KTA1270-Y [KEXIN]
PNP Transistors;
| 型号： | KTA1270-Y |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | PNP Transistors |
| 文件： | 总2页 (文件大小：701K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DIP Type
Transistors
PNP Transistors
KTA1270
Unit:mm
3.8 ± 0.3
TO-92
4.8 ± 0.3
■ Features
● Excellent hFE Linearity
● Complementary to KTC3202.
0.60 Max
0.45 ± 0.1
0.5
2
3
1
1.Emitter
2.Collector
3.Base
1.27
2.54
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
Unit
VCBO
VCEO
VEBO
-35
-30
V
-5
Collector Current - Continuous
Emitter Current\
I
C
-500
500
mA
mW
℃
I
E
Collector Power Dissipation
Junction Temperature
P
C
625
T
J
150
Storage Temperature range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
-35
-30
-5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= -100uA， I
Ic= -1 mA，I =0
= -100 uA， I =0
CB= -35V , I =0
EB= 5V , I =0
E=0
B
I
E
C
I
CBO
EBO
V
V
E
-0.1
-0.1
-0.25
-1.2
-1
uA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
V
CE(sat)
BE(sat)
I
I
C
=-100mA, I
B
=-10mA
=-10mA
V
C
=-100mA, I
B
V
BE(on)
V
V
CE= -1V, I
CE= -1V, I
C
= -100mA
= -100mA
hFE(1)
C
70
25
40
240
DC current gain
O
Y
hFE(2)
V
CE= -6V, I
C= -400mA
Collector output capacitance
Transition frequency
C
ob
V
V
CB= -6V, I
CE= -6V, I
E
=0,f=1MHz
13
pF
f
T
C
= -20mA
200
MHz
■ Classification of hfe(1)
Type
KTA1270-O
KTA1270-Y
120-240
Range
70-140
1
www.kexin.com.cn
DIP Type
Transistors
PNP Transistors
KTA1270
■ Typical Characterisitics
h
FE
- I
I
C
- V
C
CE
-600
1k
COMMON
COMMON EMITTER
-8 -7 -6
-500
EMITTER
500
-5
Ta=25 C
-4
300
Ta=100 C
Ta=25 C
V
CE
=-6V
-400
-300
-200
-3
-2
100
Ta=-25 C
V
CE
=-1V
50
30
I
=-1mA
B
-100
0
0
10
-0.3
-1
-3
-10
-30 -100
-300
-1k
0
-1
-2
-3
-4
-5
COLLECTOR CURRENT IC (mA)
- V
COLLECTOR-EMITTER VOLTAGE VCE (V)
I
B
V
CE(sat)
- I
C
BE
-3
-1
-3k
COMMON
EMITTER
COMMON EMITTER
/I =10
I
-1k
-300
-100
-30
B
C
V
CE
=-6V
-0.5
-0.3
-0.1
-10
Ta=100 C
Ta=25 C
-0.05
-0.03
-3
-1
Ta=-25 C
-0.01
-0.3
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-0.5 -1
-3
-10
-30 -100
-300
-1k
BASE-EMITTER VOLTAGE VBE (V)
COLLECTOR CURRENT IC (mA)
SAFE OPERATING AREA
-10000
-1000
-100
-10
IC MAX(PULSE)*
1mS*
10mS*
IC MAX(CONTINUOUS)
100mS*
DC DPERATION(Ta=25 C)
*SINGLE NONREPETITIVE PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN TEMPERATURE
-1
-0.1
-1
-10
-100
COLLECTOR-EMITTER VOLTAGE VCE (V)
2
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