2SC5392 [PANASONIC]
Silicon NPN triple diffusion planar type; 硅NPN三重扩散平面型
| 型号： | 2SC5392 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN triple diffusion planar type |
| 文件： | 总3页 (文件大小：158K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SC5392
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.6±0.2
Features
High-speed switching
0.3
■
2.9±0.2
●
●
High collector to base voltage VCBO
φ3.
●
Wide area of safe operation (ASO)
●
Satisfactory linearity of foward current transfer ratio hFE
●
Dielectric breakdown voltage of the package: > 5kV
0.2
2.6±0.1
1.6±0
Absolute Maximum Ratings (T =25˚C)
■
C
0.8.1
0.55±0.15
Parameter
Symbol
VCBO
VCES
VCEO
VE
ICP
Ratings
U
V
2.54±0.3
3
5.08±0.5
Collector to base voltage
800
1
800
V
Collector to emitter voltage
V
1:Base
2:Collector
3:Emitter
Emitter to base voltage
Peak collector current
Collector current
8
V
3.0
A
TO–220D Full Pack Package
IC
1.5
0.5
A
Base current
IB
A
Collector power TC=25°C
2
PC
W
dissipation
a=25C
2.
Junctioemperture
Storage mpratur
Tj
150
˚C
˚C
Tstg
–55 to +50
Electricl Characterstics (T =5˚C)
■
C
Para
Symbol
ICBO
Conditions
min
typ
max
100
100
Unit
µA
µA
V
Collector cutof
Emitter cutoff curre
VCB = 800V, IE = 0
VEB = 5V, IC = 0
C = 10mA, IB = 0
IEBO
VCE
hFE1
hFE2
Collector to emitter volte
I
500
15
8
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 0.6A
Forward current transfer ratio
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
I
C = 0.6A, IB = 0.17A
1.0
1.5
V
V
IC = 0.6A, IB = 0.17A
Transition frequency
Turn-on time
Storage time
Fall time
fT
ton
tstg
tf
VCE = 10V, IC = 0.1A, f = 1MHz
20
MHz
µs
1.0
3.0
0.3
IC = 0.6A, IB1 = 0.17A, IB2 = – 0.34A,
VCC = 200V
µs
µs
1
Power Transistors
2SC5392
IC — VCE
VCE(sat) — IC
VBE(sat) — IC
1.0
100
10
100
10
Ta=25˚C
Ta=25˚C
TC=25˚C
0.8
IB=70mA
60mA
50mA
40mA
0.6
0.4
0.2
0
30mA
1
1
20mA
10mA
0.1
0.01
1
0.01
0
2
4
6
8
10
0.01
0.1
1
0.01
1
10
(
V
)
(
A
)
( )
CollectIC A
Collector to emitter voltage VCE
Collector current IC
hFE — IC
1000
Ta=25˚C
100
10
1
0.1
0.01
0.1
10
(
)
olltor cIC mA
2
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semiconductors described in this book
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Consult our sales staff in advance for information on the following applications:
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defect which may arise later in your equipment.
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Electric Industrial Co., Ltd.
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