MBRF1045 [KEC]
SCHOTTKY BARRIER TYPE DIODE; 肖特基型二极管
| 型号： | MBRF1045 |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | SCHOTTKY BARRIER TYPE DIODE |
| 文件： | 总2页 (文件大小：439K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
MBRF1045
SCHOTTKY BARRIER TYPE DIODE
TECHNICAL DATA
SWITCHING TYPE POWER SUPPLY APPLICATION.
CONVERTER & CHOPPER APPLICATION.
A
C
DIM MILLIMETERS
S
FEATURES
_
10.0+0.3
A
_
15.0+0.3
B
C
E
Average Output Rectified Current
: IO=10A.
_
2.70 0.3
+
D
E
F
0.76+0.09/-0.05
_
3.2 0.2
+
Repetitive Peak Reverse Voltage
: VRRM=45V.
_
3.0+0.3
_
12.0 0.3
+
G
H
0.5+0.1/-0.05
_
13.6 0.5
+
J
K
L
L
Fast Reverse Recovery Time : trr=35ns.
R
_
3.7 0.2
+
L
N
P
1.2+0.25/-0.1
_
5.08+0.1
D
D
_
6.8 0.1
+
_
+
4.5 0.2
Q
R
S
_
2.6+0.2
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
0.5 Typ
N
2
H
SYMBOL
VRRM
RATING
45
UNIT
V
Repetitive Peak Reverse Voltage
1. CATHODE
2. NC
3
1
Average Output Rectified
Current
IO
10
A
A
3. ANODE
Peak One Cycle Surge Forward
Current (Non-Repetitive 60Hz)
IFSM
150
TO-220IS
Tj
Junction Temperature
-40 150
-55 150
Tstg
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Peak Forward Voltage
SYMBOL
VFM
TEST CONDITION
MIN.
TYP.
MAX.
0.7
UNIT
IFM=10A
-
-
-
-
-
-
-
-
V
IRRM
VRRM=Rated
Repetitive Peak Reverse Current
Reverse Recovery Time
Thermal Resistance
150
35
trr
ns
IF=1.0A, di/dt=-30A/ s
Juction to Case
Rth(j-c)
3.0
/W
2007. 10. 30
Revision No : 1
1/2
MBRF1045
I
- V
I
- V
R
F
F
R
100
30
100
10
Tj=25 C
10
3.0
1.0
0.3
0.1
Tj=25 C
1.0
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
10
20
30
40
50
FORWARD VOLTAGE VF (V)
REVERSE VOLTAGE VR (V)
I
F
- T
I - T
F A
C
16
16
RATED VOLTAGE APPLIED
RATED VOLTAGE
APPLIED
= 3.0 C/W
R
=16 C/W
JA
JA
14
12
10
8.0
6.0
4.0
2.0
0
14
12
10
8
R
=60 C/W
R
JC
(NO HEAT SINK)
DC
6
DC
4
DC
2
0
100
110
120
130
140
150
160
0
20
40
60
80 100 120 140 160
CASE TEMPERATURE Tc ( C)
AMBIENT TEMPERATURE TA ( C)
P
F(AV)
- I
F(AV)
8.0
6.0
4.0
2.0
DC
0
0
4.0
8.0
12
AVERAGE FORWARD CURRENT IF(AV) (A)
2007. 10. 30
Revision No : 1
2/2
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