2SD1119-R [KEXIN]
NPN Transistors;型号: | 2SD1119-R |
厂家: | GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
描述: | NPN Transistors |
文件: | 总1页 (文件大小:391K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Transistors
2SD1119
1.70 0.1
■ Features
● Collector Current Capability IC=3 A
● Collector Emitter Voltage VCEO=25 V
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
Unit
V
VCBO
VCEO
VEBO
40
25
7
3
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
I
C
A
P
C
500
mW
T
J
150
℃
Storage Temperature Range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Ic= 100 uA, I = 0
Ic= 1 mA, I = 0
= 100 uA, I
Min
40
25
7
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
E
B
I
E
C
= 0
I
CBO
EBO
V
V
CB= 40 V , I
EB= 7V , I
E
= 0
0.1
0.1
1
uA
V
I
C
=0
Collector-emitter saturation voltage
Base - emitter saturation voltage
V
CE(sat)
BE(sat)
I
I
C
=3 A, I
B
=100 mA
=100 mA
V
C=3 A, I
B
1.2
600
V
V
V
V
CE= 2V, I
CE= 2V, I
C
= 500mA
= 2 A
230
150
DC current gain
hFE
C
Collector output capacitance
Transition frequency
Cob
CB= 20V, I
E= 0,f=1MHz
50
pF
f
T
CE= 6V, I = 50 mA,f=200MHz
C
150
MHz
■ Classification of hfe(1)
Type
Range
Marking
2SD1119-Q
230-380
TQ
2SD1119-R
340-600
TR
1
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