2SK1483 [KEXIN]
MOS Field Effect Transistor; MOS场效应
| 型号： | 2SK1483 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | MOS Field Effect Transistor |
| 文件： | 总1页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
MOSFET
MOS Field Effect Transistor
2SK1483
SOT-89
Unit: mm
+0.1
4.50
-0.1
+0.1
1.50
-0.1
+0.1
1.80
-0.1
Features
Can be driven directly an IC operating with a 5V single power supply.
Low ON-state resistance
3
0.53
2
1
+0.1
0.48
-0.1
+0.1
-0.1
+0.1
0.44
-0.1
RDS(on)=0.8 MAX. At VGS=4V,ID=0.5A
RDS(on)=0.4 MAX. At VGS=10V,ID=0.5A
1 Gate
+0.1
3.00
-0.1
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
Unit
V
30
20
Gate to source voltage
Drain current (DC)
V
A
2.0
Drain current(pulse) *
Power dissipation
ID
A
4.0
PD
2.0
W
Channel temperature
Storage temperature
* PW 10ms, duty cycle
Tch
150
Tstg
-55 to +150
5%
Electrical Characteristics Ta = 25
Parameter
Symbol
IDSS
IGSS
VGS(off) VDS=10V,ID=1mA
Testconditons
Min
Typ
Max
10
Unit
A
Drain cut-off current
VDS=30V,VGS=0
Gate leakage current
VGS= 20V,VDS=0
5.0
A
Gate to source cutoff voltage
Forward transfer admittance
0.9
20
1.2
38
22
14
8
1.5
V
VDS=10V,ID=0.5A
VGS=4.0V,ID=0.5A
VGS=10V,ID=0.5A
ms
Yfs
40
20
Drain to source on-state resistance
RDS(on)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Ciss
Coss
Crss
td(on)
tr
pF
pF
pF
ns
ns
ns
ns
VDS=10V,VGS=0,f=1MHZ
7
3
15
50
420
240
ID=0.5A,VGS(on)=10V,RL=50
,VDD=25V,RG=10
Turn-off delay time
Fall time
td(off)
tf
Marking
Marking
NB
1
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