2SD1805F-E [ONSEMI]
Bipolar Transistor 20V, 5A, Low VCE(sat), NPN Single TP/TP-FA;
| 型号： | 2SD1805F-E |
| 厂家： | 
ONSEMI |
| 描述： | Bipolar Transistor 20V, 5A, Low VCE(sat), NPN Single TP/TP-FA 开关 晶体管 |
| 文件： | 总9页 (文件大小：405K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN2115C
2SD1805
Bipolar Transistor
http://onsemi.com
(
)
sat , NPN Single TP/TP-FA
20V, 5A, Low V
CE
Applications
•
Strobes, voltage regulators, relay drivers, lamp drivers
Features
•
•
•
•
Low saturation voltage
Large current capacity
Fast switching time
Small and slim package making it easy to make 2SD1805-applied sets smaller
Specifications
Absolute Maximum Ratings
Parameter
at Ta=25°C
Symbol
Conditions
Ratings
Unit
V
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
V
CBO
60
20
6
V
CEO
V
V
EBO
V
I
C
5
A
Collector Current (Pulse)
I
CP
8
A
1
W
W
Collector Dissipation
P
C
Tc=25 C
15
150
°
Junction Temperature
Storage Temperature
Tj
C
C
°
°
Tstg
--55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
unit : mm (typ)
unit : mm (typ)
Package Dimensions
Package Dimensions
7518-003
7003-003
2.3
0.5
6.5
5.0
6.5
5.0
4
2.3
0.5
2SD1805F-E
2SD1805G-E
2SD1805F-TL-E
2SD1805G-TL-E
4
0.5
0.85
0.85
0.7
1.2
0.5
1
2
3
0.6
0 to 0.2
1.2
0.6
1 : Base
1 : Base
2 : Collector
3 : Emitter
4 : Collector
2 : Collector
3 : Emitter
4 : Collector
1
2
3
2.3
2.3
TP-FA
2.3
2.3
TP
Product & Package Information
• Package : TP
• Package : TP-FA
•
•
JEITA, JEDEC : SC-64, TO-251
500 pcs./bag
•
•
JEITA, JEDEC : SC-63, TO-252
Minimum Packing Quantity : 700 pcs./reel
Minimum Packing Quantity
:
2,4
Marking
Packing Type (TP-FA) : TL
Electrical Connection
(TP, TP-FA)
D1805
1
RANK
LOT No.
TL
3
Semiconductor Components Industries, LLC, 2013
September, 2013
60612 TKIM TA-4167/22599TH (KT)/8309MO/5277KI/O236KI, TS No.2115-1/9
2SD1805
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
100
Collector Cutoff Current
Emitter Cutoff Current
I
V
=50V, I =0A
nA
nA
CBO
CB
E
I
V
EB
=5V, I =0A
100
EBO
C
h
h
1
2
V
=2V, I =500mA
120*
560*
FE
FE
CE
C
DC Current Gain
V
CE
=2V, I =3A
95
C
Gain-Bandwidth Product
Output Capacitance
f
V
=10V, I =50mA
120
45
MHz
pF
mV
V
T
CE C
Cob
V
CB
=10V, f=1MHz
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
V
(sat)
(sat)
I
C
=3A, I =60mA
220
500
1.5
CE
B
V
I =3A, I =60mA
C B
BE
V
I
C
=10 A, I =0A
60
20
6
V
μ
(BR)CBO
E
V
I
C
=1mA, R
=
V
∞
(BR)CEO
BE
V
I =10 A, I =0A
E
V
μ
(BR)EBO
C
t
t
t
30
300
40
ns
on
Storage Time
See specified Test Circuit
ns
stg
f
Fall Time
ns
* : The 2SD1805 is classified by 500mA h as follows.
