FQPF8N60C [KERSEMI]
600V N-Channel MOSFET; 600V N沟道MOSFET
| 型号： | FQPF8N60C |
| 厂家： | 
Kersemi Electronic Co., Ltd. |
| 描述： | 600V N-Channel MOSFET |
| 文件： | 总9页 (文件大小：1122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FQP8N60C/FQPF8N60C
600V N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Corise Semiconductorÿs proprietary,
planar stripe, DMOS technology.
•
•
•
•
•
•
7.5A, 600V, R
= 1.2Ω @V = 10 V
DS(on) GS
Low gate charge ( typical 28 nC)
Low Crss ( typical 12 pF)
Fast switching
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
100% avalanche tested
Improved dv/dt capability
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
D
!
●
◀
▲
●
●
!
G
TO-220F
FQPF Series
TO-220
FQP Series
G D
S
G
D S
!
S
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
Parameter
FQP8N60C
FQPF8N60C
Units
V
V
I
Drain-Source Voltage
600
DSS
- Continuous (T = 25°C)
Drain Current
7.5
4.6
30
7.5 *
4.6 *
30 *
A
A
A
D
C
- Continuous (T = 100°C)
C
I
(Note 1)
Drain Current
- Pulsed
DM
V
E
I
E
dv/dt
P
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
± 30
230
7.5
14.7
4.5
V
mJ
A
mJ
V/ns
W
GSS
AS
(Note 2)
(Note 1)
(Note 1)
(Note 3)
AR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
AR
Power Dissipation (T = 25°C)
147
48
D
C
- Derate above 25°C
Operating and Storage Temperature Range
1.18
0.38
W/°C
°C
T , T
-55 to +150
300
J
STG
Maximum lead temperature for soldering purposes,
T
°C
L
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
FQP8N60C
FQPF8N60C
Units
°C/W
°C/W
°C/W
R
R
R
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
0.85
0.5
62.5
2.6
--
62.5
θJC
θCS
θJA
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
∆BV
/
V
I
= 0 V, I = 250 µA
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
600
--
--
--
--
V
DSS
GS
D
DSS
∆T
= 250 µA, Referenced to 25°C
0.7
V/°C
D
J
I
V
V
V
V
= 600 V, V = 0 V
--
--
--
--
--
--
--
--
1
10
100
-100
µA
µA
nA
nA
DSS
DS
GS
Zero Gate Voltage Drain Current
= 480 V, T = 125°C
DS
GS
GS
C
I
= 30 V, V = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
GSSF
GSSR
DS
I
= -30 V, V = 0 V
DS
On Characteristics
V
R
V
V
V
= V , I = 250 µA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
2.0
--
--
4.0
1.2
--
V
Ω
S
GS(th)
DS
GS
DS
GS
D
DS(on)
= 10 V, I = 3.75 A
1.0
8.7
D
g
= 40 V, I = 3.75 A
(Note 4)
Forward Transconductance
--
FS
D
Dynamic Characteristics
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
--
--
--
965
105
12
1255
135
16
pF
pF
pF
iss
V
= 25 V, V = 0 V,
GS
DS
oss
rss
f = 1.0 MHz
Switching Characteristics
t
t
t
t
Q
Q
Q
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
16.5
60.5
81
64.5
28
45
130
170
140
36
ns
ns
ns
d(on)
V
R
= 300 V, I = 7.5A,
= 25 Ω
DD
D
r
G
d(off)
f
(Note 4, 5)
(Note 4, 5)
ns
nC
nC
nC
g
V
V
= 480 V, I = 7.5A,
DS
GS
D
4.5
12
--
--
= 10 V
gs
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
I
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
--
365
3.4
7.5
30
1.4
--
A
A
V
ns
µC
S
SM
V
t
V
V
= 0 V, I = 7.5 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
SD
GS
S
= 0 V, I = 7.5 A,
rr
GS
S
dI / dt = 100 A/µs
(Note 4)
Q
Reverse Recovery Charge
--
F
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 7.3mH, I = 7.5 A, V = 50V, R = 25 Ω, Starting T = 25°C
AS
DD
G
DSS,
J
3. I ≤ 7.5A, di/dt ≤ 200A/µs, V ≤ BV
Starting T = 25°C
J
SD
DD
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
VGS
