2SC4351-K-AZ [NEC]
Power Bipolar Transistor, 5A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3;
| 型号： | 2SC4351-K-AZ |
| 厂家： | 
NEC |
| 描述： | Power Bipolar Transistor, 5A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3 晶体 晶体管 功率双极晶体管 开关 局域网 |
| 文件： | 总6页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
DARLINGTON POWER TRANSISTOR
2SC4351
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR HIGH-SPEED SWITCHING
PACKAGE DRAWING (UNIT: mm)
The 2SC4351 is a high-speed Darlington power transistor. This
transistor is ideal for high-precision control such as PWM control for
pulse motors or blushless motor of OA and FA equipment.
FEATURES
• Mold package that does not require an insulating board or
insulation bushing
• On-chip C to B constant voltage diode for surge voltage
absorption
• On-chip C to E reverse diode
• Fast switching speed
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
VCBO
Ratings
60 10
60 10
8.0
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
VCEO
V
VEBO
V
5.0
IC(DC)
A
Electrode Connection
1. Base
10
IC(pulse)*
IB(DC)
A
0.5
A
2. Collector
3. Emitter
PT (Tc = 25°C)
PT (Ta = 25°C)
Tj
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
20
W
W
°C
°C
2.0
150
−55 to +150
Tstg
* PW ≤ 10 ms, duty cycle ≤ 50%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15594EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
2002
©
2SC4351
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Collector cutoff current
DC current gain
Symbol
ICBO
Conditions
VCB = 40 V, IE = 0
MIN.
TYP.
MAX.
0.5
Unit
µA
hFE1*
hFE2*
VCE(sat)*
VBE(sat)*
ton
VCE = 2.0 V, IC = 2.0 A
VCE = 2.0 V, IC = 4.0 A
IC = 2.0 A, IB = 2.0 mA
IC = 2.0 A, IB = 2.0 mA
2,000
500
20,000
DC current gain
Collector saturation voltage
Base saturation voltage
Turn-on time
1.5
2.0
V
V
IC = 2.0 A, IB1 = −IB2 = 2.0 mA,
RL = 25 Ω, VCC ≅ 50 V
Refer to the test circuit.
µs
µs
µs
0.7
2.5
0.6
Storage time
tstg
Fall time
tf
* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
hFE1
M
L
K
2,000 to 5,000
4,000 to 10,000
8,000 to 20,000
2
Data Sheet D15594EJ2V0DS
2SC4351
TYPICAL CHARACTERISTICS (Ta = 25°C)
Case Temperature TC ( C)
Case Temperature TC ( C)
°
°
Collector to Emitter Voltage VCE (V)
Pulse Width PW (ms)
Collector to Emitter Voltage VCE (V)
Base to Emitter Voltage VBE (V)
3
Data Sheet D15594EJ2V0DS
2SC4351
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µ
µ
µ
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SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
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4
Data Sheet D15594EJ2V0DS
2SC4351
[MEMO]
5
Data Sheet D15594EJ2V0DS
2SC4351
•
The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
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and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
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•
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M8E 00. 4
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