1SV269 [KEXIN]
Silicon Epitaxial Planar Diode; 硅外延平面二极管型号: | 1SV269 |
厂家: | GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
描述: | Silicon Epitaxial Planar Diode |
文件: | 总1页 (文件大小:34K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SMD Type
Diodes
Silicon Epitaxial Planar Diode
1SV269
SOD-323
Unit: mm
+0.1
1.7
-0.1
+0.05
0.85
-0.05
Features
+0.1
2.6
-0.1
High Capacitance Ratio:C2V/C25V = 11.5(Typ.)
Low Series Resistance:rs = 0.55 (Typ.)
1.0max
0.475
0.375
Excellent C-V Characteristics,and Small Tracking Error.
Absolute Maximum Ratings Ta = 25
Parameter
Reverse Voltage
Symbol
VR
Value
34
Unit
V
Peak Reverse Voltage
Junction Temperature
Storage Temperature Range
VRM
Tj
V
36(RL = 10 K
125
)
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Reverse Voltage
Symbol
VR
Conditions
Min
34
Typ
Max
Unit
V
IR = 1
A
Reverse Current
Capacitance
IR
VR = 32 V
10
34
nA
C2V
f = 1 MHz;VR = 2 V
f = 1 MHz;VR = 25 V
33
2.5
11
31.5
2.75
11.5
1.05
0.55
pF
C25V
2.9
C2V/C25V
C25V/C28V
rs
Capacitance Ratio
1.03
Series Resistance
Note :
VR = 5V, f = 470 MHz
0.7
Available in matched group for capacitance to 2.0%.
C(Max.)-C(Min.)
0.020
C(Min.)
(VR=2~25V)
Marking
Marking
TE
1
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