首页 |元器件品牌

BAS70-07S [STMICROELECTRONICS]

RF DETECTION DIODE; RF检波二极管
BAS70-07S
型号： BAS70-07S
厂家： ST    ST
描述：

RF DETECTION DIODE
RF检波二极管

二极管 光电二极管
文件： 总4页 (文件大小：36K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
BAS70-07S / BAS70-08S  
®
RF DETECTION DIODE  
FEATURES AND BENEFITS  
■
■
■
LOW DIODE CAPACITANCE  
LOW SERIES INDUCTANCE AND RESISTANCE  
SURFACE MOUNT PACKAGE  
DESCRIPTION  
Dual and Triple Schottky diode in SOT323-6L  
package. This diode is intented to be used in RF  
application for signal detection and temperature  
compensation.  
SOT323-6L  
BAS70-08S SCHEMATIC DIAGRAM  
BAS70-07S SCHEMATIC DIAGRAM  
1
2
3
6
5
4
1
2
3
6
5
4
ABSOLUTE RATINGS (limiting values)  
Symbol  
VR  
Parameter  
Value  
Unit  
V
Continuous reverse voltage  
Continuous forward current  
Repetitive peak forward current  
Surge non repetitive forward current  
Power Dissipation  
70  
IF  
70  
mA  
mA  
A
IFRM  
IFSM  
P
70  
tp = 10 ms sinusoidal  
Ta = 55°C  
1
250  
mW  
°C  
Tstg  
Tj  
Storage temperature range  
Maximum junction temperature  
Maximum temperature for soldering  
- 65 to +150  
150  
°C  
TL  
260  
°C  
December 2001 - Ed: 2A  
1/4  
BAS70-07S / BAS70-08S  
THERMAL RESISTANCE  
Symbol  
Parameter  
Value  
Unit  
Rth (j-a) Junction to ambient on printed circuit board FR4  
with recommended pad layout  
500  
°C/W  
STATIC ELECTRICAL CHARACTERISTICS (Tj = 25°C otherwise specified)  
Symbol  
Parameter  
Tests Conditions  
IF = 1 mA  
Min. Typ. Max.  
Unit  
V
VF  
Forward voltage drop  
0.41  
IF = 10 mA  
0.75  
V
IF = 15 mA  
1
V
IR  
Reverse leakage current  
Breakdown voltage  
VR = 70 V  
10  
µA  
V
VBR  
IR = 10 µA  
70  
ELECTRICAL CHARACTERISTICS  
Symbol  
Parameter  
Tests Conditions  
Min. Typ. Max. Unit  
C
Junction capacitance  
VR = 0 V  
IF = 10 mA  
F = 1 MHz  
2
pF  
RF  
Differential forward  
resistance  
F = 100 MHz  
30  
Ohm  
Ls  
Series inductance  
1.5  
nH  
2/4  
BAS70-07S / BAS70-08S  
Fig. 1: Forward voltage drop versus forward  
current (typical values).  
Fig. 2: Reverse leakage current versus reverse  
voltage applied (typical values).  
IR(µA)  
IFM(mA)  
1.E+02  
1.E+02  
Tj = 150°C  
1.E+01  
1.E+01  
Tj = 85°C  
1.E+00  
Tj=150°C  
1.E-01  
Tj=125°C  
1.E+00  
Tj=85°C  
Tj=25°C  
Tj = 25°C  
1.E-02  
VFM(V)  
Tj=-40°C  
VR(V)  
1.E-01  
1.E-03  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
10  
20  
30  
40  
50  
60  
70  
Fig. 3: Differential forward resistance versus  
forward current (typical values).  
Fig. 4: Junction capacitance versus reverse  
voltage applied (typical values).  
Rf(Ω)  
C(pF)  
1000  
1.5  
F = 10kHz  
Tj = 25°C  
F = 1MHz  
Vosc = 30mVRMS  
Tj = 25°C  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
100  
VR(V)  
IF(mA)  
0.1  
10  
0.0  
0.1  
1.0  
10.0  
0
10  
20  
30  
40  
50  
60  
70  
Fig. 5: Variation of thermal impedance junction to  
ambient versus pulse duration (printed circuit  
board, epoxy FR4).  
Fig. 6: Thermal resistance junction to ambient  
versus copper surface under each lead (printed  
circuit board, epoxy FR4).  
Zth(j-a)(°C/W)  
Rth(j-a)  
1000.0  
600  
550  
500  
450  
400  
350  
100.0  
tp(s)  
S(mm²)  
10.0  
300  
1.E-02  
1.E-01  
1.E+00  
1.E+01  
1.E+02  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
3/4  
BAS70-07S / BAS70-08S  
PACKAGE MECHANICAL DATA  
SOT323-6L  
DIMENSIONS  
Millimeters Inches  
Min.  
A2  
A
A1  
REF.  
Min.  
0.8  
0
Max.  
1.1  
0.1  
1
Max.  
0.043  
0.004  
0.039  
0.012  
0.007  
0.086  
0.053  
A
A1  
A2  
b
0.031  
0
D
0.8  
0.15  
0.1  
1.8  
1.15  
0.031  
0.006  
0.004  
0.071  
0.045  
e
e
0.3  
0.18  
2.2  
1.35  
c
D
E
HE  
E
e
0.65 Typ.  
0.025 Typ.  
HE  
Q1  
1.8  
0.1  
2.4  
0.4  
0.071  
0.004  
0.094  
0.016  
Q1  
c
b
FOOTPRINT DIMENSIONS (millimeters)  
0.3mm  
1mm  
2.9mm  
1mm  
0.35mm  
MARKING  
Type  
Marking  
D32  
Package  
SOT323-6L  
Weight  
Base qty  
Delivery mode  
BAS70-07S  
BAS70-08S  
0.006g  
3000  
Tape & reel  
D33  
■
Epoxy meets UL94, V0  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of  
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by  
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to  
change without notice. This publication supersedes and replaces all information previously supplied.  
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-  
proval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics  
© 2001 STMicroelectronics - Printed in Italy - All rights reserved.  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany  
Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore  
Spain - Sweden - Switzerland - United Kingdom - United States.  
http://www.st.com  
4/4  

相关型号：

BAS70-07S,115

 BAS70 series; 1PS7xSB70 series - General-purpose Schottky diodes TSSOP 6-Pin
NXP

BAS70-07S-Q

 General-purpose dual Schottky diodeProduction
NEXPERIA

BAS70-07S-T

 DIODE 0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SC-88, 6 PIN, Signal Diode
NXP

BAS70-07SFILM

 Low capacitance, low series inductance and resistance Schottky diodes
STMICROELECTR

BAS70-07T/R

 DIODE 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SMD, 4 PIN, Signal Diode
NXP

BAS70-07V

 General-purpose Schottky diodes
NXP

BAS70-07V

 General-purpose dual Schottky diodeProduction
NEXPERIA

BAS70-07V,115

 BAS70 series; 1PS7xSB70 series - General-purpose Schottky diodes SOT 6-Pin
NXP

BAS70-07W

 Silicon Schottky Diode (General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing)
INFINEON

BAS70-07W-E6327

 Diode,
INFINEON

BAS70-07W-E6433

 Diode,
INFINEON

BAS70-08S

 RF DETECTION DIODE
STMICROELECTR
©2020 ICPDF网 联系我们和版权申明