FQPF8N60CF [FAIRCHILD]
600V N-Channel MOSFET; 600V N沟道MOSFET
| 型号： | FQPF8N60CF |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 600V N-Channel MOSFET |
| 文件： | 总8页 (文件大小：751K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
February 2006
TM
FRFET
FQPF8N60CF
600V N-Channel MOSFET
Features
Description
•
•
•
•
•
•
6.26A, 600V, RDS(on) = 1.5Ω @VGS = 10 V
Low gate charge ( typical 28 nC)
Low Crss ( typical 12 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
G
TO-220F
FQPF Series
G D S
S
Absolute Maximum Ratings
Symbol
Parameter
FQPF8N60CFT
Units
V
VDSS
ID
Drain-Source Voltage
600
6.26*
3.96*
25*
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
A
A
(Note 1)
IDM
Drain Current
A
VGSS
EAS
IAR
Gate-Source Voltage
± 30
V
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
160
mJ
A
6.26
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
14.7
mJ
V/ns
W
4.5
48
- Derate above 25°C
0.38
W/°C
°C
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FQPF8N60CF
Units
°C/W
RθJC
RθJA
Thermal Resistance, Junction-to-Case
2.6
Thermal Resistance, Junction-to-Ambient
62.5
°C/W
©2006 Fairchild Semiconductor Corporation
FQPF8N60CF Rev. A
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQPF8N60CFT
FQPF8N60CFT
TO-220F
--
--
50
Electrical Characteristics
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min
Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
600
--
--
--
V
∆BVDSS
∆TJ
/
Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C
--
0.7
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
--
--
--
--
--
--
--
--
10
µA
µA
nA
nA
100
100
-100
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 3.13 A
VDS = 40 V, ID =3.13 A
2.0
--
--
4.0
1.5
--
V
Ω
S
Static Drain-Source On-Resistance
Forward Transconductance
1.25
8.7
(Note 4)
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
965
105
12
1255
135
16
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
VDD = 300 V, ID = 6.26A,
--
--
--
--
--
--
--
ns
ns
16.5
60.5
81
45
RG = 25 Ω
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
130
170
140
ns
(Note 4, 5)
ns
64.5
28
Qg
VDS = 480 V, ID = 6.26A,
GS = 10 V
nC
nC
nC
36
--
V
Qgs
Qgd
4.5
12
(Note 4, 5)
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
6.26
25
1.4
--
A
A
ISM
VSD
trr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, IS = 6.26 A
--
V
VGS = 0 V, IS = 6.26 A,
82
242
ns
nC
dIF / dt = 100 A/µs
(Note 4)
Qrr
Reverse Recovery Charge
--
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 7.3mH, I = 6.26A, V = 50V, R = 25 Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ 6.26A, di/dt ≤200A/µs, V ≤ BV Starting T = 25°C
DSS, J
SD
DD
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
2
www.fairchildsemi.com
FQPF8N60CF Rev. A
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
101
101
150oC
Bottom: 5.0 V
25oC
100
-55oC
100
※Notes :
1. VDS = 40V
2. 250µ s Pulse Test
※Notes :
1. 250µ s Pulse Test
-1
10
2. T = 25℃
C
-1
10
-1
1
10
2
4
6
8
10
10
100
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
3.5
3.0
101
VGS = 10V
2.5
2.0
100
1.5
VGS = 20V
※Notes :
1. VGS = 0V
2. 250µ s Pulse Test
1.0
150℃
25℃
※ Note : T = 25℃
J
-1
0.5
10
0
5
10
15
20
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
2000
12
Ciss = Cgs + Cgd (Cds = shorted)
C
Crss = C
oss = Cds + C
gd
1800
1600
1400
1200
1000
800
600
400
200
0
gd
10
VDS = 120V
VDS = 300V
VDS = 480V
C
iss
8
6
C
oss
4
2
※Notes ;
1. VGS = 0 V
2. f =1 MHz
C
rss
* Note : ID = 6.26A
0
0
5
10
15
20
25
30
-1
10
100
101
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3
www.fairchildsemi.com
FQPF8N60CF Rev. A
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.9
* Notes :
1. VGS = 0 V
2. ID = 250
* Notes :
1. VGS = 10 V
2. ID = 3.13 A
0.8
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T, Junction Temperature [oC]
TJ, Junction Temperature [oC]
J
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
8
6
4
2
0
102
Operation in This Area
is Limited by R DS(on)
10 µs
100 µs
101
1ms
10ms
100ms
100
DC
10-1
* Notes :
1. TC = 25 o
C
2. TJ = 150 o
C
3. Single Pulse
10-2
100
101
102
103
25
50
75
100
125
150
VDS, Drain-SourceVoltage[V]
TC, Case Temperature [oC]
Figure 11. Transient Thermal Response Curve
D=0.5
100
0.2
0.1
0.05
10-1
PDM
0.02
t1
0.01
t2
* Notes :
1. Z? (t) = 2.6 ? /W Max.
2. Duty Factor, D=t1/t2
JC
single pulse
10-2
3. TJM - TC = PDM * Z? (t)
JC
10-5
10-4
10-3
10-2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
4
www.fairchildsemi.com
FQPF8N60CF Rev. A
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
5
www.fairchildsemi.com
FQPF8N60CF Rev. A
Peak Diode Recovery dv/dt Test Circuit & Waveforms
6
www.fairchildsemi.com
FQPF8N60CF Rev. A
Mechanical Dimensions
TO-220F
2.54 ±0.20
10.16 ±0.20
ø3.18 ±0.10
(7.00)
(0.70)
(1.00x45°)
MAX1.47
0.80 ±0.10
#1
0.35 ±0.10
+0.10
–0.05
0.50
2.76 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20]
[2.54 ±0.20]
9.40 ±0.20
Dimensions in Millimeters
7
www.fairchildsemi.com
FQPF8N60CF Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
®
ACEx™
FAST
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
PowerEdge™
PowerSaver™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
®
PowerTrench
®
QFET
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
μSerDes™
ScalarPump™
SILENT SWITCHER
SMART START™
SPM™
®
HiSeC™
TinyLogic
2
EcoSPARK™
I C™
MSXPro™
OCX™
TINYOPTO™
TruTranslation™
UHC™
2
E CMOS™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
EnSigna™
FACT™
FACT Quiet Series™
OCXPro™
OPTOLOGIC
®
UniFET™
®
®
OPTOPLANAR™
PACMAN™
POP™
UltraFET
Across the board. Around the world.™
VCX™
Wire™
®
The Power Franchise
Programmable Active Droop™
Power247™
Stealth™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS,
SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I19
相关型号：
FQPF8N60CT_NL
Power Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3 PIN
FAIRCHILD
FQPF8N60CYDTU
Power Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3 PIN
FAIRCHILD
FQPF8N80CXDTU
Power Field-Effect Transistor, 8A I(D), 800V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3 PIN
FAIRCHILD
FQPF8N80CYDTU
N-Channel QFET® MOSFET 800V, 8A, 1.55Ω, TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, Y FORMED LEAD, 800/RAIL
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明