2SC4684(2-7B1A) [TOSHIBA]

TRANSISTOR 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7B1A, 3 PIN, BIP General Purpose Small Signal;
2SC4684(2-7B1A)
型号: 2SC4684(2-7B1A)
厂家: TOSHIBA    TOSHIBA
描述:

TRANSISTOR 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7B1A, 3 PIN, BIP General Purpose Small Signal

放大器 晶体管
文件: 总4页 (文件大小:144K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2SC4684  
TOSHIBA Transistor Silicon NPN Epitaxial Type  
2SC4684  
Strobe Flash Applications  
Unit: mm  
Medium Power Amplifier Applications  
High DC current gain  
: h  
= 800 to 3200 (V  
= 2 V, I = 0.5 A)  
C
FE (1)  
FE (2)  
CE  
: h  
= 250 (V  
= 2 V, I = 4 A)  
CE  
C
Low collector saturation voltage  
: V = 0.5 V (max) (I = 4 A, I = 40 mA)  
CE (sat)  
High power dissipation  
C
B
: P = 10 W (Tc = 25°C), P = 1.0 W (Ta = 25°C)  
C
C
Maximum Ratings  
(Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
V
Collector-base voltage  
V
50  
40  
20  
8
CBO  
V
CES  
CEO  
EBO  
Collector-emitter voltage  
Emitter-base voltage  
V
V
V
V
JEDEC  
JEITA  
DC  
I
5
C
Collector current  
Base current  
A
Pulse  
I
8
TOSHIBA  
2-7B1A  
CP  
(Note)  
Weight: 0.36 g (typ.)  
I
0.5  
1.0  
A
B
Ta = 25°C  
Tc = 25°C  
Collector power  
dissipation  
P
W
C
10  
Junction temperature  
T
150  
°C  
°C  
j
Storage temperature range  
T
stg  
55 to 150  
Note: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)  
JEDEC  
JEITA  
TOSHIBA  
2-7J1A  
Weight: 0.36 g (typ.)  
1
2004-07-26  
2SC4684  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 50 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
I
I
V
V
100  
100  
nA  
nA  
V
CBO  
CB  
E
Emitter cut-off current  
= 8 V, I = 0  
C
EBO  
EB  
Collector-emitter breakdown voltage  
V
I
C
= 10 mA, I = 0  
20  
800  
250  
CEO  
B
h
h
V
CE  
V
CE  
= 2 V, I = 0.5 A  
3200  
FE (1)  
FE (2)  
C
DC current gain  
= 2 V, I = 4 A  
C
Collector-emitter saturation voltage  
Base-emitter voltage  
V
I
C
= 4 A, I = 40 mA  
0.5  
1.2  
V
V
CE (sat)  
B
V
BE  
V
CE  
V
CE  
V
CB  
= 2 V, I = 4 A  
C
Transition frequency  
f
= 2 V, I = 0.5 A  
150  
45  
MHz  
pF  
T
C
Collector output capacitance  
C
ob  
= 10 V, I = 0, f = 1 MHz  
E
Marking  
C4684  
Part No. (or abbreviation code)  
Lot No.  
A line indicates  
lead (Pb)-free package or  
lead (Pb)-free finish.  
2
2004-07-26  
2SC4684  
I
– V  
I – V  
C BE  
C
CE  
10  
8
10  
8
Common emitter  
Tc = 25°C  
Common emitter  
= 2 V  
V
CE  
50 40  
30  
20  
10  
6
6
5
2
Tc = 125°C  
4
4
25  
40  
2
2
I
B
= 0.5 mA  
0
0
0
0
1
2
3
4
5
6
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
Collector-emitter voltage  
V
(V)  
Base-emitter voltage  
V
BE  
(V)  
CE  
h
FE  
– I  
C
V
– I  
CE (sat) C  
10000  
10  
3
Common emitter  
Tc = 125°C  
I
C
/I = 200  
B
3000  
1000  
1
25  
40  
0.3  
0.1  
300  
100  
Tc = 125°C  
25  
30  
10  
0.03  
0.01  
Common emitter  
= 2 V  
40  
V
CE  
0.01  
0.03  
0.1  
0.3  
1
3
10  
0.01  
0.03  
0.1  
0.3  
1
3
10  
Collector current  
I
C
(A)  
Collector current  
I
(A)  
C
Safe Operating Area  
V
– I  
C
BE (sat)  
10  
I
C
max (pulsed)**  
10  
3
1 ms*  
Common emitter  
10 ms*  
100 ms*  
I
C
max (continuous)  
5
3
I
C
/I = 200  
B
Tc = 40°C  
1
DC operation  
Tc = 25°C  
1
0.3  
0.1  
25  
125  
0.5  
0.3  
*: Single nonrepetitive pulse  
Tc = 25°C  
**: Pulse width = 10 ms (max)  
Duty cycle = 30(max)  
Curves must be derated linearly with  
increase in temperature.  
0.03  
0.01  
V
max  
CEO  
0.1  
0.01  
0.03  
0.1  
0.3  
1
3
10  
0.3  
1
3
10  
30  
Collector current  
I
C
(A)  
Collector-emitter voltage  
V
(V)  
CE  
3
2004-07-26  
2SC4684  
RESTRICTIONS ON PRODUCT USE  
030619EAA  
The information contained herein is subject to change without notice.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of  
TOSHIBA or others.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced  
and sold, under any law and regulations.  
4
2004-07-26  

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