BAV199 [LGE]
Dual Surface Mount Low Leakage Diode; 双表面安装低漏电二极管
| 型号： | BAV199 |
| 厂家： | 
LGE |
| 描述： | Dual Surface Mount Low Leakage Diode |
| 文件： | 总2页 (文件大小：203K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAV199
Dual Surface Mount Low Leakage Diode
SOT-23
Features
Medium speed current applications.
Very low leakage current.
Surface mount package ideally suited
for automatic insertion
Applications
Dimensions in inches and (millimeters)
Small signal switching
Ordering Information
Type No.
Marking
JY
Package Code
SOT-23
BAV199
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Value
Unit
Repetitive peak reverse voltage
Working peak reverse voltage
DC Reverse voltage
VRRM
VRWM
VR
85
60
V
V
RMS Reverse Voltage
VR(RMS)
Peak forward surge current
@t=1.0μs
@t=1.0ms
@t=1.0s
4.0
1.0
0.5
IFSM
A
Forward continuous current
single diode
double diode
160
140
IFM
mA
Repetitive Peak Forward Current
Power dissipation
IFRM
Pd
500
mA
mW
℃/W
℃
250
Thermal Resistance Junction to Ambient Air
Operating and Storage Temperature Range
RθJA
Tj,TSTG
500
-65-150
http://www.luguang.cn
mail:lge@luguang.cn
BAV199
Dual Surface Mount Low Leakage Diode
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
V(BR)
Test conditions
MIN
85
MAX
UNIT
V
Reverse breakdown voltage
IR= 100μA
VR=75V
5.0
80
nA
nA
Reverse voltage leakage current
IR
VR=75V Tj=150℃
IF=1mA
900
IF=10mA
IF=50mA
IF=150mA
1000
1100
1250
Forward voltage
VF
mV
Junction capacitance
Reverse recovery time
Cj
trr
VR=0V f=1MHz
2.0
pF
IF=IR=10mA Irr=0.1*IR
3.0
μS
RL=100Ω
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
http://www.luguang.cn
mail:lge@luguang.cn
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