FMMT551 [ZETEX]
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR; PNP硅平面中功率晶体管
| 型号： | FMMT551 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | PNP SILICON PLANAR MEDIUM POWER TRANSISTOR |
| 文件： | 总2页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - OCTOBER 1995
FMMT551
FEATURES
*
*
60 Volt VCEO
E
1 Amp continuous current
C
B
COMPLEMENTARY TYPE
PARTMARKING DETAIL
FMMT451
551
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
-80
Collector-Emitter Voltage
Emitter-Base Voltage
-60
V
-5
-2
V
Peak Pulse Current
A
Continuous Collector Current
Base Current
IC
-1
A
IB
-200
mA
mW
°C
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
Ptot
500
Tj:Tstg
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
= 25°C).
amb
PARAMETER
SYMBOL MIN.
MAX.
UNIT
V
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -80
IC=-100µA
Collector-Emitter
Sustaining Voltage
VCEO(sus) -60
V
V
IC=-10mA*
IE=-100µA
VCB=-60V
Emitter-Base Breakdown V(BR)EBO
Voltage
-5
Collector Cut-Off Current ICBO
-0.1
µA
µA
V
Emitter Cut-Off Current
IEBO
-0.1
VEB=-4V
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.35
IC=-150mA, IB=-15mA*
Base-Emitter
Saturation Voltage
VBE(sat)
hFE
-1.1
150
V
IC=-150mA, IB=-15mA*
Static Forward Current
Transfer Ratio
50
10
IC=-150mA, VCE=-10V*
IC=-1A, VCE=-10V*
Transition
Frequency
fT
150
MHz
pF
IC=-50mA, VCE=-10V
f=100MHz
Output Capacitance
Cobo
25
VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
3 - 129
FMMT551
TYPICAL CHARACTERISTICS
I
- Collector Current (Amps)
I
- Collector Current (Amps)
VCE(sat) v IC
hFE v IC
I
- Collector Current (Amps)
I
- Collector Current (Amps)
VBE(sat) v IC
VBE(on) v IC
10
1
0.1
µ
0.01
0.1V
1V
10V
100V
VCE - Collector Emitter Voltage (V)
Safe Operating Area
3 - 130
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