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KF16N50F [KEC]

N CHANNEL MOS FIELD EFFECT TRANSISTOR; N沟道MOS场效应
KF16N50F
型号： KF16N50F
厂家： KEC(KOREA ELECTRONICS)    KEC(KOREA ELECTRONICS)
描述：

N CHANNEL MOS FIELD EFFECT TRANSISTOR
N沟道MOS场效应
文件： 总7页 (文件大小：80K)
中文：  中文翻译
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KF16N50P/F  
SEMICONDUCTOR  
N CHANNEL MOS FIELD  
EFFECT TRANSISTOR  
TECHNICAL DATA  
General Description  
KF16N50P  
A
This planar stripe MOSFET has better characteristics, such as fast  
switching time, low on resistance, low gate charge and excellent  
avalanche characteristics. It is mainly suitable for active power factor  
correction and switching mode power supplies.  
O
C
F
E
I
DIM MILLIMETERS  
G
Q
_
9.9 + 0.2  
A
B
C
D
E
F
B
15.95 MAX  
1.3+0.1/-0.05  
_
0.8 + 0.1  
FEATURES  
_
3.6 0.2  
+
VDSS=500V, ID=16A  
Drain-Source ON Resistance :  
K
_
2.8 + 0.1  
P
3.7  
0.5+0.1/-0.05  
1.5  
G
H
I
M
N
L
RDS(ON)(Max)=0.36  
Qg(typ.)= 40.8nC  
@VGS=10V  
J
D
_
13.08 + 0.3  
J
1.46  
H
K
L
M
N
O
P
N
_
1.4 0.1  
+
MAXIMUM RATING (Tc=25  
)
_
1.27 0.1  
+
_
2.54 0.2  
+
RATING  
_
4.5 0.2  
+
CHARACTERISTIC  
SYMBOL  
UNIT  
_
2.4 0.2  
+
_
9.2 +0.2  
1
2
3
1. GATE  
2. DRAIN  
3. SOURCE  
KF16N50P  
KF16N50F  
Q
VDSS  
VGSS  
Drain-Source Voltage  
Gate-Source Voltage  
@TC=25  
500  
30  
V
V
TO-220AB  
16  
9.7  
45  
16*  
9.7*  
45*  
ID  
Drain Current  
A
@TC=100  
KF16N50F  
IDP  
Pulsed (Note1)  
C
A
Single Pulsed Avalanche Energy  
(Note 2)  
EAS  
870  
22.5  
4.5  
mJ  
mJ  
Repetitive Avalanche Energy  
(Note 1)  
EAR  
DIM MILLIMETERS  
E
_
A
B
C
D
E
10.16 0.2  
+
Peak Diode Recovery dv/dt  
(Note 3)  
dv/dt  
V/ns  
_
15.87 0.2  
+
_
2.54 0.2  
+
_
0.8 0.1  
+
225  
51  
W
Tc=25  
Drain Power  
Dissipation  
PD  
_
+
3.18  
0.1  
1.78  
0.41  
_
3.3 0.1  
+
Derate above 25  
W/  
F
_
12.57 0.2  
+
G
H
J
L
Tj  
Maximum Junction Temperature  
Storage Temperature Range  
150  
M
_
0.5 0.1  
+
R
_
13.0 0.5  
+
Tstg  
-55 150  
_
K
L
3.23 0.1  
+
D
1.47 MAX  
1.47 MAX  
Thermal Characteristics  
M
N
O
Q
R
N
N
H
_
2.54 0.2  
+
RthJC  
RthJA  
Thermal Resistance, Junction-to-Case  
0.58  
62.5  
2.43  
62.5  
/W  
/W  
_
6.68 0.2  
+
Thermal Resistance,  
Junction-to-Ambient  
_
4.7  
+
_
0.2  
1. GATE  
2. DRAIN  
3. SOURCE  
2.76 0.2  
+
1
2
3
* : Drain current limited by maximum junction temperature.  
