MBR1050 [SIRECTIFIER]
肖特基势垒二极管Schottky Barrier Diodes，高结温低漏电流肖特基势垒二极管High Tjm Low IRRM Schottky Barrier Diodes，Tj = -65°C ~ 175°C, Tjm = 175°C。; 肖特基势垒二极管肖特基势垒二极管，高结温低漏电流肖特基势垒二极管高TJM低IRRM肖特基势垒二极管， TJ = -65 ° C〜 175 ° C， TJM = 175 ℃。
| 型号： | MBR1050 |
| 厂家： | 
SIRECTIFIER SEMICONDUCTORS |
| 描述： | 肖特基势垒二极管Schottky Barrier Diodes，高结温低漏电流肖特基势垒二极管High Tjm Low IRRM Schottky Barrier Diodes，Tj = -65°C ~ 175°C, Tjm = 175°C。 |
| 文件： | 总2页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR1050 thru MBR1060
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
Dimensions TO-220AC
Dim.
Inches
Min. Max.
Milimeter
Min. Max.
A
C
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
12.70 14.73
14.23 16.51
9.66 10.66
A
C
C(TAB)
3.54
5.85
2.54
1.15
-
4.08
6.85
3.42
1.77
6.35
0.89
5.33
4.82
0.56
2.49
1.39
A=Anode, C=Cathode, TAB=Cathode
-
0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
0.64
4.83
3.56
0.38
2.04
0.64
VRRM
V
VRMS
V
VDC
V
MBR1050
MBR1060
50
35
50
60
60
42
Symbol
Characteristics
Maximum Ratings
Unit
I(AV)
IFSM
dv/dt
VF
Maximum Average Forward Rectified Current @TC=125oC
10
A
A
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
150
Voltage Rate Of Change (Rated VR)
10000
V/us
V
IF=20A @TJ=25oC
Maximum Forward
0.95
0.70
IF=20A @TJ=125oC
Voltage
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25oC
0.1
25
IR
mA
@TJ=125oC
2.5
oC/W
pF
oC
ROJC
CJ
Typical Thermal Resistance (Note 1)
Typical Junction Capacitance (Note 2)
Operating Temperature Range
Storage Temperature Range
400
-55 to +150
-55 to +175
TJ
TSTG
oC
NOTES: 1. Thermal Resistance Junction To Case.
2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
FEATURES
MECHANICAL DATA
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* Case: TO-220AC molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
MBR1050 thru MBR1060
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
10
8
150
125
100
75
6
4
50
RESISTIVE OR
INDUCTIVE LOAD
2
0
25
0
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
25
20
NUMBER OF CYCLES AT 60Hz
50
75
100
125
150
175
1
2
5
10
50
100
CASE TEMPERATURE , C
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
100
10
J
T = 100 C
10
1.0
J
T = 75 C
0.1
1.0
0.1
J
T = 25 C
0.01
J
T = 25 C
PULSE WIDTH 300us
2% Duty cycle
0.001
140
20
40
60
80
100
120
0
0.8
0.9
0.1 0.2
0.3
0.4
0.5
0.6
0.7
1.0
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
INSTANTANEOUS FORWARD VOLTAGE , (VOLTS)
FIG.5 - TYPICAL JUNCTION CAPACITANCE
10000
1000
J
T = 25 C, f= 1MHz
100
0.1
1
REVERSE VOLTAGE , VOLTS
100
4
10
相关型号：
MBR1050CT
肖特基势垒二极管Schottky Barrier Diodes，高结温低漏电流肖特基势垒二极管High Tjm Low IRRM Schottky Barrier Diodes，Tj = -65°C ~ 175°C, Tjm = 175°C。
SIRECTIFIER
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