2SC4350_15 [JMNIC]
Silicon NPN Power Transistors;
| 型号： | 2SC4350_15 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：158K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4350
DESCRIPTION
·With TO-220 package
·High DC current gain
·DARLINGTON
APPLICATIONS
·For high speed power switching
applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-220) and symbol
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
100
100
7
UNIT
V
Open emitter
Open base
V
Open collector
V
10
A
IB
Base current
0.5
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
40
W
℃
℃
Tj
150
-55~150
Tstg
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4350
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)CBO
V(BR)EBO
VCEsat
PARAMETER
CONDITIONS
MIN
100
100
7
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IC=0.1A ; IB=0
Collector-base breakdown voltage
Emitter-base breakdown voltage
IC=1mA; IE=0;
IE=5mA; IC=0;
V
V
Collector-emitter saturation voltage IC=5A; IB=5mA
1.5
2.0
V
VBEsat
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=5A; IB=5mA
VCB=100V ;IE=0
VEB=7V; IC=0
V
ICBO
1
μA
mA
IEBO
5.0
hFE
IC=5A ; VCE=2V
2000
20000
hFE classifications
M
L
K
2000-5000 4000-10000 8000-20000
2
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4350
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
相关型号：
2SC4351-AZ
Power Bipolar Transistor, 5A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3
NEC
2SC4351-K-AZ
Power Bipolar Transistor, 5A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3
NEC
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