MJD32C [KEXIN]
Complementary Power Transistors; 互补功率晶体管
| 型号： | MJD32C |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Complementary Power Transistors |
| 文件： | 总2页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
Complementary Power Transistors
MJD31,MJD31C(NPN)
MJD32,MJD32C(PNP)
TO-252
Unit: mm
6.50+0.15
-0.15
2.30+0.1
-0.1
Features
5.30+0.2
0.50+0.8
-0.7
-0.2
Lead Formed for Surface Mount Applications in Plastic Sleeves
Pb-Free Packages are Available
0.127
max
0.80+0.1
-0.1
0.60+0.1
2.3
4.60+0.15
-0.1
1 Base
-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-emitter voltage
Symbol
Rating
40
100
40
100
5
Unit
V
MJD31,MJD32
VCEO
MJD31C,MJD32C
MJD31,MJD32
V
Collector-base voltage
V
VCB
MJD31C,MJD32C
V
Emitter-base voltage
Collector current
VEB
IC
ICP
IB
V
3
A
Collector current (pulse)
Base current
5
A
1
A
Total Device Dissipation FR-5 Board
@TA = 25
PD
PD
W
15
Derate above 25
0.12
W/
Total Device Dissipation Alumina Substrate
@TA = 25
W
1.56
Derate above 25
0.012
W/
Junction temperature
Tj
150
-65 to +150
8.3
Storage temperature
Tstg
RèJC
RèJA
TL
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Lead Temperature for Soldering Purposes
/W
/W
80
260
1
www.kexin.com.cn
SMD Type
Transistors
MJD31,MJD31C(NPN)
MJD32,MJD32C(PNP)
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min Typ Max Unit
Collector-emitter sustaining voltage MJD31,MJD32
MJD31C,MJD32C
40
V
V
VCEo(sus) IC = 30 mA, IB = 0
100
Collector cutoff current
MJD31,MJD32
VCE = 40 V, IB = 0
ICEO
VCE = 60 V, IB = 0
50
50
20
1
ìA
ìA
ìA
mA
MJD31C,MJD32C
Collector cutoff current
Emitter cutoff current
ICES
IEBO
VCE = Rated VCEO,VEB = 0
VBE = 5V, IC = 0
IC = 1 A, VCE = 4 V
IC = 3 A, VCE = 4 V
25
10
DC current gain *
hFE
50
1.2
1.8
Collector-emitter saturation voltage *
Base-emitter saturation voltage
VCE(sat) IC = 3 A, IB = 375 mA
VBE(on) IC = 3 A, VCE = 4 V
V
V
*
Current-gain-bandwidth product *2
Small-signal current gain
fT
IC = 500 mA,VCE = 10 V,ftest = 1 MHz
3
MHz
hfe
IC = 0.5 A, VCE = 10 V, f = 1 kHz
20
*1 Pulse test: pulse width
*2 fT= hfe ftest
300 ìs, duty cycle
2.0%.
hFE Classification
TYPE
MJD31
J31
MJD31C
J31C
MJD32
J32
MJD32C
J32C
Marking
2
www.kexin.com.cn
相关型号：
MJD32CQ-13
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3/2
DIODES
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