2SC4512_2015 [JMNIC]
Silicon NPN Power Transistors;
| 型号： | 2SC4512_2015 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总4页 (文件大小：193K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4512
DESCRIPTION
·With TO-220C package
·Complement to type 2SA1726
APPLICATIONS
·Audio and General Purpose
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
UNIT
V
120
Open base
80
V
Open collector
6
V
6
3
A
IB
Base current
A
PC
Collector dissipation
Junction temperature
Storage temperature
TC=25℃
50
W
℃
℃
Tj
150
Tstg
-55~150
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4512
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCE(sat)
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
IC=25mA; RBE=∞
MIN
TYP.
MAX
UNIT
V
80
IC=5A; IB=0.2A
VCB=120V ;IE=0
VEB=6V; IC=0
0.5
10
10
V
μA
μA
IEBO
hFE
DC current gain
IC=2A ; VCE=4V
f=1MHz; VCB=10V
IE=-0.5A ; VCE=12V
50
COB
Collertor output capacitance
Transition frequency
110
20
pF
fT
MHz
Switching times
ton
tstg
tf
Turn-on time
0.16
2.60
0.34
μs
μs
μs
VCC=30V; IC=3A
IB1=-IB2=0.3A
RL=10Ω
Storage time
Fall time
hFE Classifications
O
P
Y
50-100
70-140
90-180
2
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4512
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4512
4
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