KTC2025D [KEC]
EPITAXIAL PLANAR NPN TRANSISTOR (LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING); 外延平面NPN晶体管（低频功率放大器，中速切换）
| 型号： | KTC2025D |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | EPITAXIAL PLANAR NPN TRANSISTOR (LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING) |
| 文件： | 总2页 (文件大小：402K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
KTC2025D/L
EPITAXIAL PLANAR NPN TRANSISTOR
TECHNICAL DATA
LOW FREQUENCY POWER AMP,
MEDIUM SPEED SWITCHING APPLICATIONS
A
C
I
J
FEATURES
DIM MILLIMETERS
_
6.60+0.2
_
6.10+0.2
_
5.0+0.2
_
1.10+0.2
_
2.70+0.2
_
2.30+0.1
A
B
C
D
E
F
High breakdown voltage VCEO 120V, high current 1A.
Low saturation voltage and good linearity of hFE
Complementary to KTA1045D/L
.
H
I
1.00 MAX
_
2.30+0.2
_
0.5+0.1
J
_
2.00+0.20
_
H
K
L
M
O
P
P
0.50+0.10
F
L
F
_
0.91+ 0.10
_
0.90+0.1
_
1.00+0.10
1
2
3
Q
0.95 MAX
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
1. BASE
2. COLLECTOR
3. EMITTER
SYMBOL RATING
UNIT
V
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
120
DPAK
120
V
5
V
A
C
I
1
J
Collector Current
A
ICP
2
1.0
DIM MILLIMETERS
_
6.60 0.2
+
_
6.10 0.2
+
A
B
C
D
E
F
Ta=25
Tc=25
Collector Power
Dissipation
PC
W
_
+
5.0 0.2
_
1.10
9.50
2.30
0.76
+
0.2
0.6
0.1
0.1
8
P
H
G
_
+
_
+
_
+
G
H
I
Tj
Junction Temperature
150
1.0 MAX
_
2.30+0.2
_
0.5 0.1
+
_
2.0 0.2
+
J
Tstg
Storage Temperature Range
-55 150
F
F
L
K
L
P
_
+
0.50 0.1
_
+
0.1
1.0
0.90 MAX
1
2
3
Q
1. BASE
2. COLLECTOR
3. EMITTER
IPAK
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Collector Cut of Current
SYMBOL
ICBO
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
VCB=50V, IE=0
-
-
-
1
A
A
V
V
V
IEBO
VEB=4V, IC=0
Emitter Cut of Current
-
1
V(BR)CBO
V(BR)CEO
V(BR)EBO
hFE(1) Note
hFE(2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
IC=10 A, IE=0
120
120
5
-
-
-
-
IC=1mA, IB=0
IE=10 A, IC=0
-
-
VCE=5V, IC=50mA
VCE=5V, IC=500mA
VCE=10V, IC=50mA
VCB=10V, IE=0, f=1MHz
IC=500mA, IB=50mA
IC=500mA, IB=50mA
100
20
-
-
320
-
DC Current Gain
-
fT
Gain Bandwidth Product
130
20
0.15
0.85
-
MHz
pF
V
Cob
Output Capacitance
-
-
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
-
0.4
1.2
-
V
I
B1
I
ton
toff
tstg
B2
Turn-on Time
-
100
500
700
-
-
-
1
1Ω
24Ω
100Ω
20u sec
Turn-off Time
Storage Time
-
-
Switching Time
nS
1uF
1uF
-2V
=12V
=10I =-10I =500mA
12V
V
CE
I
C
B1 B2
(Note) : hFE(1) Classification Y:100 200, GR:160 320
2003. 3. 27
Revision No : 3
1/2
KTC2025D/L
VCE(sat) - IC
IC - VCE
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.0
I
/I =10
B
C
Tc=25 C
0.5
0.3
20
15
10
12
8
0.1
6
0.05
0.03
4
2
I
B
=0mA
0.01
0
0
1
2
3
4
5
6
1
3
10
30
100
300
1k
3k
COLLECTOR-EMITTER VOLTAGE V
(V)
CE
COLLECTOR CURRENT I (mA)
C
VBE - I C
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
V
CE
=5V
Pc - Ta
10
8
1 Tc=25 C
2
Ta=25 C
1
0
0.2
0.4
0.6
0.8
1.0
1.2
6
BASE-EMITTER VOLTAGE V
(V)
BE
Cob - VCB
4
200
100
f=1MHz
2
2
0
50
30
0
20
40
60
80 100 120 140 160
AMBIENT TMMPERATURE Ta ( C)
10
5
0.05
1
3
10
30
100
COLLECTOR-BASE VOLTAGE V
(V)
CE
SAFE OPERATING AREA
hFE - IC
5
3
I
I
MAX.(PULSED)
*
500
C
C
V
=5V
CE
MAX. (CONTINUOUS)
300
1
0.5
0.3
100
0.1
50
30
0.05
0.03
SINGLE NONREPETITIVE
PULSE Tc=25 C
*
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
0.01
0.005
10
1
3
10
30
100
300
1k
5k
1
10
100
COLLECTOR CURRENT I (mA)
C
COLLECTOR-EMITTER VOLTAGE V (V)
CE
2003. 3. 27
Revision No : 3
2/2
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