2SC4684 [KEXIN]

Silicon NPN Epitaxial; NPN硅外延


型号：	2SC4684
厂家：	GUANGDONG KEXIN INDUSTRIAL CO.,LTD
描述：	Silicon NPN Epitaxial NPN硅外延
文件：	总1页 (文件大小：40K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SMD Type

Transistors

Silicon NPN Epitaxial

2SC4684

TO-252

Unit: mm

6.50^+0.15

-0.15

2.30^+0.1

-0.1

5.30^+0.2

0.50^+0.8

-0.7

-0.2

Features

High DC current gain.

Low collector saturation voltage.

High power dissipation.

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

V^CBO

V^CEO

V^CES

V^EBO

I^C

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector current pulse *

Base current

I^CP

0.5

I^B

1.0

Collector power dissipation

T^a= 25

T^c= 25

P^C

Junction temperature

Storage temperature

T^j

150

Tstg

-55 to +150

* Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)

Electrical Characteristics Ta = 25

Parameter

Symbol

I^CBO

Testconditons

Min

Typ

Max

100

Unit

Collector cut-off current

Emitter cut-off current

VCB = 50 V, IE = 0

VEB = 8 V, IC = 0

I^EBO

Collector-emitter breakdown voltage

V^CEO

IC = 10 mA, IB = 0

V^CE= 2 V, IC = 0.5 A

V^CE= 2 V, IC = 4 A

800

250

3200

DC current gain

h^FE

Collector-emitter saturation voltage

Base-emitter voltage

V^{CE (sat)}IC = 4 A, IB = 40 mA

0.5

1.2

V^BE

f^T

VCE = 2 V, IC = 4 A

VCE = 2 V, IC = 0.5 A

Transition frequency

150

MHz

Collector output capacitance

C^ob

VCB = 10 V, IE = 0, f = 1 MHz

Marking

C4684

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