2SK3640 [KEXIN]
MOS Field Effect Transistor; MOS场效应
| 型号： | 2SK3640 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | MOS Field Effect Transistor |
| 文件： | 总2页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
100V N-Channel PowerTrench MOSFET
KDD3670
TO-252
Unit: mm
+0.15
-0.15
+0.1
2.30
-0.1
6.50
+0.2
5.30
-0.2
+0.8
0.50
-0.7
Features
34 A, 100 V. RDS(ON) = 32m @ VGS = 10 V
RDS(ON) = 35m @ VGS = 6 V
Low gate charge (57 nC typical)
Fast switching speed
0.127
max
+0.1
0.80
-0.1
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
+0.1
0.60
-0.1
1. Gate
2.3
4.60
+0.15
-0.15
2. Drain
3. Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Symbol
VDSS
Rating
100
20
Unit
V
Gate to Source Voltage
VGS
V
Drain Current Continuous (Note 1)
Drain Current Pulsed
34
A
ID
100
83
A
Power dissipation @ TC=25
Power dissipation @ Ta=25
Power dissipation @ Ta=25
(Note 1)
PD
W
3.8
(Note 1a)
(Note 1b)
1.6
Operating and Storage Temperature
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
TJ, TSTG
-55 to 175
1.8
R
R
JC
JA
/W
/W
96
1
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SMD Type
Transistors
KDD3670
Electrical Characteristics Ta = 25
Parameter
Symbol
WDSS
IAR
Testconditons
VDD = 50 V, ID = 7.3A (Not 2)
( Not 2)
Min
100
Typ
Max
360
7.3
Unit
mJ
A
Single Pulse Drain-Source Avalanche Energy
Maximum Drain-Source Avalanche Current
Drain-Source Breakdown Voltage
BVDSS
V
VGS = 0 V, ID = 250
A
Breakdown Voltage Temperature Coefficient
92
ID = 250 A, Referenced to 25
mV/
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
Gate Threshold Voltage
IDSS
IGSSF
IGSSR
VGS(th)
VDS = 80 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
1
100
-100
4
A
nA
nA
V
2
2.5
VDS = VGS, ID = 250
A
Gate Threshold Voltage Temperature
Coefficient
-7.2
ID = 250 A, Referenced to 25
mV/
m
VGS = 10 V, ID = 7.3 A
VGS = 10 V, ID = 7.3 A,TJ = 125
VGS = 6 V, ID =7 A,
22
39
24
32
56
35
Static Drain-Source On-Resistance
RDS(on)
On-State Drain Current
Forward Transconductance
Input Capacitance
ID(on)
gFS
Ciss
Coss
Crss
td(on)
tr
VGS = 10 V, VDS = 5 V
VDS = 5 V, ID = 7.3 A
25
15
A
31
2490
265
80
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VDS = 50 V, VGS = 0 V,f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
16
26
18
84
40
80
10
VDD = 30 V, ID = 1 A,VGS = 10 V, RGEN
= 6
Turn-Off Delay Time
Turn-Off Fall Time
td(off)
tf
56
25
Total Gate Charge
Qg
57
VDS = 50 V, ID = 7.3 A,VGS = 10 V
(Note 2)
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
11
15
Maximum Continuous Drain-Source Diode
Forward Current
IS
2.7
1.2
A
V
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 2.7 A (Not 2)
0.72
2
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相关型号：
2SK3641-ZK
36000mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB, TO-252, MP-3ZK, 3 PIN
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