BAV199 [KEXIN]
Low-leakage double diode; 低漏电双二极管![BAV199](http://pdffile.icpdf.com/pdf1/p00156/img/icpdf/BAV19_861221_icpdf.jpg)
型号: | BAV199 |
厂家: | ![]() |
描述: | Low-leakage double diode |
文件: | 总2页 (文件大小:40K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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SMD Type
Diodes
Low-leakage double diode
BAV199
SOT-23
Unit: mm
+0.1
2.9
-0.1
+0.1
0.4
-0.1
3
Features
Plastic SMD package
Low leakage current: typ. 3 pA
1
2
Switching time: typ. 0.8
s
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
1.9
-0.1
Continuous reverse voltage:max. 75 V
Repetitive peak reverse voltage:max. 85 V
Repetitive peak forward current:max. 500 mA.
Absolute Maximum Ratings Ta = 25
Parameter
Repetitive peak reverse voltage
Continuous reverse voltage
Symbol
VRRM
VR
Conditions
Min
Max
Unit
V
85
75
V
single diode loaded
double diode loaded
160
140
500
Continuous forward current
IF
mA
mA
Repetitive peak forward current
IFRM
square wave; Tj = 25
prior to surge;
t = 1 ìs
t = 1 ms
t = 1 s
4
Non-repetitive peak forward current
IFSM
A
1
0.5
250
+150
150
360
500
Total power dissipation
Ptot
Tstg
mW
Tamb = 25
Storage temperature
-65
Junction temperature
Tj
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
Rth j-t p
Rth j-a
K/W
K/W
1
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SMD Type
Diodes
BAV199
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
IF = 1 mA
Typ
Max
900
1000
1100
1250
5
Unit
mV
IF = 10 mA
Forward voltage
VF
IF = 50 mA
IF = 150 mA
VR = 75 V
0.003
Reverse current
IR
Cd
trr
nA
pF
ìs
3
2
80
VR = 75 V; Tj = 150
f = 1 MHz; VR = 0;
when switched from IF = 10 mA to IR = 10 mA;
Diode capacitance
Reverse recovery time
0.8
3
RL = 100 ;measured at IR = 1 mA;
Marking
Marking
JYp
2
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