MBR1045PBF [KERSEMI]
Schottky Rectifier, 10 A; 肖特基整流器， 10 A
| 型号： | MBR1045PBF |
| 厂家： | 
Kersemi Electronic Co., Ltd. |
| 描述： | Schottky Rectifier, 10 A |
| 文件： | 总5页 (文件大小：1907K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR10..PbF Series
Schottky Rectifier, 10 A
FEATURES
• 150 °C TJ operation
• TO-220 and D2PAK packages
• High frequency operation
• Low forward voltage drop
• High purity, high
Base
Pb-free
cathode
Available
2
RoHS*
COMPLIANT
temperature
epoxy
encapsulation for enhanced mechanical strength and
moisture resistance
1
3
TO-220AC
• Guard ring for enhanced ruggedness and long term
reliability
Cathode Anode
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for industrial level
PRODUCT SUMMARY
DESCRIPTION
IF(AV)
10 A
35/45 V
This Schottky rectifier has been optimized for low reverse
leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C junction
temperature. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
VR
IRM
15 mA at 125 °C
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
IFRM
CHARACTERISTICS
VALUES
10
UNITS
Rectangular waveform
TC = 135 °C
A
20
VRRM
IFSM
35/45
1060
V
A
tp = 5 µs sine
10 Apk, TJ = 125 °C
Range
VF
0.57
V
TJ
- 65 to 150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
MBR1035PbF
MBR1045PbF
UNITS
Maximum DC reverse voltage
VR
35
45
V
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
IF(AV)
IFRM
TEST CONDITIONS
TC = 135 °C, rated VR
Rated VR, square wave, 20 kHz, TC = 135 °C
Following any rated load condition
and with rated VRRM applied
VALUES UNITS
Maximum average forward current
Peak repetitive forward current
10
A
20
5 µs sine or 3 µs rect. pulse
1060
A
Non-repetitive peak surge current
IFSM
Surge applied at rated load conditions halfwave,
single phase, 60 Hz
150
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
TJ = 25 °C, IAS = 2 A, L = 4 mH
8
2
mJ
A
Current decaying linearly to zero in 1 µs
Frequency limited by TJ maximum VA = 1.5 x VR typical
www.kersemi.com
1
MBR10..PbF Series
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
0.84
0.57
0.72
0.1
UNITS
20 A
TJ = 25 °C
(1)
Maximum forward voltage drop
VFM
10 A
V
TJ = 125 °C
20 A
TJ = 25 °C
TJ = 125 °C
(1)
Maximum instantaneous reverse current
IRM
Rated DC voltage
mA
15
Threshold voltage
VF(TO)
rt
0.354
17.6
600
V
TJ = TJ maximum
Forward slope resistance
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
mΩ
pF
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured from top of terminal to mounting plane
Rated VR
LS
8.0
nH
dV/dt
10 000
V/µs
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
- 65 to 150
- 65 to 175
UNITS
Maximum junction temperature range
Maximum storage temperature range
TJ
°C
TStg
Maximum thermal resistance,
junction to case
RthJC
RthCS
DC operation
2.0
°C/W
Typical thermal resistance,
case to heatsink
Mounting surface, smooth and greased
(only for TO-220)
0.50
2
g
Approximate weight
0.07
oz.
minimum
maximum
6 (5)
12 (10)
kgf · cm
(lbf · in)
Mounting torque
Marking device
Case style TO-220AC
MBR1045
www.kersemi.com
2
MBR10..PbF Series
100
10
1
100
10
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
1
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
0.1
0.01
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
0.001
0.0001
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0
5
10 15 20 25 30 35 40 45
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
TJ = 25 °C
100
10
20
30
40
50
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
D = 0.75
D = 0.50
D = 0.33
D = 0.25
t1
t2
0.1
Notes:
D = 0.20
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
.
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
0.01
0.1
1.0 10
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
www.kersemi.com
3
MBR10..PbF Series
150
145
140
10
8
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
6
RMS limit
Square wave (D = 0.50)
135
Rated VR applied
4
130
2
DC
125
See note (1)
120
0
0
3
6
9
12
15
0
2
4
6
8
10
12
14
16
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
1000
At any rated load condition and
with rated VRRM applied
following surge
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
www.kersemi.com
4
MBR10..PbF Series
ORDERING INFORMATION TABLE
Device code
MBR 10
45 PbF
1
2
3
4
1
2
3
4
-
-
-
-
Schottky MBR series
Currrent rating (10 = 10 A)
Voltage ratings
35 = 35 V
45 = 45 V
None = Standard production
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95221
Part marking information
SPICE model
http://www.vishay.com/doc?95216
http://www.vishay.com/doc?95293
www.kersemi.com
5
相关型号：
MBR1045ULPS-TP
Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 45V V(RRM), Silicon, TO-277B, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC
MBR1050
肖特基势垒二极管Schottky Barrier Diodes，高结温低漏电流肖特基势垒二极管High Tjm Low IRRM Schottky Barrier Diodes，Tj = -65°C ~ 175°C, Tjm = 175°C。
SIRECTIFIER
©2020 ICPDF网 联系我们和版权申明