MMBD352W [LGE]
Schottky Barrier Diodes; 肖特基势垒二极管
| 型号： | MMBD352W |
| 厂家： | 
LGE |
| 描述： | Schottky Barrier Diodes |
| 文件： | 总2页 (文件大小：254K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBD352W
Schottky Barrier Diodes
SOT-323
Features
Very low capacitance-less than 1.0Pf
@zero volts.
Low forward voltage-0.5 Voltage(Typ.)
@IF=10mA.
Applications
Dimensions in inches and (millimeters)
For UHF mixer applications.
Ordering Information
Type No.
Marking
M5
Package Code
SOT-323
MMBD352W
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Unit
V
Continuous reverse voltage
VR
7.0
Power Dissipation
Pd
200
mW
Thermal resistance junction-to-ambient
Junction temperature
RθJA
Tj
625
150
℃
℃
Storage temperature range
Tstg
-55-+150
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
Typ.
MAX
UNIT
VR=3.0V.
VR=7.0V
0.25
10
Reverse current
IR
μA
Forward voltage
VF
V
IF=10mA
0.60
1.0
Diode capacitance
CD
VR=0V, f=1MHz
pF
http://www.luguang.cn
mail:lge@luguang.cn
MMBD352W
Schottky Barrier Diodes
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
http://www.luguang.cn
mail:lge@luguang.cn
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ONSEMI
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