2SD1805-E [KEXIN]
NPN Transistors;
| 型号： | 2SD1805-E |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Transistors |
| 文件： | 总3页 (文件大小：1238K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Transistors
2SD1805
TO-252
Unit: mm
+0.15
-0.15
6.50
+0.1
-0.1
2.30
+0.8
-0.7
+0.2
5.30
-0.2
0.50
■ Features
● Low Collector-to-Emitter Saturation Voltage
● Fast Switching Speed
0.127
max
+0.1
-0.1
0.80
● Large current capacity
0.1
0.1
0.60+-
1 Base
2.3
+0.15
-0.15
4.60
2 Collector
3 Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
60
20
6
Unit
V
VCBO
VCEO
VEBO
Collector Current - Continuous
Collector Current - Pulse
I
C
5
A
I
CP
8
15
1
Collector Power Dissipation
Tc = 25℃
Ta = 25℃
P
C
W
℃
Junction Temperature
T
J
150
Storage Temperature Range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
60
20
6
Ic= 100 μA， I
Ic= 1 mA， RBE= ∞
= 100μA， I = 0
CB= 50 V , I = 0
EB= 5V , I =0
E= 0
I
E
C
I
CBO
EBO
V
V
E
0.1
0.1
0.5
1.5
560
uA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
V
CE(sat)
BE(sat)
I
I
C
=3 A, I
B
=60mA
=60mA
0.22
V
C
=3 A, I
B
hFE(1)
V
V
CE= 2V, I
CE= 2V, I
C
= 500mA
= 3 A
120
95
DC current gain
hFE(2)
C
Turn-on Time
t
on
30
300
40
See Test Circuit
ns
Storage Time
t
stg
Fall Time
t
f
Collector output capacitance
Transition frequency
C
ob
T
V
V
CB= 10V, I
CE= 10V, I
E
= 0,f=1MHz
45
pF
f
C
= 50 mA
120
MHz
■ Classification of hfe(1)
Type
2SD1805-E
120-200
2SD1805-F
160-320
2SD1805-G
280-560
Range
1
www.kexin.com.cn
SMD Type
Transistors
NPN Transistors
2SD1805
■ Typical Characterisitics
2
www.kexin.com.cn
SMD Type
Transistors
NPN Transistors
2SD1805
3
www.kexin.com.cn
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