2SD1819A-S [KEXIN]
NPN Transistors;
| 型号： | 2SD1819A-S |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Transistors |
| 文件： | 总2页 (文件大小：868K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Transistors
2SD1819A
■ Features
● Low Collector-to-Emitter Saturation Voltage
● High foward current transfer ratio hFE
.
● Complementary to 2SB1218A
1 Base
2 Emitter
3 Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
60
Unit
V
VCBO
VCEO
VEBO
50
7
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
I
C
100
mA
mW
℃
I
CP
200
P
C
150
T
J
150
Storage Temperature Range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector-emitter cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
60
50
7
Ic= 100 μA， I
Ic= 2 mA， I = 0
= 100μA， I
E= 0
B
I
E
C= 0
ICBO
ICEO
I
EBO
V
V
V
CB= 50 V , I
CE= 40 V , I
EB= 6V , I
E
= 0
= 0
0.1
10
uA
V
B
C
=0
0.1
0.3
1.2
460
Collector-emitter saturation voltage
Base - emitter saturation voltage
V
CE(sat)
BE(sat)
I
I
C
=100mA, I
B
=10mA
=10mA
0.1
V
C
=100mA, I
B
hFE(1)
V
V
V
V
CE= 10V, I
CE= 2V, I
C
= 2mA
160
90
DC current gain
hFE(2)
C
= 100 mA
Collector output capacitance
Transition frequency
Cob
CB= 10V, I
CE= 10V, I
E
= 0,f=1MHz
3.5
pF
f
T
E= -2 mA,f=1MHz
150
MHz
■ Classification of hfe(1)
Type
Range
Marking
2SD1819A-Q
160-260
ZQ
2SD1819A-R
2SD1819A-S
290-460
ZS
210-340
ZR
1
www.kexin.com.cn
SMD Type
Transistors
NPN Transistors
2SD1819A
■ Typical Characterisitics
PC — Ta
IC — VCE
IB — VBE
240
60
1200
1000
800
600
400
200
0
Ta=25˚C
VCE=10V
Ta=25˚C
IB=160µA
200
160
120
80
50
140µA
40
120µA
100µA
30
80µA
20
10
0
60µA
40µA
20µA
40
0
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1.0
(
)
(
V
)
( )
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
IC — VBE
IC — IB
VCE(sat) — IC
200
160
120
80
240
100
IC/IB=10
VCE=10V
VCE=10V
Ta=25˚C
30
10
200
160
120
80
3
1
25˚C
Ta=75˚C
–25˚C
0.3
0.1
25˚C
Ta=75˚C
40
40
–25˚C
0.03
0.01
0
0
0
0.4
0.8
1.2
1.6
2.0
0
200
400
600
800
1000
0.1
0.3
1
3
10
30
100
( )
V
(
)
(
)
Base to emitter voltage VBE
Base current IB µA
Collector current IC mA
hFE — IC
fT — IE
600
500
400
300
200
100
0
300
240
180
120
60
VCE=10V
VCB=10V
Ta=25˚C
Ta=75˚C
25˚C
–25˚C
0
0.1
0.3
1
3
10
30
100
– 0.1 – 0.3
–1
–3
–10 –30 –100
(
)
(
)
Collector current IC mA
Emitter current IE mA
2
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