2SC5386_2015 [JMNIC]
Silicon NPN Power Transistors;
| 型号： | 2SC5386_2015 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总4页 (文件大小：203K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon NPN Power Transistors
2SC5386
DESCRIPTION
·With TO-3P(H)IS package
·High voltage;high speed
·Low collector saturation voltage
APPLICATIONS
·Horizontal deflection output for high
resolution display,color TV
·High speed switching applications
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
3
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
UNIT
V
1500
Open base
600
V
Open collector
5
V
8
16
A
ICM
Collector current-Peak
Base current
A
IB
4
A
PC
Total power dissipation
Junction temperature
Storage temperature
TC=25℃
50
W
℃
℃
Tj
150
-55~150
Tstg
JMnic
Product Specification
Silicon NPN Power Transistors
2SC5386
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=10mA ;IB=0
600
IC=6A; IB=1.5A
3.0
1.5
1.0
10
V
IC=6A; IB=1.5A
V
VCB=1500V; IE=0
VEB=5V; IC=0
mA
μA
IEBO
hFE-1
DC current gain
IC=1A ; VCE=5V
IC=6A ; VCE=5V
IE=0 ; VCB=10V,f=1MHz
IE=0.1A ; VCE=10V
15
35
hFE-2
DC current gain
4.3
7.5
Cob
Collector output capacitance
Transition frequency
105
1.7
pF
fT
MHz
Switching times
ts
tf
Storage time
2.5
3.5
0.3
μs
μs
ICP=5A;IB1( )=1.0A
fH =64kHz
end
Fall time
0.15
2
JMnic
Product Specification
Silicon NPN Power Transistors
2SC5386
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3
JMnic
Product Specification
Silicon NPN Power Transistors
2SC5386
4
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