BAP55L_2015 [JMNIC]

Silicon PIN diode;
BAP55L_2015
型号: BAP55L_2015
厂家: QUANZHOU JINMEI ELECTRONIC CO.,LTD.    QUANZHOU JINMEI ELECTRONIC CO.,LTD.
描述:

Silicon PIN diode

文件: 总8页 (文件大小:63K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAP55L  
Silicon PIN diode  
Rev. 01 — 5 April 2005  
Preliminary data sheet  
1. Product profile  
1.1 General description  
Planar PIN diode in a SOD882 leadless ultra small plastic SMD package.  
1.2 Features  
High speed switching for RF signals  
Low diode capacitance  
Low forward resistance  
Very low series inductance  
For applications up to 3 GHz  
1.3 Applications  
RF attenuators and switches  
2. Pinning information  
Table 1:  
Discrete pinning  
Pin  
1
Description  
cathode  
Simplified outline  
Symbol  
[1]  
2
anode  
1
2
sym006  
Transparent  
top view  
[1] The marking bar indicates the cathode.  
3. Ordering information  
Table 2:  
Ordering information  
Type number Package  
Name  
Description  
Version  
BAP55L  
-
leadless ultra small plastic package; 2 terminals; body  
SOD882  
1.0 × 0.6 × 0.5 mm  
BAP55L  
Philips Semiconductors  
Silicon PIN diode  
4. Marking  
Table 3:  
Marking  
Type number  
BAP55L  
Marking code  
E6  
5. Limiting values  
Table 4:  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VR  
Parameter  
Conditions  
Min  
Max  
Unit  
V
reverse voltage  
-
50  
IF  
forward current  
-
100  
500  
+150  
+150  
mA  
mW  
°C  
Ptot  
Tstg  
Tj  
total power dissipation  
storage temperature  
junction temperature  
Ts = 90 °C  
-
65  
65  
°C  
6. Thermal characteristics  
Table 5:  
Symbol  
Rth(j-sp)  
Thermal characteristics  
Parameter  
Conditions  
Typ  
Unit  
thermal resistance from junction  
to soldering point  
100  
K/W  
7. Characteristics  
Table 6:  
Characteristics  
Tj = 25 °C unless otherwise specified.  
Symbol Parameter Conditions  
Min  
Typ  
Max Unit  
VF  
IR  
forward voltage  
IF = 50 mA  
VR = 20 V  
VR = 50 V  
-
-
-
0.95 1.1  
V
reverse current  
-
-
10  
nA  
µA  
0.1  
Cd  
diode capacitance  
f = 1 MHz; Figure 2  
VR = 0 V  
-
-
-
0.27  
0.23  
-
-
pF  
pF  
VR = 1 V  
VR = 20 V  
0.18 0.28 pF  
rD  
diode forward  
resistance  
f = 100 MHz; Figure 1  
IF = 0.5 mA  
IF = 1 mA  
-
-
-
-
3.4  
2.3  
0.8  
0.4  
4.5  
3.3  
1.2  
0.7  
IF = 10 mA  
IF = 100 mA  
9397 750 14811  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Preliminary data sheet  
Rev. 01 — 5 April 2005  
2 of 8  
BAP55L  
Philips Semiconductors  
Silicon PIN diode  
Table 6:  
Characteristics …continued  
Tj = 25 °C unless otherwise specified.  
Symbol Parameter  
Conditions  
Min  
Typ  
Max Unit  
2
|s12  
|
isolation  
VR = 0 V; Figure 4  
f = 900 MHz  
-
-
-
17.6  
13  
-
-
-
dB  
dB  
dB  
f = 1800 MHz  
f = 2450 MHz  
IF = 0.5 mA; Figure 3  
f = 900 MHz  
11.1  
2
|s21  
|
insertion loss  
-
-
-
0.25  
0.27  
0.29  
-
-
-
dB  
dB  
dB  
f = 1800 MHz  
f = 2450 MHz  
IF = 1 mA; Figure 3  
f = 900 MHz  
-
-
-
0.17  
0.19  
0.21  
-
-
-
dB  
dB  
dB  
f = 1800 MHz  
f = 2450 MHz  
IF = 10 mA; Figure 3  
f = 900 MHz  
-
-
-
0.07  
0.09  
0.12  
-
-
-
dB  
dB  
dB  
f = 1800 MHz  
f = 2450 MHz  
IF = 100 mA; Figure 3  
f = 900 MHz  
-
-
-
-
0.05  
0.07  
0.09  
0.28  
-
-
-
-
dB  
dB  
dB  
µs  
f = 1800 MHz  
f = 2450 MHz  
τL  
charge carrier life  
time  
when switched from  
IF = 10 mA to IR = 6 mA;  
RL = 100 ; measured at  
IR = 3 mA  
LS  
series inductance  
-
0.6  
-
nH  
9397 750 14811  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Preliminary data sheet  
Rev. 01 — 5 April 2005  
3 of 8  
BAP55L  
Philips Semiconductors  
Silicon PIN diode  
001aac628  
001aac629  
2
10  
400  
C
(fF)  
d
r
D
()  
300  
10  
200  
100  
0
1
1  
10  
1  
2
10  
1
10  
10  
0
5
10  
15  
20  
I
(mA)  
V (V)  
R
F
f = 100 MHz; Tj = 25 °C.  
f = 1 MHz; Tj = 25 °C.  
Fig 1. Forward resistance as a function of forward  
current; typical values  
Fig 2. Diode capacitance as a function of reverse  
voltage; typical values  
001aac630  
(1)  
(2)  
001aac631  
0
0
2
2
|S  
(dB)  
|
|S |  
12  
(dB)  
21  
(3)  
(4)  
0.25  
10  
0.50  
0.75  
1.00  
20  
30  
40  
0
1
2
3
0
1
2
3
f (MHz)  
f (MHz)  
(1) IF = 100 mA.  
(2) IF = 10 mA.  
(3) IF = 1 mA.  
(4) IF = 0.5 mA.  
Diode zero biased and inserted in series with a 50 Ω  
stripline circuit.  
Tamb = 25 °C.  
Diode inserted in series with a 50 stripline circuit  
and biased via the analyzer Tee network.  
Tamb = 25 °C.  
Fig 3. Insertion loss (|s21|2) of the diode as a function  
Fig 4. Isolation (|s12|2) of the diode as a function of  
of frequency; typical values  
frequency; typical values  
9397 750 14811  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Preliminary data sheet  
Rev. 01 — 5 April 2005  
4 of 8  
BAP55L  
Philips Semiconductors  
Silicon PIN diode  
8. Package outline  
Leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm  
SOD882  
L
L
1
2
b
e
1
A
A
1
E
D
(2)  
0
0.5  
1 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
(1)  
1
UNIT  
A
b
D
E
e
L
1
max.  
0.50  
0.46  
0.55 0.62 1.02  
0.47 0.55 0.95  
0.30  
0.22  
mm  
0.03  
0.65  
Notes  
1. Including plating thickness  
2. The marking bar indicates the cathode  
REFERENCES  
JEDEC  
OUTLINE  
VERSION  
EUROPEAN  
PROJECTION  
ISSUE DATE  
IEC  
JEITA  
03-04-16  
03-04-17  
SOD882  
Fig 5. Package outline SOD882  
9397 750 14811  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Preliminary data sheet  
