IRFR6215TRL [KERSEMI]
AUTOMOTIVE GRADE; 汽车级
| 型号： | IRFR6215TRL |
| 厂家： | 
Kersemi Electronic Co., Ltd. |
| 描述： | AUTOMOTIVE GRADE |
| 文件： | 总10页 (文件大小：3885K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-96302
AUTOMOTIVE GRADE
AUIRFR6215
HEXFET® Power MOSFET
Features
O
O
O
O
O
O
O
O
O
P-Channel
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
D
V(BR)DSS
-150V
0.295
-13A
RDS(on) max.
ID
G
Fully Avalanche Rated
S
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
Description
Specifically designed for Automotive applications of
HEXFET® Power MOSFETs utilizes the latest processing
techniques to achieve low on-resistance per silicon area.
This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and a
wide variety of other applications.
S
D
G
D-Pak
AUIRFR6215
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Continuous Drain Current, VGS @ 10V
Max.
-13
Units
ID @ TC = 25°C
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
-9.0
A
IDM
-44
Pulsed Drain Current
PD @TC = 25°C
110
Maximum Power Dissipation
Linear Derating Factor
W
W/°C
V
0.71
VGS
EAS
IAR
± 20
310
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally limited)
Avalanche Current
mJ
A
-6.6
EAR
dv/dt
TJ
11
Repetitive Avalanche Energy
Peak Diode Recovery
mJ
V/ns
5.0
-55 to + 175
Operating Junction and
TSTG
°C
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Thermal Resistance
Parameter
Junction-to-Case
Typ.
Max.
1.4
Units
RθJC
RθJA
RθJA
–––
–––
–––
Junction-to-Ambient(PCB mount)
Junction-to-Ambient
50
°C/W
110
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1
04/13/10
AUIRFR6215
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
-150 ––– –––
––– -0.20 ––– V/°C Reference to 25°C, ID = -1mA
Conditions
VGS = 0V, ID = -250µA
V(BR)DSS
V
∆V(BR)DSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
–––
-2.0
3.6
––– 0.295
––– 0.58
VGS = -10V, ID = -6.6A
VGS = -10V, ID = -6.6A TJ = 150°C
VDS = VGS, ID = -250µA
VDS = -50V, ID = -6.6A
VDS = -150V, VGS = 0V
VDS = -120V, VGS = 0V, TJ = 150°C
VGS = 20V
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Ω
Gate Threshold Voltage
–––
–––
–––
-4.0
–––
-25
V
S
gfs
Forward Transconductance
Drain-to-Source Leakage Current
IDSS
–––
–––
–––
–––
µA
nA
––– -250
––– 100
––– -100
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Total Gate Charge
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
66
8.1
35
ID = -6.6A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC
V
DS =-120V
GS = -10V, See Fig 6 and 13
V
–––
–––
–––
–––
VDD = -75V
36
ID = -6.6A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
53
RG = 6.8Ω
37
RD = 12Ω, See Fig. 10
D
S
Between lead,
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
4.5
7.5
–––
–––
nH 6mm (0.25in.)
from package
G
and center of die contact
VGS = 0V
VDS = -25V
Ciss
Coss
Crss
Input Capacitance
–––
–––
–––
860
220
130
–––
–––
–––
Output Capacitance
pF
ƒ = 1.0MHz, See Fig.5
Reverse Transfer Capacitance
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
IS
Continuous Source Current
–––
–––
-13
(Body Diode)
showing the
integral reverse
A
G
ISM
Pulsed Source Current
–––
–––
-44
S
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
–––
–––
–––
–––
160
1.2
-1.6
240
1.7
V
TJ = 25°C, IS =-6.6A, VGS = 0V
TJ = 25°C, IF =-6.6A
di/dt = 100A/µs
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns
nC
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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AUIRFR6215
Qualification Information†
Automotive
††
(per AEC-Q101)
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer
Qualification Level
qualification level is granted by extension of the
higher Automotive level.
Moisture Sensitivity Level
MSL1
Class M4
D PAK
Machine Model
AEC-Q101-002
Class H3A
AEC-Q101-001
Class C5
Human Body Model
ESD
Charged Device Model
AEC-Q101-005
Yes
RoHS Compliant
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3
AUIRFR6215
100
100
10
1
VGS
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
TOP
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
TOP
BOTTOM - 4.5V
BOTTOM - 4.5V
10
-4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
= 25°C
-4.5V
T
c
T
C
= 175°C
A
1
A
1
10
100
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
100
I
= -11A
D
T = 25°C
J
TJ = 175°C
10
VDS = -50V
20µs PULSE WIDTH
V
= -10V
GS
1
A
10A
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
4
5
6
7
8
9
T , Junction Temperature (°C)
-VGS , Gate-to-Source Voltage (V)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
4
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AUIRFR6215
2000
1600
1200
800
400
0
20
16
12
8
V
C
C
C
= 0V,
f = 1MHz
I
= -6.6A
GS
iss
rss
oss
D
V
V
= -120V
= -75V
= -30V
= C + C
,
C
SHORTED
DS
gs
gd
gd
ds
= C
DS
= C + C
V
ds
gd
DS
C
iss
C
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 13
A
0
A
1
10
100
0
20
40
60
80
-V , Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10µs
T = 175°C
J
T = 25°C
J
100µs
1ms
T
T
J
= 25°C
= 175°C
C
Single Pulse
10ms
V
GS
= 0V
A
0.1
A
0.2
0.6
1.0
1.4
1.8
1
10
100
1000
-V , Drain-to-Source Voltage (V)
-V , Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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5
AUIRFR6215
RD
14
12
10
8
VDS
VGS
D.U.T.
RG
-
+
VDD
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig 10a. Switching Time Test Circuit
4
t
t
r
t
t
f
2
d(on)
d(off)
V
GS
10%
0
25
50
75
100
125
150
175
°
T , Case Temperature ( C)
C
90%
V
DS
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
t
0.02
0.01
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2
1
2. Peak T = P
J
x Z
+ T
thJC
C
DM
A
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRFR6215
800
600
400
200
0
L
I
V
D
DS
TOP
-2.7A
-4.7A
BOTTOM -6.6A
D.U.T
AS
R
G
V
DD
A
I
DRIVER
-20V
0.01
Ω
t
p
15V
Fig 12a. Unclamped Inductive Test Circuit
A
175
I
25
50
75
100
125
150
AS
Starting T , Junction Temperature (°C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
t
p
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
12V
.3µF
-10V
-
V
+
DS
Q
Q
GD
D.U.T.
GS
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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7
AUIRFR6215
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
8
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AUIRFR6215
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak Part Marking Information
Part Number
AURFR6215
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
IR Logo
YWWA
XX or XX
Lot Code
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9
AUIRFR6215
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
ꢀ This is applied for I-PAK, LS of D-PAK is measured between lead
and center of die contact
Uses IRF6215 data and test conditions
When mounted on 1" square PCB (FR-4 or G-10 Material ) For
recommended footprint and soldering techniques refer to
application note #AN-994
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 14mH RG = 25Ω, IAS = -6.6A. (See Fig.12)
ISD ≤-6.6A, di/dt ≤ -620A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%
R is measured at TJ approximately 90°C.
θ
10
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