TO-220IS (1)  
PIN CONNECTION  
D
G
S
2008. 10. 2  
Revision No : 1  
1/7  
KF16N50P/F  
ELECTRICAL CHARACTERISTICS (Tc=25  
)
CHARACTERISTIC  
SYMBOL  
TEST CONDITION  
MIN.  
TYP.  
MAX. UNIT  
Static  
BVDSS  
Drain-Source Breakdown Voltage  
Breakdown Voltage Temperature Coefficient  
Drain Cut-off Current  
Gate Threshold Voltage  
Gate Leakage Current  
Drain-Source ON Resistance  
Dynamic  
500  
-
0.5  
-
-
-
V
ID=250 A, VGS=0V  
-
-
BVDSS  
/
Tj ID=250 A, Referenced to 25  
VDS=500V, VGS=0V  
V/  
IDSS  
10  
4
A
Vth  
2
-
-
V
VDS=VGS, ID=250 A  
IGSS  
-
nA  
VGS  
= 30V, VDS=0V  
100  
RDS(ON)  
VGS=10V, ID=8A  
-
0.3  
0.36  
Qg  
Qgs  
Qgd  
td(on)  
tr  
Total Gate Charge  
-
-
-
-
-
-
-
-
-
-
40.8  
9
-
-
-
-
-
-
-
-
-
-
VDS=400V, ID=16A  
VGS=10V  
Gate-Source Charge  
nC  
ns  
pF  
A
(Note4,5)  
(Note4,5)  
Gate-Drain Charge  
17  
Turn-on Delay time  
30  
VDD=250V  
ID=16A  
Turn-on Rise time  
21  
td(off)  
tf  
Turn-off Delay time  
162  
43  
RG=25  
Turn-off Fall time  
Ciss  
Coss  
Crss  
Input Capacitance  
1630  
244  
22  
VDS=25V, VGS=0V, f=1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Source-Drain Diode Ratings  
Continuous Source Current  
Pulsed Source Current  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
IS  
ISP  
VSD  
trr  
-
-
-
-
-
-
-
16  
64  
1.4  
-
VGS<Vth  
IS=16A, VGS=0V  
-
V
ns  
C
370  
4.8  
IS=16A, VGS=0V,  
dIs/dt=100A/ s  
Qrr  
-
Note 1) Repetivity rating : Pulse width limited by junction temperature.  
Note 2) L =6.1mH, IS=16A, VDD=50V, RG=25 , Starting Tj=25  
Note 3) IS 16A, dI/dt 200A/ , VDD BVDSS, Starting Tj=25  
.
.
Note 4) Pulse Test : Pulse width 300 , Duty Cycle  
Note 5) Essentially independent of operating temperature.  
2%.  
Marking  
1
1
KF16N50  
KF16N50  
2
801  
F
2
801  
P
1
2
PRODUCT NAME  
LOT NO  
2008. 10. 2  
Revision No : 1  
2/7  
KF16N50P/F  
Fig1. I - V  
D
Fig2. I - V  
D
GS  
DS  
102  
101  
100  
100  
10  
V
=20V  
DS  
V
=10V  
GS  
V
=6V  
GS  
GS  
100 C  
25 C  
V
=5V  
1
10-1  
0.1  
0.1  
10  
Drain - Source Voltage VDS (V)  
4
6
3
5
7
8
9
10  
1
100  
Gate - Source Voltage VGS (V)  
Fig3. BV  
- T  
Fig4. R - I  
DS(ON) D  
DSS  
j
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.5  
0.3  
0.1  
VGS = 0V  
IDS = 250  
V
=6V  
GS  
V
=10V  
GS  
100  
-100  
-50  
0
50  
150  
0
5
10  
15  
20  
25  
30  
Junction Temperature Tj (  
)
Drain Current ID (A)  
C
Fig6. R  
- T  
j
DS(ON)  
Fig5. I - V  
S
SD  
102  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
I
=10V  
GS  
= 8A  
DS  
101  
100  
100 C  
25 C  
10-1  
-100  
-50  
0
50  
100  
150  
