KTC3631D [KEC]
TRIPLE DIFFUSED PNP TRANSISTOR(HIGH VOLTAGE); TRIPLE DIFFUSED PNP晶体管（高电压）
| 型号： | KTC3631D |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | TRIPLE DIFFUSED PNP TRANSISTOR(HIGH VOLTAGE) |
| 文件： | 总3页 (文件大小：406K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
KTC3631D/L
TRIPLE DIFFUSED NPN TRANSISTOR
TECHNICAL DATA
HIGH VOLTAGE SWITCHING.
A
C
I
FEATURES
J
Low Collector Saturation Voltage
: VCE(sat)=0.5V(Max.) at (IC=0.5A).
High Switching Speed Typically.
: tf 0.4 S at IC=1A.
DIM MILLIMETERS
_
6.60+0.2
_
6.10+0.2
_
5.0+0.2
_
1.10+0.2
_
2.70+0.2
_
2.30+0.1
A
B
C
D
E
F
H
I
1.00 MAX
_
2.30+0.2
Complementary to KTA1862D.
Wide Safe Operating Area (SOA)
_
0.5+0.1
_
2.00+0.20
_
0.50+0.10
_
0.91+ 0.10
_
0.90+0.1
_
1.00+0.10
J
H
K
L
M
O
P
P
F
L
F
1
2
3
Q
0.95 MAX
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
SYMBOL
VCBO
RATING
400
UNIT
V
DPAK
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
400
V
VEBO
A
C
I
7
V
J
DC
Collector Current
Pulse
2.0
IC
A
DIM MILLIMETERS
4.0
_
6.60 0.2
+
_
6.10 0.2
+
A
B
C
D
E
F
_
+
5.0 0.2
1.0
Ta=25
Tc=25
Collector Power
Dissipation
_
1.10
9.50
2.30
0.76
+
0.2
0.6
0.1
0.1
PC
P
W
H
G
_
+
_
+
_
+
10
G
H
I
1.0 MAX
_
2.30+0.2
Tj
Junction Temperature
150
_
0.5 0.1
+
_
2.0 0.2
+
J
F
F
L
K
L
P
Tstg
Storage Temperature Range
-55 150
_
+
0.50 0.1
_
1.0 0.1
+
1
2
3
Q
0.90 MAX
1. BASE
2. COLLECTOR
3. EMITTER
IPAK
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
SYMBOL
ICBO
TEST CONDITION
MIN.
TYP.
MAX. UNIT
VCB=400V, IE=0
-
-
-
-
1.0
1.0
180
-
A
A
IEBO
VEB=5.0V, IC=0
hFE(1) (Note)
hFE(2)
VCE(sat)
VBE(sat)
fT
VCE=5.0V, IC=100mA
VCE=5.0V, IC=500mA
IC=500mA, IB=100mA
IC=500mA, IB=100mA
VCE=10V, IE=-100mA, f=5MHz
VCB=10V, IE=0, f=1MHz
56
6
-
100
-
DC Current Gain
Collector Saturation Voltage
Base Saturation Voltage
Transition Frequency
0.3
-
0.5
1.2
-
V
-
V
MHz
pF
-
18
30
Cob
Collector Output Capacitance
-
-
OUTPUT
ton
tstg
tf
Turn-on Time
-
-
-
0.2
1.8
0.4
-
-
-
20µsec
I
B1
B2
INPUT
I
Switching
Time
B1
150Ω
Storage Time
Fall Time
S
I
I
B2
I
=-I =0.2A
B2
B1
DUTY CYCLE 1%
V
CC
=150V
<
=
Note : hFE(1) Classification O:56 120 , Y:82 180
2003. 3. 27
Revision No : 4
1/3
KTC3631D/L
I C - VCE
I
- VBE
C
1.0
1.0
0.8
Ta=25 C
=5.0V
0.5
0.3
V
CE
0.6
0.4
0.2
0
0.1
0.05
0.03
I
=2.0mA
4.0
B
0.01
0.005
0.003
0
1.0
2.0
3.0
5.0
0
0.2 0.4 0.6 0.8
1.0 1.2
1.4 1.6
(V)
BASE-EMITTER VOLTAGE V
COLLECTOR-EMITTER VOLTAGE V
(V)
BE
CE
hFE - IC
VCE(sat) , VBE(sat) - I C
10
3.0
1.0
0.3
1k
300
100
30
Ta=25 C
Ta=25 C
=5V
V
CE
V
I
/I =5
B
C
BE(sat)
10
3.0
1.0
0.1
0.03
0.01
0.002
0.01
0.03
0.1
0.3
1.0 2.0
0.002
0.01
0.03
0.1
0.3
1.0 2.0
COLLECTOR CURRENT I (A)
C
COLLECTOR CURRENT I (A)
C
SWITCHING CHARACTERISTIC
REVERSE BIAS SAFE OPERATING AREA
10
2.5
I
/I =5
B
C
L=10mH
V
=150V
CB
=-I
5.0
3.0
I
B1
B2
2.0
1.5
1.0
0.5
0
t
t
stg
f
1.0
0.5
0.3
0.1
0.1
0.3 0.5
1
3
5
0
100
200
300
400
CE
500
COLLECTOR CURRENT I (A)
C
COLLECTOR EMITTER VOLTAGE V
(V)
2003. 3. 27
Revision No : 4
2/3
KTC3631D/L
Pc - Ta
SAFE OPERATING AREA
12
10
8
10
3
1 Tc=25 C
2 Ta=25 C
I
I
MAX(PULSE)
*
C
C
1
MAX(DC)
1
0.3
6
4
0.1
2
2
SINGLE NONREPETITIVE
PULSE Tc=25 C
*
0
0.03
0.01
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
0
50
100
150
200
AMBIENT TEMPERATURE Ta ( C)
1
3
10
30
100
300
1K
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
2003. 3. 27
Revision No : 4
3/3
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