KTC3730F [KEC]

EPITAXIAL PLANAR NPN TRANSISTOR; 外延平面NPN晶体管
KTC3730F
型号: KTC3730F
厂家: KEC(KOREA ELECTRONICS)    KEC(KOREA ELECTRONICS)
描述:

EPITAXIAL PLANAR NPN TRANSISTOR
外延平面NPN晶体管

晶体 晶体管 光电二极管 放大器 局域网
文件: 总3页 (文件大小:50K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SEMICONDUCTOR  
KTC3730F  
EPITAXIAL PLANAR NPN TRANSISTOR  
TECHNICAL DATA  
VHF/UHF WIDE BAND AMPLIFIER APPLICATION.  
FEATURES  
E
B
· Low Noise Figure, High Gain.  
· Small rbb’Cc (Typ. 4pS).  
DIM MILLIMETERS  
_
2
1
A
B
C
D
E
G
J
0.6+0.05  
_
3
+
0.8 0.05  
0.38+0.02/-0.04  
_
MAXIMUM RATING (Ta=25)  
CHARACTERISTIC  
+
0.2 0.05  
_
+
1.0 0.05  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
UNIT  
V
_
+
0.35 0.05  
_
+
0.1 0.05  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
20  
_
0.15+0.05  
K
11  
V
3
50  
V
1. EMITTER  
2. BASE  
Collector Current  
mA  
mW  
PC  
Collector Power Dissipation  
Junction Temperature  
50  
3. COLLECTOR  
Tj  
150  
Tstg  
TFSM  
Storage Temperature Range  
-55150  
Marking  
Type Name  
h
Rank  
FE  
3
ELECTRICAL CHARACTERISTICS (Ta=25)  
CHARACTERISTIC  
Collector Cut-off Current  
SYMBOL  
ICBO  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
500  
0.5  
0.5  
180  
1.5  
12  
UNIT  
VCB=10V, IE=0  
-
-
-
-
nA  
μA  
V
IEBO  
VCE(sat)  
hFE (Note)  
Cob  
VEB=2V, IC=0  
Emitter Cut-off Current  
IC=10mA, IB=5mA  
Collector-Emitter Saturation Voltage  
DC Current Gain  
-
-
VCE=10V, IC=5mA  
56  
-
-
VCB=10V, IE=0, f=1MHz  
VCE=10V, IE=10mA, f=31.8MHz  
Collector Output Capacitance  
Collector-Base Time Constant  
Transition Frequency  
0.8  
4
pF  
pS  
rbb’Cc  
fT  
-
VCE=10V, IC=10mA, f=500MHz  
VCE=6V, IC=2mA,  
1.4  
3.2  
-
GHz  
Noise Figure  
NF  
-
3.5  
-
dB  
f=500MHz, Rg=50Ω  
Note) hFE Classification : F:56~120, G:82~180  
2005. 4. 7  
Revision No : 0  
1/3  
KTC3730F  
TYPICAL CHARACTERISTICS (Ta=25 C)  
Pc - Ta  
Cob , C re - VCB  
300  
5
3
f=1MHz  
Ta=25  
200  
100  
0
C
ob  
1
C
re  
0.5  
0.3  
0.1  
0
50  
100  
150  
0.1  
0.5  
0.1  
0.3 0.5  
1
3
5
10  
30 50  
(V)  
COLLECTOR-BASE VOLTAGE V  
AMBIENT TEMPERATURE Ta ( C)  
CB  
2
hFE - IC  
S2le  
- IC  
15  
500  
300  
V
CE  
=10V  
10  
5
100  
50  
30  
V
=10V  
CE  
f=500MHz  
0
10  
1
3
5
10  
30 50  
0.1  
0.3 0.5  
1
3
5
10  
30 50  
COLLECTOR CURRENT I (mA)  
C
COLLECTOR CURRENT I (mA)  
C
2
VCE(sat) - IC  
S2le  
- f  
500  
30  
25  
20  
15  
V
=10V  
CE  
=10mA  
C
I
300  
100  
50  
30  
I
/I =10  
B
C
10  
5
I
/I =2  
B
C
0
10  
0.1  
0.3  
0.5  
1
3
0.3 0.5  
1
3
5
10  
30 50  
FREQUENCY f (GHz)  
COLLECTOR CURRENT I (mA)  
C
2005. 4. 7  
Revision No : 0  
2/3  
KTC3730F  
rbb. Cc - IC  
fT - IE  
5
3
50  
30  
V
=10V  
CE  
f=31.8MHz  
1
10  
5
3
0.5  
0.3  
V
CE  
=10V  
0.1  
1
-0.1  
-0.3-0.5 -1  
-3 -5 -10  
-30 -50  
0.1  
0.3 0.5  
1
3
5
10  
30 50  
COLLECTOR CURRENT I (mA)  
C
EMITTERCURRENT I (mA)  
E
2
NF - IC  
S2le  
- VCE  
20  
10  
0
25  
20  
15  
10  
I =10mA  
C
V
=6V  
CE  
f=500MHz  
f=500MHz  
5
0
0.1  
0.3 0.5  
1
3
5
10  
30 50  
0
2
4
6
8
10  
COLLECTOR CURRENT I (mA)  
C
COLLECTOR EMITTER VOLTAGE V  
CE  
(V)  
NF - VCE  
25  
20  
15  
10  
I
=10mA  
C
f=500MHz  
5
0
0
2
4
6
8
10  
COLLECTOR EMITTER VOLTAGE V  
(V)  
CE  
2005. 4. 7  
Revision No : 0  
3/3  

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