2SC4666 [KEXIN]

Silicon NPN Epitaxial; NPN硅外延


型号：	2SC4666
厂家：	GUANGDONG KEXIN INDUSTRIAL CO.,LTD
描述：	Silicon NPN Epitaxial NPN硅外延晶体晶体管开关光电二极管
文件：	总1页 (文件大小：46K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SMD Type

TransistIoCrs

Silicon NPN Epitaxial

2SC4666

Features

High hFE: hFE = 600 3600

High voltage: VCEO = 50 V

High collector current: IC = 150 mA (max)

Small package

1 Emitter

2 Base

3 Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

150

Base current

I^B

Collector power dissipation

Junction temperature

Storage temperature

P^C

100

T^j

125

Tstg

-55 to +125

Electrical Characteristics Ta = 25

Parameter

Symbol

I^CBO

Testconditons

Min

Typ

Max

0.1

Unit

ìA

Collector cut-off current

Emitter cut-off current

DC current gain

VCB = 50 V, IE = 0

VEB = 5 V, IC = 0

I^EBO

0.1

ìA

h^FE

VCE = 6 V, IC = 2 mA

600

100

3600

Collector-emitter saturation voltage

Transition frequency

V^{CE (sat)}IC = 100 mA, IB = 10 mA

0.12 0.25

250

f^T

VCE = 10 V, IC = 10 mA

MHz

Collector output capacitance

C^ob

VCB = 10 V, IE = 0, f = 1 MHz

3.5

V^CE= 6 V, IC = 0.1 mA, f = 100 Hz,Rg =

10 kÙ

NF(1)

NF(2)

0.5

0.3

Noise figure

V^CE= 6 V, IC = 0.1 mA, f = 1 kHz,Rg =

10 kÙ

hFE Classification

Marking

Rank

hFE

600 1800

1200 3600

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相关型号：

2SC4666A

TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SC-70

ETC