FMMT549A [KEXIN]
Medium Power Transistor; 中功率晶体管
| 型号： | FMMT549A |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Medium Power Transistor |
| 文件： | 总2页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
Medium Power Transistor
FMMT549A
SOT-23
Unit: mm
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Features
3
Low equivalent on-resistance.
1
2
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
1.9
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
VCBO
VCEO
VEBO
ICM
Rating
Unit
V
-35
-30
V
-5
-2
V
Peak collector current
Collector current
A
IC
-1
A
Base current
IB
-200
mA
mW
Power dissipation
Ptot
500
Operating and storage temperature range
Tj,Tstg
-55 to +150
1
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SMD Type
Transistors
FMMT549A
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
-35
-30
-5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector cutoff current
V(BR)CBO IC=-100ìA
V(BR)CEO IC=-10mA
V(BR)EBO IE=-100ìA
V
V
ICBO
IEBO
VCB=-30V
VEB=-4V
-0.1
-0.1
-0.3
ìA
ìA
V
Emitter cut-off current
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base-emitter voltage *
VCE(sat) IC=-100mA,IB=-1A
VBE(sat) IC=-1A,IB=-100mA
VBE(ON) IC=-1A,VCE=-2V
IC=-50mA, VCE=-2V
-0.9 -1.25
V
-0.85
200
130
80
-1
V
70
80
IC=-1A, VCE=-2V
hFE
IC=-2A, VCE=-2V
DC current gain *
40
IC=-500mA,VCE=-2V
150
100
200
500
25
Current-gain-bandwidth product
Output capacitance
fT
Cobo
ton
IC=-100mA,VCE=-5V,f=100MHz
MHz
pF
VCB=-10V,f=1MHz
VCB=-10V, f=1MHz
50
ns
Switching times
toff
IC=-500mA,VCC=-10V,IB1=IB2=-50mA
300
ns
* Pulse test: tp
300 ìs; d
0.02.
Marking
Marking
59A
2
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