FE
Rank
E
F
G
h
120 to 200
160 to 320
280 to 560
FE
Switching Time Test Circuit
I
B1
PW=20μs
D.C.≤1%
OUTPUT
I
B2
INPUT
R
B
V
R
R
L
+
+
100μF
470μF
V
BE
V
CC
I =10I = --10I =2A, V =10V
C B1 B2 CC
Ordering Information
Device
Package
TP
Shipping
memo
2SD1805F-E
500pcs./bag
500pcs./bag
700pcs./reel
700pcs./reel
2SD1805G-E
TP
Pb Free
2SD1805F-TL-E
2SD1805G-TL-E
TP-FA
TP-FA
No.2115-2/9
2SD1805
I
-- V
I
-- V
C CE
C
CE
5
4
3
2
5
4
3
2
15mA
10mA
5mA
5mA
1
0
1
0
I =0
B
I =0
B
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1.0
-- V
ITR10036
CE
Collector-to-Emitter Voltage, V
-- V
Collector-to-Emitter Voltage, V
ITR10035
CE
I
-- V
h
FE
-- I
C
BE
C
6
5
4
3
2
1000
V
=2V
CE
V
=2V
CE
7
5
3
2
100
7
5
1
0
3
2
0
0.2
0.4
0.6
0.8
1.0
1.2
5
2
3
5
2
3
5
2
3
5
0.01
0.1
1.0
10
Base-to-Emitter Voltage, V
BE
-- V
Collector Current, I -- A
C
ITR10038
ITR10037
Cob -- V
f
T
-- I
CB
C
1000
2
V =10V
CE
f=1MHz
7
5
100
3
2
7
5
100
7
5
3
2
3
2
10
10
1.0
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
10
100
1000
ITR10039
10
100
ITR10040
Collector-to-Base Voltage, V
CB
-- V
Collector Current, I -- mA
C
V
BE
(sat) -- I
C
V
(sat) -- I
CE
C
1000
10
I
/ I =50
B
I
/ I =50
B
C
C
7
7
5
5
3
2
3
2
100
7
5
1.0
7
5
3
2
3
2
10
5
2
3
5
2
3
5
2
3
5
5
2
3
5
2
3
5
2
3
5
0.01
0.1
1.0
10
0.01
0.1
1.0
10
Collector Current, I -- A
ITR10041
ITR10042
Collector Current, I -- A
C
C
No.2115-3/9
2SD1805
P
-- Ta
A S O
C
16
15
14
2
I
10
CP
7
5
I
C
12
10
8
3
2
1.0
7
5
6
3
2
4
0.1
7
5
2
Tc=25°C
Single pulse
1
0
3
0.1
2
3
5
7
2
3
5
7
2
3
0
20
40
60
80
100
120
140
160
1.0
10
Ambient Temperature, Ta -- °C
ITR10043
ITR10044
Collector-to-Emitter Voltage, V
-- V
CE
No.2115-4/9
2SD1805
Taping Specification
2SD1805F-TL-E, 2SD1805G-TL-E
No.2115-5/9
2SD1805
Outline Drawing
Land Pattern Example
2SD1805F-TL-E, 2SD1805G-TL-E
Mass (g) Unit
Unit: mm
0.282
mm
* For reference
7.0
1.5
2.3
2.3
No.2115-6/9
2SD1805
Bag Packing Specification
2SD1805F-E, 2SD1805G-E
No.2115-7/9
2SD1805
Outline Drawing
2SD1805F-E, 2SD1805G-E
Mass (g) Unit
0.315
mm
* For reference
No.2115-8/9
2SD1805
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the
part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PS No.2115-9/9
相关型号：
2SD1809
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE
ROHM
2SD1809T103
Small Signal Bipolar Transistor, 1A I(C), 1-Element, NPN, Silicon, TO-92, TO-92L, 3 PIN
ROHM
2SD1812
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE
ROHM
2SD1812/N
Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92L, 3 PIN
ROHM
2SD1812/NP
Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92L, 3 PIN
ROHM
©2020 ICPDF网 联系我们和版权申明