1SV270 [KEXIN]
Silicon Epitaxial Planar Diode; 硅外延平面二极管型号: | 1SV270 |
厂家: | GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
描述: | Silicon Epitaxial Planar Diode |
文件: | 总1页 (文件大小:32K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SMD Type
Diodes
Silicon Epitaxial Planar Diode
1SV270
SOD-323
Unit: mm
+0.1
1.7
-0.1
+0.05
0.85
-0.05
Features
+0.1
2.6
-0.1
High Capacitance Ratio:C1V/C4V = 2.0(Typ.)
Low Series Resistance:rs = 0.28 (Typ.)
1.0max
0.475
0.375
Absolute Maximum Ratings Ta = 25
Parameter
Reverse Voltage
Symbol
VR
Value
10
Unit
V
Junction Temperature
Tj
125
Storage Temperature Range
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Reverse Voltage
Symbol
VR
Conditions
Min
Typ
Max
Unit
V
10
IR = 1
A
Reverse Current
Capacitance
IR
VR = 10 V
3
nA
C1V
f = 1 MHz;VR = 1 V
f = 1 MHz;VR = 4 V
15
7.8
1.3
16
8
17
8.7
pF
C4V
Capacitance Ratio
Series Resistance
C1V/C4V
rs
2
VR = 1V, f = 470 MHz
0.28
0.5
Marking
Marking
TF
1
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相关型号:
1SV272
Small interterminal capacitance (C=0.6pF typ). Small forward series resistance (rs=0.5 typ).
TYSEMI
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