15.0 V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
Top:
101
100
101
100
150oC
Bottom: 5.0 V
25oC
-55oC
※
Notes :
※
Notes :
1. 250µ s Pulse Test
2. TC = 25
-1
1. VDS = 40V
10
2. 250µ s Pulse Test
℃
-1
10
2
4
6
8
10
-1
10
100
101
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1
10
VGS = 10V
0
10
VGS = 20V
※
Notes :
1. VGS = 0V
150
℃
25℃
2. 250µ s Pulse Test
※
Note : T = 25℃
J
-1
10
0
5
10
15
20
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
2000
1800
1600
1400
1200
1000
800
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = C + C
gd
C
rss = Cds
gd
VDS = 120V
VDS = 300V
C
iss
VDS = 480V
6
C
oss
4
※
Notes ;
600
1. VGS = 0 V
C
2. f = 1 MHz
rss
400
2
200
※
Note : ID = 8A
25
0
0
10
0
5
10
15
20
30
-1
0
1
10
10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
1.2
1.1
1.0
0.9
0.8
3.0
2.5
2.0
1.5
1.0
0.5
0.0
※
Notes :
※
Notes :
1. V = 0 V
2. IDG=S 250 µ A
1. V = 10 V
2. IDG=S 4 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T, Junction Temperature [oC]
T, Junction Temperature [oC]
J
J
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
2
10
Operation in This Area
is Limited by R DS(on)
Operation in This Area
is Limited by RDS(on)
2
10 µs
10
10 µs
100
1 ms
10 ms
µs
1
10
100 µs
1
10
1 ms
100 ms
10 ms
100 ms
DC
0
10
DC
0
10
-1
10
※
Notes :
-1
※
Notes:
10
1. TC = 25 o
C
C
1. TC = 25 oC
2. T = 150 o
2. T = 150 oC
J
J
3. Single Pulse
3. Single Pulse
-2
10
-2
0
1
2
3
10
10
10
10
10
100
10
10
10
1
2
3
VDS, Drain-Source Voltage [V]
V , Drain-Source Voltage [V]
DS
Figure 9-1. Maximum Safe Operating Area
for FQP8N60C
Figure 9-2. Maximum Safe Operating Area
for FQPF8N60C
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs Case Temperature
10 0
10 -1
10 -2
D = 0 .5
0 .2
0 .1
0 .0 5
※
N otes
:
1.
Z
(t)
= 0.85 ℃ /W M ax.
0 .0 2
0 .0 1
2. DθuJtCy Factor, D =t1/t2
3. TJM
-
TC
=
P DM * Zθ JC (t)
PDM
sin g le p u lse
1 0-4
t1
t2
1 00
10 -5
10 -3
1 0-2
1 0-1
10 1
t1, S qu a re W ave P u lse D u ra tio n [se c]
Figure 11-1. Transient Thermal Response Curve for FQP8N60C
D = 0 .5
10 0
0 .2
0 .1
※
N otes
:
0 .0 5
1 0 -1
1. Z
(t)
= 2.6 ℃ /W M ax.
2. DθuJtCy Factor, D =t1/t2
0 .0 2
0 .0 1
3. TJM
- TC = P D M * Zθ JC(t)
PDM
s in g le p u lse
t1
1 0 -2
t2
10 -5
1 0-4
1 0-3
10 -2
10 -1
10 0
10 1
t1, S quare W ave P ulse D uration [sec]
Figure 11-2. Transient Thermal Response Curve for FQPF8N60C
VGS
10V
Same Type
as DUT
50KΩ
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
10V
td(on)
tr
td(off)
tf
t on
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
L
1
2
----
--------------------
BVDSS - VDD
EAS
=
LIAS
VDS
ID
2
BVDSS
IAS
RG
VDD
ID (t)
VDD
VDS (t)
DUT
10V
t p
t p
Time
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
VGS
--------------------------
Gate Pulse Period
D =
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
TO-220
4.50 ±0.20
9.90 ±0.20
(8.70)
+0.10
–0.05
1.30
ø3.60 ±0.10
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10
+0.10
–0.05
0.50
2.40 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20]
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
TO-220F
2.54 ±0.20
10.16 ±0.20
ø3.18 ±0.10
(7.00)
(0.70)
(1.00x45°)
MAX1.47
0.80 ±0.10
#1
0.35 ±0.10
+0.10
–0.05
0.50
2.76 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20]
[2.54 ±0.20]
9.40 ±0.20
Dimensions in Millimeters
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