2SC2882-O [KEXIN]
NPN Transistors;
| 型号： | 2SC2882-O |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Transistors |
| 文件： | 总2页 (文件大小：992K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Transistors
2SC2882
1.70 0.1
■ Features
● Suitable for driver of 30 to 35 watts audio amplifier
● Small flat package
● PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
0.42 0.1
0.46 0.1
● Complementary to 2SA1202
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
BaseCurrent
Symbol
Rating
Unit
VCBO
VCEO
VEBO
80
80
V
5
I
C
400
mA
mW
℃
IB
80
Collector Power Dissipation
(Note.1)
500
P
C
1000
150
Junction Temperature
Storage Temperature Range
TJ
Tstg
-55 to 150
Note.1:Mounted on a ceramic substrate (250 mm2 × 0.8 t)
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Ic= 1mA， I = 0
Ic= 10mA， I
= 1mA， I
CB= 80V , I
EB= 5V , I =0
Min
80
80
5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
E
B
= 0
I
E
C
= 0
I
CBO
EBO
V
V
E
= 0
0.1
0.1
0.4
1.2
0.8
240
uA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
V
CE(sat)
BE(sat)
I
I
C
=200 mA, I
B
B
=20mA
=20mA
V
C=200 mA, I
V
BE
V
V
V
CE= 2V, I
CE= 2V, I
CE= 2V, I
C
C
C
= 5mA
0.55
70
h
FE(1)
FE(2)
= 50mA
= 200mA
DC current gain
h
40
Collector output capacitance
Transition frequency
C
ob
V
V
CB= 10V, I
CE= 10V, I
E
= 0,f=1MHz
= 10mA
10
pF
fT
C
100
MHz
■ Classification of hfe(1)
Type
Range
Marking
2SC2882-O
70-140
EO*
2SC2882-Y
120-240
EY*
1
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SMD Type
Transistors
NPN Transistors
2SC2882
■ Typical Characterisitics
I
– V
h
– I
FE C
C
CE
400
300
200
100
0
1000
Common emitter
= 2 V
Common emitter
5
500
V
CE
Ta = 25°C
3
2
300
Ta = 100°C
25
−25
100
1
50
I
= 0.5 mA
30
B
0
10
1
0
2
4
6
8
10
3
10
30
100
(mA)
300
Collector-emitter voltage
V
CE
(V)
Collector current I
C
V
– I
I – V
C BE
CE (sat)
C
1
500
400
Common emitter
/I = 10
Common emitter
I
C B
V
= 2 V
CE
0.5
0.3
300
200
Ta = 100°C 25
−25
0.1
Ta = 100°C
0.05
0.03
25
100
0
−25
1
3
10
30
100
(mA)
300
0
0.2
0.4
0.6
0.8
1.0
1.2
Collector current
I
C
Base-emitter voltage
V
BE
(V)
Safe Operating Area
2000
1000
I
max (pulse)*
C
P
– Ta
C
I
max (continuous)
500
300
1.2
1.0
0.8
0.6
0.4
0.2
0
C
1 ms*
(1) Mounted on a ceramic
substrate (250 mm2 × 0.8 t)
(2) No heat sink
10 ms*
(1)
(2)
100 ms*
100
50
30
DC operation Ta = 25°C
10
*: Single nonrepetitive pulse
Ta = 25°C
5
3
Curves must be derated linearly
with increase in temperature.
Tested without a substrate.
V
max
300
CEO
1
0.5
1
3
10
30
100
0
20
40
60
80
100
120
140
160
Collector-emitter voltage
V
CE
(V)
Ambient temperature Ta (°C)
2
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