BAS70-07 [KEXIN]
Schottky Barrier (Double) Diodes; 肖特基势垒(双)二极管![BAS70-07](http://pdffile.icpdf.com/pdf1/p00155/img/icpdf/BAS70_861017_icpdf.jpg)
型号: | BAS70-07 |
厂家: | ![]() |
描述: | Schottky Barrier (Double) Diodes |
文件: | 总1页 (文件大小:36K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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SMD Type
Diodes
Schottky Barrier (Double) Diodes
BAS70-07
Unit: mm
Features
Low forward voltage
High breakdown voltage
Guard ring protected
Small plastic SMD package
Low diode capacitance.
Absolute Maximum Ratings Ta = 25
Parameter
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
Symbol
VR
Test Condition
MIN
MAX
70
Unit
V
IF
70
mA
mA
A
IFRM
IFSM
Tstg
Tj
70
tp
1 s;ä
0.5
tp < 10 ms
100
+150
150
+150
500
-65
-65
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
Tamb
Rth j-a
K/W
Electrical Characteristics Ta = 25
Parameter
Symbol
Test Condition
Min
Max
Unit
mV
mV
V
IF = 1 mA
IF = 10 mA
410
750
1
forward voltage
reverse current
VF
IF = 15 mA
VR = 50 V;note 1
VR = 70 V;note 1
IF = 5 mA
100
10
nA
A
IR
charge carrier life time (Krakauer method)
diode capacitance
ô
100
2
ps
Cd
f = 1 MHz; VR = 0
pF
Note
1. Pulse test: tp = 300 ms; ä = 0.02.
Marking
Marking
77
1
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