2SC4517 [SANKEN]
Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose); 硅NPN三重扩散平面型晶体管（开关稳压器和通用）
| 型号： | 2SC4517 |
| 厂家： | 
SANKEN ELECTRIC |
| 描述： | Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose) |
| 文件： | 总1页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2 S C4 5 1 7 /4 5 1 7 A
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)
Application : Switching Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C)
■Electrical Characteristics
(Ta=25°C)
External Dimensions FM20(TO220F)
Symbol 2SC4517 2SC4517A
Symbol
2SC4517 2SC4517A
Unit
Conditions
Unit
±0.2
4.2
±0.2
10.1
c
0.5
2.8
900
1000
100max
100max
550min
10 to 30
0.5max
1.2max
6typ
µA
µA
V
V
V
VCBO
VCEO
VEBO
IC
ICBO
VCB=800V
VEB=7V
550
7
IEBO
V
V(BR)CEO
hFE
IC=10mA
±0.2
ø3.3
a
b
3(Pulse6)
1.5
A
VCE=4V, IC=1A
IC=1A, IB=0.2A
IC=1A, IB=0.2A
VCE=12V, IE=–0.25A
VCB=10V, f=1MHz
IB
VCE(sat)
VBE(sat)
fT
V
V
A
30(Tc=25°C)
150
PC
W
°C
°C
±0.15
1.35
Tj
MHz
pF
±0.15
1.35
35typ
Tstg
–55 to +150
COB
+0.2
-0.1
0.85
2.54
+0.2
-0.1
0.45
±0.2
2.4
2.54
■Typical Switching Characteristics (Common Emitter)
±0.2
2.2
VCC
(V)
RL
IC
VBB1
VBB2
(V)
IB1
IB2
tstg
tf
ton
Weight : Approx 2.0g
a. Type No.
b. Lot No.
(Ω)
(A)
(V)
(A)
(A)
(µs)
(µs)
(µs)
B
C E
250
250
1
10
–5
0.15
–0.45
4max
0.5max
0.7max
–
–
–
IC VCE Characteristics (Typical)
VCE(sat),VBE(sat) IC Temperature Characteristics (Typical)
IC VBE Temperature Characteristics (Typical)
(VCE=4V)
3
3
2
1
0
1.5
IC/IB=5 Const.
2
1
1.0
VBE(sat)
0.5
VCE(sat)
0
0
0
1
2
3
4
0.03 0.05
0.1
0.5
1
5
0
0.2
0.4
0.6
0.8
1.0
Collector-Emitter Voltage VCE(V)
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
–
–
–
hFE IC Temperature Characteristics (Typical)
ton•tstg•tf IC Characteristics (Typical)
θ
j-a t Characteristics
(VCE=4V)
4
1
7
5
50
125˚C
25˚C
tstg
VCC 250V
IC:IB1:IB2=1:0.15:–0.45
1
–55˚C
tf
0.5
10
ton
0.5
0.3
0.1
0.2
5
1
10
100
1000
0.5
1
3
0.02
0.05
0.1
0.5
1
3
Collector Current IC(A)
Time t(ms)
Collector Current IC(A)
Safe Operating Area (Single Pulse)
Reverse Bias Safe Operating Area
–
Pc Ta Derating
10
5
10
5
30
20
10
1
1
0.5
0.5
Without Heatsink
Natural Cooling
L=3mH
IB2=–1.0A
Duty:less than 1%
0.1
0.1
Without Heatsink
Natural Cooling
0.05
0.05
Without Heatsink
2SC4517A
1000
2SC4517
2
0
0.01
2
0.01
5
10
50 100
500 1000
50
100
500
0
25
50
75
100
125
150
Collector-Emitter Voltage VCE(V)
Collector-Emitter Voltage VCE(V)
Ambient Temperature Ta(˚C)
112
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