KF16N50P [KEC]
N CHANNEL MOS FIELD EFFECT TRANSISTOR; N沟道MOS场效应![KF16N50P](http://pdffile.icpdf.com/pdf1/p00148/img/icpdf/KF16N_818640_icpdf.jpg)
型号: | KF16N50P |
厂家: | ![]() |
描述: | N CHANNEL MOS FIELD EFFECT TRANSISTOR |
文件: | 总7页 (文件大小:80K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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KF16N50P/F
SEMICONDUCTOR
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
TECHNICAL DATA
General Description
KF16N50P
A
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
O
C
F
E
I
DIM MILLIMETERS
G
Q
_
9.9 + 0.2
A
B
C
D
E
F
B
15.95 MAX
1.3+0.1/-0.05
_
0.8 + 0.1
FEATURES
_
3.6 0.2
+
VDSS=500V, ID=16A
Drain-Source ON Resistance :
K
_
2.8 + 0.1
P
3.7
0.5+0.1/-0.05
1.5
G
H
I
M
N
L
RDS(ON)(Max)=0.36
Qg(typ.)= 40.8nC
@VGS=10V
J
D
_
13.08 + 0.3
J
1.46
H
K
L
M
N
O
P
N
_
1.4 0.1
+
MAXIMUM RATING (Tc=25
)
_
1.27 0.1
+
_
2.54 0.2
+
RATING
_
4.5 0.2
+
CHARACTERISTIC
SYMBOL
UNIT
_
2.4 0.2
+
_
9.2 +0.2
1
2
3
1. GATE
2. DRAIN
3. SOURCE
KF16N50P
KF16N50F
Q
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
@TC=25
500
30
V
V
TO-220AB
16
9.7
45
16*
9.7*
45*
ID
Drain Current
A
@TC=100
KF16N50F
IDP
Pulsed (Note1)
C
A
Single Pulsed Avalanche Energy
(Note 2)
EAS
870
22.5
4.5
mJ
mJ
Repetitive Avalanche Energy
(Note 1)
EAR
DIM MILLIMETERS
E
_
A
B
C
D
E
10.16 0.2
+
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
V/ns
_
15.87 0.2
+
_
2.54 0.2
+
_
0.8 0.1
+
225
51
W
Tc=25
Drain Power
Dissipation
PD
_
+
3.18
0.1
1.78
0.41
_
3.3 0.1
+
Derate above 25
W/
F
_
12.57 0.2
+
G
H
J
L
Tj
Maximum Junction Temperature
Storage Temperature Range
150
M
_
0.5 0.1
+
R
_
13.0 0.5
+
Tstg
-55 150
_
K
L
3.23 0.1
+
D
1.47 MAX
1.47 MAX
Thermal Characteristics
M
N
O
Q
R
N
N
H
_
2.54 0.2
+
RthJC
RthJA
Thermal Resistance, Junction-to-Case
0.58
62.5
2.43
62.5
/W
/W
_
6.68 0.2
+
Thermal Resistance,
Junction-to-Ambient
_
4.7
+
_
0.2
1. GATE
2. DRAIN
3. SOURCE
2.76 0.2
+
1
2
3
* : Drain current limited by maximum junction temperature.
TO-220IS (1)
PIN CONNECTION
D
G
S
2008. 10. 2
Revision No : 1
1/7
KF16N50P/F
ELECTRICAL CHARACTERISTICS (Tc=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX. UNIT
Static
BVDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
500
-
0.5
-
-
-
V
ID=250 A, VGS=0V
-
-
BVDSS
/
Tj ID=250 A, Referenced to 25
VDS=500V, VGS=0V
V/
IDSS
10
4
A
Vth
2
-
-
V
VDS=VGS, ID=250 A
IGSS
-
nA
VGS
= 30V, VDS=0V
100
RDS(ON)
VGS=10V, ID=8A
-
0.3
0.36
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
-
-
-
-
-
-
-
-
-
-
40.8
9
-
-
-
-
-
-
-
-
-
-
VDS=400V, ID=16A
VGS=10V
Gate-Source Charge
nC
ns
pF
A
(Note4,5)
(Note4,5)
Gate-Drain Charge
17
Turn-on Delay time
30
VDD=250V
ID=16A
Turn-on Rise time
21
td(off)
tf
Turn-off Delay time
162
43
RG=25
Turn-off Fall time
Ciss
Coss
Crss
Input Capacitance
1630
244
22
VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS
ISP
VSD
trr
-
-
-
-
-
-
-
16
64
1.4
-
VGS<Vth
IS=16A, VGS=0V
-
V
ns
C
370
4.8
IS=16A, VGS=0V,
dIs/dt=100A/ s
Qrr
-
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =6.1mH, IS=16A, VDD=50V, RG=25 , Starting Tj=25
Note 3) IS 16A, dI/dt 200A/ , VDD BVDSS, Starting Tj=25
.
