KTC2022D [KEC]

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE); 外延平面NPN晶体管(通用)
KTC2022D
型号: KTC2022D
厂家: KEC(KOREA ELECTRONICS)    KEC(KOREA ELECTRONICS)
描述:

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE)
外延平面NPN晶体管(通用)

晶体 晶体管 局域网
文件: 总2页 (文件大小:397K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SEMICONDUCTOR  
KTC2022D/L  
EPITAXIAL PLANAR NPN TRANSISTOR  
TECHNICAL DATA  
GENERAL PURPOSE APPLICATION.  
FEATURES  
A
C
I
J
Low Collector-Emitter Saturation Voltage  
: VCE(sat)=-2.0V(Max.).  
DIM MILLIMETERS  
_
6.60+0.2  
_
6.10+0.2  
A
B
C
D
E
F
_
5.0+0.2  
_
1.10+0.2  
Complementary to KTA1042D/L.  
_
2.70+0.2  
_
2.30+0.1  
H
I
1.00 MAX  
_
2.30+0.2  
_
0.5+0.1  
_
2.00+0.20  
J
H
K
L
M
O
P
P
_
0.50+0.10  
_
0.91+ 0.10  
_
0.90+0.1  
_
1.00+0.10  
F
L
F
MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
)
1
2
3
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
UNIT  
V
Q
0.95 MAX  
100  
1. BASE  
2. COLLECTOR  
3. EMITTER  
100  
V
5
5
V
A
DPAK  
IB  
Base Current  
0.5  
A
PC  
20  
W
Collector Power Dissipation (Tc=25  
Junction Temperature  
)
A
C
I
Tj  
150  
J
Tstg  
Storage Temperature Range  
-55 150  
DIM MILLIMETERS  
_
6.60 0.2  
+
_
6.10 0.2  
+
A
B
C
D
E
F
_
+
5.0 0.2  
_
1.10  
9.50  
2.30  
0.76  
+
0.2  
0.6  
0.1  
0.1  
P
H
G
_
+
_
+
_
+
G
H
I
1.0 MAX  
_
2.30+0.2  
_
0.5 0.1  
+
_
2.0 0.2  
+
J
F
F
L
K
L
P
_
+
0.50 0.1  
_
+
0.1  
1.0  
0.90 MAX  
1
2
3
Q
1. BASE  
2. COLLECTOR  
3. EMITTER  
IPAK  
ELECTRICAL CHARACTERISTICS (Ta=25  
)
CHARACTERISTIC  
Collector Cut-off Current  
SYMBOL  
ICBO  
TEST CONDITION  
VCB=100V, IE=0  
MIN.  
TYP.  
MAX.  
UNIT  
-
-
-
-
100  
1.0  
-
A
mA  
V
IEBO  
VEB=5V, IC=0  
IC=50mA, IB=0  
Emitter Cut-off Current  
V(BR)CEO  
Collector-Emitter Breakdown Voltage  
100  
70  
20  
-
-
hFE(1) (Note) VCE=5V, IC=1A  
-
240  
-
DC Current Gain  
hFE(2)  
VCE(sat)  
VBE  
VCE=5V, IC=4A  
-
IC=4A, IB=0.4A  
Collector-Emitter Saturation Voltage  
Base-Emitter Voltage  
-
2.0  
1.5  
-
V
V
VCE=5V, IC=1A  
-
-
fT  
VCE=5V, IC=1A  
Transition Frequency  
-
30  
40  
MHz  
pF  
Cob  
VCB=10V, IE=0, f=1MHz  
Collector Output Capacitance  
-
-
Note : hFE(1) Classification  
0:70~140, Y:120~240.  
2003. 3. 27  
Revision No : 4  
1/2  
KTC2022D/L  
IC - VCE  
VCE(sat) - IC  
5.0  
4.0  
3.0  
2.0  
1.0  
2
1
COMMON EMITTER  
200  
150  
300  
I
/I =10  
B
C
100  
0.5  
0.3  
50  
Tc=25 C  
I
=20mA  
B
Tc=-25 C  
0.1  
COMMON EMITTER  
Tc=25 C  
0.05  
0.03  
0
0
0
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
0.01  
0.03  
0.1  
0.3  
1
3
10  
COLLECTOR-EMITTER VOLTAGE V  
CE  
(V)  
COLLECTOR CURRENT I (A)  
C
SAFE OPERATING AREA  
hFE - IC  
20  
10  
500  
300  
I
MAX.(PULSED)  
*
C
I
MAX.  
C
(CONTINUOUS)  
5
3
Tc=75 C  
100  
Tc=25 C  
Tc=-25 C  
50  
30  
1
0.5  
0.3  
COMMON EMITTER  
=5V  
SINGLE NONREPETITIVE  
PULSE Tc=25 C  
*
V
CE  
10  
CURVES MUST BE DERATED  
LINEARLY WITH INCREASE  
IN TEMPERATURE  
0.01  
0.03  
0.1  
0.3  
1
3
10  
COLLECTOR CURRENT I (A)  
C
0.1  
2
5
10  
30  
100  
300  
COLLECTOR-EMITTER VOLTAGE V  
CE  
(V)  
Pc - Ta  
24  
1 Tc=25 C  
2 Ta=25 C  
1
20  
16  
12  
8
4
2
0
0
25  
50  
75  
100  
125  
150  
MPERATURE Ta ( C)  
AMBIENT TE  
2003. 3. 27  
Revision No : 4  
2/2  

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