2SC3650(SOT-89-3L) [JCST]
Transistor;
| 型号： | 2SC3650(SOT-89-3L) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：178K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89-3L
2SC3650 TRANSISTOR (NPN)
1. BASE
FEATURES
2. COLLECTOR
3. EMITTER
Small Flat Package
High DC Current Gain
Low VCE(sat)
Large Current Capacity
APPLICATIONS
LF Amplifiers, Various Drivers, Muting Circuit
MARKING:CF
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
30
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
25
V
15
V
Collector Current
1.2
A
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
500
mW
℃/W
℃
PC
250
RθJA
Tj
150
Storage Temperature
-55~+150
Tstg
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
IC=10µA,IE=0
Min
30
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC=1mA,IB=0
25
V
IE=10µA,IC=0
15
V
VCB=20V,IE=0
0.1
0.1
µA
µA
IEBO
VEB=10V,IC=0
Emitter cut-off current
hFE(1)
VCE=5V, IC=500mA
VCE=5V, IC=10mA
IC=500mA,IB=10mA
IC=500mA,IB=10mA
VCE=10V,IC=50mA
VCB=10V, IE=0, f=1MHz
800
600
3200
DC current gain
hFE(2)
VCE(sat)
VBE(sat)
fT
0.5
1.2
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
220
17
MHz
pF
Cob
Collector output capacitance
A,Nov,2010
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