2SC3650 [KEXIN]

NPN Epitaxial Planar Silicon Transistor; NPN外延平面硅晶体管

2SC3650


型号：	2SC3650
厂家：	GUANGDONG KEXIN INDUSTRIAL CO.,LTD
描述：	NPN Epitaxial Planar Silicon Transistor NPN外延平面硅晶体管晶体晶体管放大器
文件：	总1页 (文件大小：51K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SMD Type

Transistors

NPN Epitaxial Planar Silicon Transistor

2SC3650

Features

High DC current gain (hFE=800 to 3200).

Low collector-to-emitter saturation voltage

(V^CE(sat)0.5V).

Large current capacity (IC=1.2V).

Very small size making it easy to provide highdensity,

small-sized hybrid IC’s.

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

V

30

25

V

15

V

1.2

2

A

Collector current (pulse)

Collector dissipation

I^cp

A

P^C

500

mW

Junction temperature

Storage temperature

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

I^CBO

Testconditons

VCB=20V, IE=0

Min

Typ

Max

0.1

Unit

ìA

Collector cutoff current

Emitter cutoff current

I^EBO

h^FE

f^T

VEB=10V, IC=0

0.1

ìA

DC current gain

VCE=5V, IC=500mA

VCE=10V, IC=50mA

VCB=10V, f=1MHz

800 1500 3200

Gain bandwidth product

220

17

MHz

pF

V

Output capacitance

C^ob

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

V^CE(sat)IC=500mA, IB=10mA

V^BE(sat)IC=500mA, IB=10mA

V^(BR)CBOIC=10ìA, IE=0

0.12

0.85

0.5

1.2

V

30

25

15

V

V^(BR)CEO

V

IC=1mA, RBE=

V^(BR)EBOIE=10ìA, IC=0

V

Marking

Marking

CF

1

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