MMSD301T1 |
| 厂家： | 
MOTOROLA |
| 描述： | SOD-123 Schottky Barrier Diodes |
| 文件： | 总6页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MMSD301T1/D
SEMICONDUCTOR TECHNICAL DATA
The MMSD301T1, and MMSD701T1 devices are spin–offs of our popular
MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed for
high–efficiency UHF and VHF detector applications. Readily available to many other
fast switching RF and digital applications.
Motorola Preferred Devices
•
•
•
Extremely Low Minority Carrier Lifetime
Very Low Capacitance
Low Reverse Leakage
2
1
2
Cathode
Anode
1
CASE 425–04, STYLE 1
SOD–123
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
MMSD301T1
MMSD701T1
V
R
30
70
Vdc
Forward Power Dissipation
P
225
mW
F
J
T
A
= 25°C
Junction Temperature
T
–55 to +125
–55 to +150
°C
°C
Storage Temperature Range
T
stg
DEVICE MARKING
MMSD301T1 = XT, MMSD701T1 = XH
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(I = 10 µA)
R
V
Volts
(BR)R
MMSD301T1
MMSD701T1
30
70
—
—
—
—
Diode Capacitance
(V = 0, f = 1.0 MHz, Note 1)
R
C
C
pF
T
T
MMSD301T1
MMSD701T1
—
—
0.9
0.5
1.5
1.0
Total Capacitance
pF
(V = 15 Volts, f = 1.0 MHz)
MMSD301T1
MMSD701T1
—
—
0.9
0.5
1.5
1.0
R
(V = 20 Volts, f = 1.0 MHz)
R
Reverse Leakage
I
R
(V = 25 V)
MMSD301T1
MMSD701T1
—
—
13
9.0
200
200
nAdc
nAdc
R
(V = 35 V)
R
Forward Voltage
V
F
Vdc
(I = 1.0 mAdc)
MMSD301T1
MMSD701T1
—
—
—
—
0.38
0.52
0.42
0.7
0.45
0.6
0.5
1.0
F
(I = 10 mA)
F
(I = 1.0 mAdc)
F
(I = 10 mA)
F
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
replaces MMSD101T1/D
Motorola, Inc. 1997
TYPICAL CHARACTERISTICS
MMSD301T1
2.8
2.4
2.0
1.6
1.2
500
MMSD301T1
MMSD301T1
f = 1.0 MHz
400
KRAKAUER METHOD
300
200
100
0
0.8
0.4
0
0
3.0
6.0
9.0
12
15
18
21
24
27
30
0
10
20
30
40
50
60
70
80
90 100
V
, REVERSE VOLTAGE (VOLTS)
I , FORWARD CURRENT (mA)
R
F
Figure 1. Total Capacitance
Figure 2. Minority Carrier Lifetime
10
100
10
MMSD301T1
= 100°C
MMSD301T1
T
A
1.0
T
= –40°C
A
T
= 85°C
A
T
= 75
= 25
°C
A
0.1
1.0
0.1
T
°C
A
T
= 25
0.6
°C
A
0.01
0.001
0
6.0
12
18
24
30
0.2
0.4
0.8
1.0
1.2
V
, REVERSE VOLTAGE (VOLTS)
V , FORWARD VOLTAGE (VOLTS)
F
R
Figure 3. Reverse Leakage
Figure 4. Forward Voltage
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL CHARACTERISTICS
MMSD701T1
2.0
1.6
500
MMSD701T1
MMSD701T1
f = 1.0 MHz
400
KRAKAUER METHOD
300
200
100
0
1.2
0.8
0.4
0
0
5.0
10
15
20
25
30
35
40
45
50
0
10
20
30
40
50
60
70
80
90 100
V
, REVERSE VOLTAGE (VOLTS)
I , FORWARD CURRENT (mA)
R
F
Figure 5. Total Capacitance
Figure 6. Minority Carrier Lifetime
10
100
10
MMSD701T1
= 100°C
MMSD701T1
T
A
1.0
T
= 85°C
T
= –40°C
A
A
T
= 75°C
A
0.1
1.0
0.1
T
= 25°C
0.01
A
T
= 25
10
°C
A
0.001
0
20
30
40
50
0.2
0.4
0.8
1.2
1.6
2.0
V
, REVERSE VOLTAGE (VOLTS)
V , FORWARD VOLTAGE (VOLTS)
R
F
Figure 7. Reverse Leakage
Figure 8. Forward Voltage
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
INFORMATION FOR USING THE SOD–123 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SOD–123
0.91
0.036
1.22
0.048
2.36
0.093
4.19
mm
inches
0.165
SOD–123 POWER DISSIPATION
The power dissipation of the SOD–123 is a function of the
calculate the power dissipation of the device which in this
case is 225 milliwatts.
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
125°C – 25°C
444°C/W
P
=
= 225 milliwatts
D
by T
, the maximum rated junction temperature of the
, the thermal resistance from the device junction to
J(max)
die, R
θJA
ambient, and the operating temperature, T . Using the
values provided on the data sheet for the SOD–123
The 444°C/W for the SOD–123 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOD–123 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad . Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
A
package, P can be calculated as follows:
D
T
– T
A
J(max)
P
=
D
R
θJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature T of 25°C, one can
A
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
•
•
•
The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
•
•
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100°C or less.*
•
Mechanical stress or shock should not be applied during
cooling.
•
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
A
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
H
1
INCHES
MILLIMETERS
DIM
A
B
C
D
E
H
J
K
MIN
MAX
0.071
0.112
0.053
0.028
–––
0.004
0.006
0.152
MIN
1.40
2.55
0.95
0.50
0.25
0.00
–––
MAX
1.80
2.85
1.35
0.70
–––
0.10
0.15
3.85
0.055
0.100
0.037
0.020
0.004
0.000
–––
K
B
0.140
3.55
E
2
STYLE 1:
PIN 1. CATHODE
2. ANODE
J
D
CASE 425–04
ISSUE C
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
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arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
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MMSD301T1/D
◊
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