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8  
(V)  
Junction Temperature T (  
j
)
C
Source - Drain Voltage VSD  
2008. 10. 2  
Revision No : 1  
3/7  
KF16N50P/F  
Fig 7. C - V  
DS  
Fig8. Q - V  
g
GS  
104  
103  
102  
101  
12  
10  
8
ID=16A  
V
= 400V  
DS  
V
= 250V  
DS  
C
C
iss  
V
= 100V  
DS  
6
oss  
4
2
C
rss  
40  
0
5
15  
20  
35  
40  
0
10  
25  
30  
(nC)  
0
10  
20  
30  
Gate - Charge  
Q
g
Drain - Source Voltage VDS (V)  
Fig10. Safe Operation Area  
Fig9. Safe Operation Area  
(KF16N50F)  
(KF16N50P)  
102  
101  
102  
101  
10µs  
100µs  
1ms  
100µs  
1ms  
10ms  
100ms  
Operation in this  
area is limited by RDS(ON)  
100  
10-1  
102  
100  
10-1  
102  
10ms  
Operation in this  
area is limited by RDS(ON)  
DC  
100ms  
DC  
T = 25  
T = 25  
C
c
C
T = 150  
j
C
c
C
T = 150  
j
Single pulse  
Single pulse  
102  
103  
102  
103  
100  
101  
100  
101  
Drain - Source Voltage V  
(V)  
Drain - Source Voltage V  
(V)  
DS  
DS  
Fig11. I - T  
D
j
18  
16  
14  
12  
10  
8
6
4
2
0
50  
75  
125  
)
150  
25  
100  
Junction Temperature T  
(
C
j
2008. 10. 2  
Revision No : 1  
4/7  
KF16N50P/F  
Fig12. Transient Thermal Response Curve  
(KF16N50P)  
100  
Duty=0.5  
0.2  
0.1  
10-1  
P
DM  
t
0.05  
0.02  
1
t
2
10-2  
- Rth(j-c) = 0.58 C/W Max.  
- Duty Factor, D= t1/t2  
Single Pulse  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
TIME (sec)  
Fig13. Transient Thermal Response Curve  
(KF16N50F)  
100  
Duty=0.5  
0.2  
0.1  
P
DM  
0.05  
0.02  
10-1  
t
1
t
2
- Rth(j-c) = 2.43 C/W Max.  
- Duty Factor, D= t1/t2  
Single Pulse  
10-2  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
TIME (sec)  
2008. 10. 2  
Revision No : 1  
5/7  
KF16N50P/F  
Fig14. Gate Charge  
V
GS  
10 V  
Fast  
Recovery  
Diode  
I
D
0.8 V  
DSS  
I
D
1.0 mA  
Q
V
Q
Q
DS  
gd  
gs  
Q
g
V
GS  
Fig15. Single Pulsed Avalanche Energy  
BV  
1
2
DSS  
2
E
AS  
=
LIAS  
BV  
- V  
DSS  
DD  
BVDSS  
L
I
AS  
50V  
25Ω  
ID(t)  
VDS  
V
GS  
VDD  
VDS(t)  
10 V  
Time  
t
p
Fig16. Resistive Load Switching  
VDS  
90%  
R
L
0.5 V  
DSS  
10%  
VGS  
td(off)  
25 Ω  
t
td(on)  
ton  
r
t
f
V
DS  
toff  
V
GS  
10V  
2008. 10. 2  
Revision No : 1  
6/7  
KF16N50P/F  
Fig17. Source - Drain Diode Reverse Recovery and dv /dt  
Body Diode Forword Current  
DUT  
V
DS  
I
SD  
(DUT)  
di/dt  
I
F
I
RM  
I
S
Body Diode Reverse Current  
Body Diode Recovery dv/dt  
0.8  
V
DSS  
V
DS  
(DUT)  
driver  
VSD  
V
DD  
V
GS  
10V  
Body Diode Forword Voltage drop  
2008. 10. 2  
Revision No : 1  
7/7  

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