.
Note 4) Pulse Test : Pulse width 300 , Duty Cycle
Note 5) Essentially independent of operating temperature.
2%.
Marking
1
1
KF16N50
KF16N50
2
801
F
2
801
P
1
2
PRODUCT NAME
LOT NO
2008. 10. 2
Revision No : 1
2/7
KF16N50P/F
Fig1. I - V
D
Fig2. I - V
D
GS
DS
102
101
100
100
10
V
=20V
DS
V
=10V
GS
V
=6V
GS
GS
100 C
25 C
V
=5V
1
10-1
0.1
0.1
10
Drain - Source Voltage VDS (V)
4
6
3
5
7
8
9
10
1
100
Gate - Source Voltage VGS (V)
Fig3. BV
- T
Fig4. R - I
DS(ON) D
DSS
j
1.2
1.1
1.0
0.9
0.8
0.7
0.5
0.3
0.1
VGS = 0V
IDS = 250
V
=6V
GS
V
=10V
GS
100
-100
-50
0
50
150
0
5
10
15
20
25
30
Junction Temperature Tj (
)
Drain Current ID (A)
C
Fig6. R
- T
j
DS(ON)
Fig5. I - V
S
SD
102
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
I
=10V
GS
= 8A
DS
101
100
100 C
25 C
10-1
-100
-50
0
50
100
150
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
(V)
Junction Temperature T (
j
)
C
Source - Drain Voltage VSD
2008. 10. 2
Revision No : 1
3/7
KF16N50P/F
Fig 7. C - V
DS
Fig8. Q - V
g
GS
104
103
102
101
12
10
8
ID=16A
V
= 400V
DS
V
= 250V
DS
C
C
iss
V
= 100V
DS
6
oss
4
2
C
rss
40
0
5
15
20
35
40
0
10
25
30
(nC)
0
10
20
30
Gate - Charge
Q
g
Drain - Source Voltage VDS (V)
Fig10. Safe Operation Area
Fig9. Safe Operation Area
(KF16N50F)
(KF16N50P)
102
101
102
101
10µs
100µs
1ms
100µs
1ms
10ms
100ms
Operation in this
area is limited by RDS(ON)
100
10-1
102
100
10-1
102
10ms
Operation in this
area is limited by RDS(ON)
DC
100ms
DC
T = 25
T = 25
C
c
C
T = 150
j
C
c
C
T = 150
j
Single pulse
Single pulse
102
103
102
103
100
101
100
101
Drain - Source Voltage V
(V)
Drain - Source Voltage V
(V)
DS
DS
Fig11. I - T
D
j
18
16
14
12
10
8
6
4
2
0
50
75
125
)
150
25
100
Junction Temperature T
(
C
j
2008. 10. 2
Revision No : 1
4/7
KF16N50P/F
Fig12. Transient Thermal Response Curve
(KF16N50P)
100
Duty=0.5
0.2
0.1
10-1
P
DM
t
0.05
0.02
1
t
2
10-2
- Rth(j-c) = 0.58 C/W Max.
- Duty Factor, D= t1/t2
Single Pulse
10-5
10-4
10-3
10-2
10-1
100
101
TIME (sec)
Fig13. Transient Thermal Response Curve
(KF16N50F)
100
Duty=0.5
0.2
0.1
P
DM
0.05
0.02
10-1
t
1
t
2
- Rth(j-c) = 2.43 C/W Max.
- Duty Factor, D= t1/t2
Single Pulse
10-2
10-5
10-4
10-3
10-2
10-1
100
101
TIME (sec)
2008. 10. 2
Revision No : 1
5/7
KF16N50P/F
Fig14. Gate Charge
V
GS
10 V
Fast
Recovery
Diode
I
D
0.8 V
DSS
I
D
1.0 mA
Q
V
Q
Q
DS
gd
gs
Q
g
V
GS
Fig15. Single Pulsed Avalanche Energy
BV
1
2
DSS
2
E
AS
=
LIAS
BV
- V
DSS
DD
BVDSS
L
I
AS
50V
25Ω
ID(t)
VDS
V
GS
VDD
VDS(t)
10 V
Time
t
p
Fig16. Resistive Load Switching
VDS
90%
R
L
0.5 V
DSS
10%
VGS
td(off)
25 Ω
t
td(on)
ton
r
t
f
V
DS
toff
V
GS
10V
2008. 10. 2
Revision No : 1
6/7
KF16N50P/F
Fig17. Source - Drain Diode Reverse Recovery and dv /dt
Body Diode Forword Current
DUT
V
DS
I
SD
(DUT)
di/dt
I
F
I
RM
I
S
Body Diode Reverse Current
Body Diode Recovery dv/dt
0.8
V
DSS
V
DS
(DUT)
driver
VSD
V
DD
V
GS
10V
Body Diode Forword Voltage drop
2008. 10. 2
Revision No : 1
7/7
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