Rev. 01 — 5 April 2005  
5 of 8  
BAP55L  
Philips Semiconductors  
Silicon PIN diode  
9. Revision history  
Table 7:  
Revision history  
Document ID  
Release date Data sheet status  
20050405 Preliminary data sheet  
Change notice Doc. number  
9397 750 14811  
Supersedes  
BAP55L_1  
-
-
9397 750 14811  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Preliminary data sheet  
Rev. 01 — 5 April 2005  
6 of 8  
BAP55L  
Philips Semiconductors  
Silicon PIN diode  
10. Data sheet status  
Level Data sheet status[1] Product status[2] [3]  
Definition  
I
Objective data  
Development  
This data sheet contains data from the objective specification for product development. Philips  
Semiconductors reserves the right to change the specification in any manner without notice.  
II  
Preliminary data  
Qualification  
This data sheet contains data from the preliminary specification. Supplementary data will be published  
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in  
order to improve the design and supply the best possible product.  
III  
Product data  
Production  
This data sheet contains data from the product specification. Philips Semiconductors reserves the  
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant  
changes will be communicated via a Customer Product/Process Change Notification (CPCN).  
[1]  
[2]  
Please consult the most recently issued data sheet before initiating or completing a design.  
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at  
URL http://www.semiconductors.philips.com.  
[3]  
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.  
11. Definitions  
12. Disclaimers  
Short-form specification The data in a short-form specification is  
extracted from a full data sheet with the same type number and title. For  
detailed information see the relevant data sheet or data handbook.  
Life support — These products are not designed for use in life support  
appliances, devices, or systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips Semiconductors  
customers using or selling these products for use in such applications do so  
at their own risk and agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
Limiting values definition Limiting values given are in accordance with  
the Absolute Maximum Rating System (IEC 60134). Stress above one or  
more of the limiting values may cause permanent damage to the device.  
These are stress ratings only and operation of the device at these or at any  
other conditions above those given in the Characteristics sections of the  
specification is not implied. Exposure to limiting values for extended periods  
may affect device reliability.  
Right to make changes — Philips Semiconductors reserves the right to  
make changes in the products - including circuits, standard cells, and/or  
software - described or contained herein in order to improve design and/or  
performance. When the product is in full production (status ‘Production’),  
relevant changes will be communicated via a Customer Product/Process  
Change Notification (CPCN). Philips Semiconductors assumes no  
responsibility or liability for the use of any of these products, conveys no  
license or title under any patent, copyright, or mask work right to these  
products, and makes no representations or warranties that these products are  
free from patent, copyright, or mask work right infringement, unless otherwise  
specified.  
Application information Applications that are described herein for any  
of these products are for illustrative purposes only. Philips Semiconductors  
make no representation or warranty that such applications will be suitable for  
the specified use without further testing or modification.  
13. Contact information  
For additional information, please visit: http://www.semiconductors.philips.com  
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com  
9397 750 14811  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Preliminary data sheet  
Rev. 01 — 5 April 2005  
7 of 8  
BAP55L  
Philips Semiconductors  
Silicon PIN diode  
14. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
General description. . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1  
Ordering information. . . . . . . . . . . . . . . . . . . . . 1  
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Thermal characteristics. . . . . . . . . . . . . . . . . . . 2  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 6  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . . 7  
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Contact information . . . . . . . . . . . . . . . . . . . . . 7  
3
4
5
6
7
8
9
10  
11  
12  
13  
© Koninklijke Philips Electronics N.V. 2005  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior  
written consent of the copyright owner. The information presented in this document does  
not form part of any quotation or contract, is believed to be accurate and reliable and may  
be changed without notice. No liability will be accepted by the publisher for any  
consequence of its use. Publication thereof does not convey nor imply any license under  
patent- or other industrial or intellectual property rights.  
Date of release: 5 April 2005  
Document number: 9397 750 14811  
Published in The Netherlands  

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